Ion species measurement of high current metal ion beams extracted from a multicusp ion source

1992 ◽  
Vol 63 (4) ◽  
pp. 2481-2483 ◽  
Author(s):  
Yasuhiro Matsuda ◽  
Hiroshi Inami ◽  
Takatoshi Yamashita ◽  
Shuichi Fujiwara ◽  
Yutaka Inouchi ◽  
...  
1990 ◽  
Vol 61 (1) ◽  
pp. 538-540 ◽  
Author(s):  
Yutaka Inouchi ◽  
Hideki Tanaka ◽  
Hiroshi Inami ◽  
Fumio Fukumaru ◽  
Kouzi Matsunaga

1997 ◽  
Vol 46 (2) ◽  
pp. 588-591 ◽  
Author(s):  
D. Ratschko ◽  
B.G. Zhou ◽  
D. Knolle ◽  
M. Glaser
Keyword(s):  

1992 ◽  
Vol 63 (4) ◽  
pp. 2422-2424 ◽  
Author(s):  
S. P. Bugaev ◽  
A. G. Nikolaev ◽  
E. M. Oks ◽  
P. M. Schanin ◽  
G. Yu. Yushkov

2010 ◽  
Vol 111 (1) ◽  
pp. 1-4 ◽  
Author(s):  
M. Tajmar ◽  
I. Vasiljevich ◽  
W. Grienauer

1985 ◽  
Vol 45 ◽  
Author(s):  
David R Kingham ◽  
Vincent J Mifsud

ABSTRACTA theoretical model of liquid metal ion source (LMIS) operation has been developed by Kingham and Swanson. In this paper we consider beams from LMIS on the basis of this model. In particular we consider properties such as angular intensity, energy spread and relative abundance of differently charged species of the ion beam, and the dependence of these properties on source current and elemental composition. The conclusion is that the brightest focussed beam for a given probe size is attainable at the lowest possible source current as previously stated by Swanson. LMIS sources have an onset current of typically 1-2[A and will not operate stably below this current, thus limiting the maximum focussed ion beam brightness. The physical reason for this is discussed. The relevance of these properties to fine focussed ion beam applications, particularly semiconductor processing, is discussed. Useful, and in some cases unique, device manufacturing techniques can be postulated using one or more of the momentum, energy or atomic addition properties inherant tothis type of system. Advanced research tools are discussed, together with some examples of the use of microfocussed ion beams with probe sizes down to less than 50nm. Immediate applications include: high resolution ion imaging and SIMS microanalysis; ion beam machining and microfabrication; ion beam resist exposure and ion beam mask repair.


1994 ◽  
Vol 65 (4) ◽  
pp. 1269-1271
Author(s):  
Takatoshi Yamashita ◽  
Yutaka Inouchi ◽  
Shuichi Fujiwara ◽  
Yasuhiro Matsuda ◽  
Hiroshi Inami ◽  
...  
Keyword(s):  
Ion Beam ◽  

2008 ◽  
Vol 79 (2) ◽  
pp. 02B315 ◽  
Author(s):  
W. J. Zhao ◽  
M. W. O. Müller ◽  
J. Janik ◽  
K. X. Liu ◽  
X. T. Ren

1998 ◽  
Vol 287-288 ◽  
pp. 331-332
Author(s):  
Th. Witke ◽  
P. Siemroth
Keyword(s):  

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