Extraction of high current Cr ion beam from a multicusp metal ion source

1994 ◽  
Vol 65 (4) ◽  
pp. 1269-1271
Author(s):  
Takatoshi Yamashita ◽  
Yutaka Inouchi ◽  
Shuichi Fujiwara ◽  
Yasuhiro Matsuda ◽  
Hiroshi Inami ◽  
...  
Keyword(s):  
Ion Beam ◽  
1989 ◽  
Vol 147 ◽  
Author(s):  
I. G. Brown ◽  
M. D. Rubin ◽  
K. M. Yu ◽  
R. Mutikainen ◽  
N. W. Cheung

AbstractWe have used high-dose metal ion implantation to ‘fine tune’ the composition of Y-Ba- Cu-O thin films. The films were prepared by either of two rf sputtering systems. One system uses three modified Varian S-guns capable of sputtering various metal powder targets; the other uses reactive rf magnetron sputtering from a single mixed-oxide stoichiometric solid target. Film thickness was typically in the range 2000–5000 A. Substrates of magnesium oxide, zirconia-buffered silicon, and strontium titanate have been used. Ion implantation was carried out using a metal vapor vacuum arc (MEVVA) high current metal ion source. Beam energy was 100–200 keV, average beam current about 1 mA, and dose up to about 1017 ions/cm2. Samples were annealed at 800 – 900°C in wet oxygen. Film composition was determined using Rutherford Backscattering Spectrometry (RBS), and the resistivity versus temperature curves were obtained using a four-point probe method. We find that the zero-resistance temperature can be greatly increased after implantation and reannealing, and that the ion beam modification technique described here provides a powerful means for optimizing the thin film superconducting properties.


1990 ◽  
Vol 61 (1) ◽  
pp. 538-540 ◽  
Author(s):  
Yutaka Inouchi ◽  
Hideki Tanaka ◽  
Hiroshi Inami ◽  
Fumio Fukumaru ◽  
Kouzi Matsunaga

1992 ◽  
Vol 63 (4) ◽  
pp. 2422-2424 ◽  
Author(s):  
S. P. Bugaev ◽  
A. G. Nikolaev ◽  
E. M. Oks ◽  
P. M. Schanin ◽  
G. Yu. Yushkov

2010 ◽  
Vol 111 (1) ◽  
pp. 1-4 ◽  
Author(s):  
M. Tajmar ◽  
I. Vasiljevich ◽  
W. Grienauer

1992 ◽  
Vol 295 ◽  
Author(s):  
Mikio Takai ◽  
Ryou Mimura ◽  
Hiroshi Sawaragi ◽  
Ryuso Aihara

AbstractA nondestructive three-dimensional RBS/channeling analysis system with an atomic resolution has been designed and is being constructed in Osaka University for analysis of nanostructured surfaces and interfaces. An ultra high-vacuum sample-chamber with a threeaxis goniometer and a toroidal electrostatic analyzer for medium energy ion scattering (MEIS) was combined with a short acceleration column for a focused ion beam. A liquid metal ion source (LMIS) for light metal ions such as Li+ or Be+ was mounted on the short column.A minimum beam spot-size of about 10 nm with a current of 10 pA is estimated by optical property calculation for 200 keV Li+ LMIS. An energy resolution of 4 × 10-3 (AE/E) for the toroidal analyzer gives rise to atomic resolution in RBS spectra for Si and GaAs. This system seems feasible for atomic level analysis of localized crystalline/disorder structures and surfaces.


1985 ◽  
Vol 45 ◽  
Author(s):  
David R Kingham ◽  
Vincent J Mifsud

ABSTRACTA theoretical model of liquid metal ion source (LMIS) operation has been developed by Kingham and Swanson. In this paper we consider beams from LMIS on the basis of this model. In particular we consider properties such as angular intensity, energy spread and relative abundance of differently charged species of the ion beam, and the dependence of these properties on source current and elemental composition. The conclusion is that the brightest focussed beam for a given probe size is attainable at the lowest possible source current as previously stated by Swanson. LMIS sources have an onset current of typically 1-2[A and will not operate stably below this current, thus limiting the maximum focussed ion beam brightness. The physical reason for this is discussed. The relevance of these properties to fine focussed ion beam applications, particularly semiconductor processing, is discussed. Useful, and in some cases unique, device manufacturing techniques can be postulated using one or more of the momentum, energy or atomic addition properties inherant tothis type of system. Advanced research tools are discussed, together with some examples of the use of microfocussed ion beams with probe sizes down to less than 50nm. Immediate applications include: high resolution ion imaging and SIMS microanalysis; ion beam machining and microfabrication; ion beam resist exposure and ion beam mask repair.


1999 ◽  
Vol 27 (4) ◽  
pp. 1068-1072 ◽  
Author(s):  
A.A. Goncharov ◽  
S.M. Gubarev ◽  
A.N. Dobrovoiskii ◽  
I.M. Protsenko ◽  
I.V. Litovko ◽  
...  

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