Effect of Using Chemical Vapor Deposition WSi[sub 2] and Postmetallization Annealing on GaAs Metal-Oxide-Semiconductor Capacitors

2010 ◽  
Vol 13 (9) ◽  
pp. H328 ◽  
Author(s):  
B. S. Ong ◽  
K. L. Pey ◽  
C. Y. Ong ◽  
C. S. Tan ◽  
C. L. Gan ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Metal Oxide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor

Ge diffusion in Ge metal oxide semiconductor with chemical vapor deposition HfO2 dielectric

2005 ◽  
Vol 87 (5) ◽  
pp. 051922 ◽  
Author(s):  
N. Lu ◽  
W. Bai ◽  
A. Ramirez ◽  
C. Mouli ◽  
A. Ritenour ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Metal Oxide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor

Electrical Properties of Ultrathin Al2O3 Films Grown by Metalorganic Chemical Vapor Deposition for Advanced Complementary Metal-oxide Semiconductor Gate Dielectric Applications

2005 ◽  
Vol 20 (6) ◽  
pp. 1536-1543 ◽  
Author(s):  
Spyridon Skordas ◽  
Filippos Papadatos ◽  
Steven Consiglio ◽  
Eric T. Eisenbraun ◽  
Alain E. Kaloyeros ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Electrical Properties ◽  
Metal Oxide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Silicon Oxynitride ◽  
Oxide Semiconductor ◽  
Organic Chemical

The electrical properties of ultrathin amorphous Al2O3 films, grown by low temperature metal-organic chemical vapor deposition from aluminum(III) 2,4-pentanedionate and water as co-reactants, were examined for potential applications as gate dielectrics in emerging complementary metal-oxide semiconductor technologies. High-frequency capacitance–voltage and current–voltage techniques were used to evaluate Al2O3 films deposited on silicon oxynitride on n-type silicon (100) substrates, with thickness ranging from 2.5 to 6.5 nm, as a function of postdeposition annealing regimes. Dielectric constant values ranging from 11.0 to11.5 were obtained, depending on the annealing method used. Metal-insulator-semiconductor devices were demonstrated with net equivalent oxide thickness values of 1.3 nm. Significant charge traps were detected in the as-deposited films and were mostly passivated by the subsequent annealing treatment. The main charge injection mechanism in the dielectric layer was found to follow a Poole–Frenkel behavior, with post-annealed films exhibiting leakage current an order of magnitude lower than that of equivalent silicon oxide films.

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