High‐current metal ion beam extraction from a multicusp ion source

1990 ◽  
Vol 61 (1) ◽  
pp. 538-540 ◽  
Author(s):  
Yutaka Inouchi ◽  
Hideki Tanaka ◽  
Hiroshi Inami ◽  
Fumio Fukumaru ◽  
Kouzi Matsunaga
Keyword(s):  
Metal Ion ◽  
Ion Beam ◽  
Ion Source ◽  
Beam Extraction ◽  
High Current ◽  
Multicusp Ion Source

Ion species measurement of high current metal ion beams extracted from a multicusp ion source

1992 ◽  
Vol 63 (4) ◽  
pp. 2481-2483 ◽  
Author(s):  
Yasuhiro Matsuda ◽  
Hiroshi Inami ◽  
Takatoshi Yamashita ◽  
Shuichi Fujiwara ◽  
Yutaka Inouchi ◽  
...  
Keyword(s):  
Metal Ion ◽  
Ion Beams ◽  
Ion Source ◽  
High Current ◽  
Multicusp Ion Source ◽  
Ion Species

Extraction of high current Cr ion beam from a multicusp metal ion source

1994 ◽  
Vol 65 (4) ◽  
pp. 1269-1271
Author(s):  
Takatoshi Yamashita ◽  
Yutaka Inouchi ◽  
Shuichi Fujiwara ◽  
Yasuhiro Matsuda ◽  
Hiroshi Inami ◽  
...  
Keyword(s):  
Metal Ion ◽  
Ion Beam ◽  
Ion Source ◽  
High Current

scholarly journals Ion Beam Modification of the Y-Ba-Cu-O System with the Mevva High Current Metal Ion Source

1989 ◽  
Vol 147 ◽  
Author(s):  
I. G. Brown ◽  
M. D. Rubin ◽  
K. M. Yu ◽  
R. Mutikainen ◽  
N. W. Cheung
Keyword(s):  
Ion Implantation ◽  
Metal Ion ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Rf Sputtering ◽  
Ion Source ◽  
Vacuum Arc ◽  
High Dose ◽  
High Current ◽  
Ion Beam Modification

AbstractWe have used high-dose metal ion implantation to ‘fine tune’ the composition of Y-Ba- Cu-O thin films. The films were prepared by either of two rf sputtering systems. One system uses three modified Varian S-guns capable of sputtering various metal powder targets; the other uses reactive rf magnetron sputtering from a single mixed-oxide stoichiometric solid target. Film thickness was typically in the range 2000–5000 A. Substrates of magnesium oxide, zirconia-buffered silicon, and strontium titanate have been used. Ion implantation was carried out using a metal vapor vacuum arc (MEVVA) high current metal ion source. Beam energy was 100–200 keV, average beam current about 1 mA, and dose up to about 1017 ions/cm2. Samples were annealed at 800 – 900°C in wet oxygen. Film composition was determined using Rutherford Backscattering Spectrometry (RBS), and the resistivity versus temperature curves were obtained using a four-point probe method. We find that the zero-resistance temperature can be greatly increased after implantation and reannealing, and that the ion beam modification technique described here provides a powerful means for optimizing the thin film superconducting properties.

Experimental Results of Ion Beam Extraction of High-Current Ion Source for EAST Neutral Beam Injector

2013 ◽  
Vol 32 (4) ◽  
pp. 513-517 ◽  
Author(s):  
Ya Hong Xie ◽  
◽  
Chun Dong Hu ◽  
Sheng Liu ◽  
Cai Chao Jiang ◽  
...  
Keyword(s):  
Ion Beam ◽  
Ion Source ◽  
Experimental Results ◽  
Neutral Beam ◽  
Beam Extraction ◽  
High Current ◽  
Neutral Beam Injector
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