Crystallization at initial stage of low‐temperature polycrystalline silicon growth using ZnS buffer layer with 〈111〉 preferred orientation

1994 ◽  
Vol 65 (12) ◽  
pp. 1549-1551 ◽  
Author(s):  
T. Matsumoto ◽  
Y. Nagahiro ◽  
Y. Nasu ◽  
K. Oki ◽  
M. Okabe
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Polycrystalline Silicon ◽  
Preferred Orientation ◽  
Initial Stage ◽  
Silicon Growth

scholarly journals Enhanced Light Scattering by Preferred Orientation Control of Ga Doped ZnO Films Prepared through MOCVD

2016 ◽  
Vol 2016 ◽  
pp. 1-7 ◽  
Author(s):  
Long Giang Bach ◽  
Nam Giang Nguyen ◽  
Van Thi Thanh Ho
Keyword(s):  
Thin Film ◽  
High Temperature ◽  
Light Scattering ◽  
Low Temperature ◽  
Buffer Layer ◽  
Film Growth ◽  
Preferred Orientation ◽  
Zno Films ◽  
Texture Surface ◽  
Zno Buffer Layer

We have explored the effective approach to fabricate GZO/ZnO films that can make the pyramidal surface structures of GZO films for effective light scattering by employing a low temperature ZnO buffer layer prior to high temperature GZO film growth. The GZO thin films exhibit the typical preferred growth orientations along the (002) crystallographic direction at deposition temperature of 400°C and SEM showed that column-like granule structure with planar surface was formed. In contrast, GZO films with a pyramidal texture surface were successfully developed by the control of (110) preferred orientation. We found that the light diffuse transmittance of the film with a GZO (800 nm)/ZnO (766 nm) exhibited 13% increase at 420 nm wavelength due to the formed large grain size of the pyramidal texture surface. Thus, the obtained GZO films deposited over ZnO buffer layer have high potential for use as front TCO layers in Si-based thin film solar cells. These results could develop the potential way to fabricate TCO based ZnO thin film using MOCVD or sputtering techniques by depositing a low temperature ZnO layer to serve as a template for high temperature GZO film growth. The GZO films exhibited satisfactory optoelectric properties.

Initial Stages of MOCVD Growth of Gallium Nitride Using a Multi-Step Growth Approach

1997 ◽  
Vol 468 ◽  
Author(s):  
J. T. Kobayashi ◽  
N. P. Kobayashi ◽  
P. D. Dapkus ◽  
X. Zhang ◽  
D. H. Rich
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Chemical Vapor ◽  
Buffer Layers ◽  
Mocvd Growth ◽  
Initial Stage ◽  
Step Growth ◽  
Van Der Pauw ◽  
Growth Approach

ABSTRACTA multilayer buffer layer approach to GaN growth has been developed in which the thermal desorption and mass transport of low temperature buffer layer are minimized by deposition of successive layers at increased temperatures. High quality GaN with featureless surface morphology has been grown on (0001) sapphire substrate by metalorganic chemical vapor deposition using this multilayer buffer layer approach. The lateral growth and coalescence of truncated 3D islands (TTIs) nucleated on low temperature buffer layers at the initial stage of overlayer growth is affected by the thickness of the final buffer layer on which nucleation of TTIs takes place. The effect of the thickness of this buffer layer on the quality of GaN is studied by using scanning electron microscopy, van der Pauw geometry Hall measurements and cathodoluminescence and an optimum value of 400Å is obtained.

Mechanism of low‐temperature polycrystalline silicon growth from a SiF4/SiH4/H2plasma

1995 ◽  
Vol 77 (2) ◽  
pp. 646-652 ◽  
Author(s):  
H. Kakinuma ◽  
M. Mohri ◽  
T. Tsuruoka
Keyword(s):  
Low Temperature ◽  
Polycrystalline Silicon ◽  
Silicon Growth

The Effect of the Thickness of the Low Temperature AlN Nucleation Layer on the Material Properties of GaN Grown on a Double-Step AlN Buffer Layer by the MOCVD Method

2015 ◽  
Vol 45 (2) ◽  
pp. 859-866 ◽  
Author(s):  
Wei-Ching Huang ◽  
Chung-Ming Chu ◽  
Chi-Feng Hsieh ◽  
Yuen-Yee Wong ◽  
Kai-wei Chen ◽  
...  
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Material Properties ◽  
Double Step ◽  
Nucleation Layer ◽  
Aln Buffer

Initial stage of semiinsulating polycrystalline silicon film growth

2008 ◽  
Vol 37 (6) ◽  
pp. 349-355
Author(s):  
A. S. Turtsevich ◽  
O. Yu. Nalivaiko ◽  
V. A. Solodukha ◽  
V. V. Glukhmanchuk ◽  
N. G. Tsirkunova ◽  
...  
Keyword(s):  
Polycrystalline Silicon ◽  
Film Growth ◽  
Silicon Film ◽  
Initial Stage ◽  
Polycrystalline Silicon Film

Reliability of Low Temperature Polycrystalline Silicon Thin-Film Transistors with Ultrathin Gate Oxide

2007 ◽  
Vol 46 (7A) ◽  
pp. 4021-4027 ◽  
Author(s):  
Hitoshi Ueno ◽  
Yuta Sugawara ◽  
Hiroshi Yano ◽  
Tomoaki Hatayama ◽  
Yukiharu Uraoka ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Gate Oxide ◽  
Silicon Thin Film
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