A new design of the sputter type metal ion source and its characteristics of ion beam extraction

Author(s):  
W. Kim ◽  
B.H. Choi ◽  
J.T. Jin ◽  
K.-S. Jung ◽  
S.H. Do ◽  
...  
1990 ◽  
Vol 61 (1) ◽  
pp. 538-540 ◽  
Author(s):  
Yutaka Inouchi ◽  
Hideki Tanaka ◽  
Hiroshi Inami ◽  
Fumio Fukumaru ◽  
Kouzi Matsunaga

2018 ◽  
Vol 4 (3) ◽  
Author(s):  
Hu Chundong ◽  
Wu Mingshan ◽  
Xie Yahong ◽  
Wei Jianglong ◽  
Yu Ling

During the process of beam extraction in positive ion source under high voltage region, a large number of electrons are produced in the gaps of grids. After back-streaming acceleration, these electrons go back to arc chamber or impinge grids and then heat back plate or grids, which are harmful for the safety of ion source. Under the situation of poor beam extraction optics, a large part of the primary beam ions bombard the surface of suppressor grid (SG). And this process produces a large number of electrons. Due to the huge extracted voltage, the secondary electron emission coefficient of the SG surface is also high. As a result, the grids' current grows. According to the measurement of the current of SG and the calculation of the perveance of the corresponding shoot, the effect of ion beam divergence angle on back-streaming electrons can be analyzed. When the beam divergence angle increases, the number of back-streaming electrons increases rapidly, and grids' current changes significantly, especially the current of gradient grid and SG. The results can guide the parameters operating on the ion source for Experimental Advanced Superconducting Tokamak-neutral beam injection (EAST-NBI) and find the reasonable operation interval of perveance and to ensure the safety and stable running of the ion source, which has great significance on the development of long pulse, high power ion source.


1992 ◽  
Vol 295 ◽  
Author(s):  
Mikio Takai ◽  
Ryou Mimura ◽  
Hiroshi Sawaragi ◽  
Ryuso Aihara

AbstractA nondestructive three-dimensional RBS/channeling analysis system with an atomic resolution has been designed and is being constructed in Osaka University for analysis of nanostructured surfaces and interfaces. An ultra high-vacuum sample-chamber with a threeaxis goniometer and a toroidal electrostatic analyzer for medium energy ion scattering (MEIS) was combined with a short acceleration column for a focused ion beam. A liquid metal ion source (LMIS) for light metal ions such as Li+ or Be+ was mounted on the short column.A minimum beam spot-size of about 10 nm with a current of 10 pA is estimated by optical property calculation for 200 keV Li+ LMIS. An energy resolution of 4 × 10-3 (AE/E) for the toroidal analyzer gives rise to atomic resolution in RBS spectra for Si and GaAs. This system seems feasible for atomic level analysis of localized crystalline/disorder structures and surfaces.


1985 ◽  
Vol 45 ◽  
Author(s):  
David R Kingham ◽  
Vincent J Mifsud

ABSTRACTA theoretical model of liquid metal ion source (LMIS) operation has been developed by Kingham and Swanson. In this paper we consider beams from LMIS on the basis of this model. In particular we consider properties such as angular intensity, energy spread and relative abundance of differently charged species of the ion beam, and the dependence of these properties on source current and elemental composition. The conclusion is that the brightest focussed beam for a given probe size is attainable at the lowest possible source current as previously stated by Swanson. LMIS sources have an onset current of typically 1-2[A and will not operate stably below this current, thus limiting the maximum focussed ion beam brightness. The physical reason for this is discussed. The relevance of these properties to fine focussed ion beam applications, particularly semiconductor processing, is discussed. Useful, and in some cases unique, device manufacturing techniques can be postulated using one or more of the momentum, energy or atomic addition properties inherant tothis type of system. Advanced research tools are discussed, together with some examples of the use of microfocussed ion beams with probe sizes down to less than 50nm. Immediate applications include: high resolution ion imaging and SIMS microanalysis; ion beam machining and microfabrication; ion beam resist exposure and ion beam mask repair.


1982 ◽  
Vol 53 (9) ◽  
pp. 6018-6028 ◽  
Author(s):  
Junzo Ishikawa ◽  
Fumimichi Sano ◽  
Toshinori Takagi

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