scholarly journals Enhanced Light Scattering by Preferred Orientation Control of Ga Doped ZnO Films Prepared through MOCVD

2016 ◽  
Vol 2016 ◽  
pp. 1-7 ◽  
Author(s):  
Long Giang Bach ◽  
Nam Giang Nguyen ◽  
Van Thi Thanh Ho
Keyword(s):  
Thin Film ◽  
High Temperature ◽  
Light Scattering ◽  
Low Temperature ◽  
Buffer Layer ◽  
Film Growth ◽  
Preferred Orientation ◽  
Zno Films ◽  
Texture Surface ◽  
Zno Buffer Layer

We have explored the effective approach to fabricate GZO/ZnO films that can make the pyramidal surface structures of GZO films for effective light scattering by employing a low temperature ZnO buffer layer prior to high temperature GZO film growth. The GZO thin films exhibit the typical preferred growth orientations along the (002) crystallographic direction at deposition temperature of 400°C and SEM showed that column-like granule structure with planar surface was formed. In contrast, GZO films with a pyramidal texture surface were successfully developed by the control of (110) preferred orientation. We found that the light diffuse transmittance of the film with a GZO (800 nm)/ZnO (766 nm) exhibited 13% increase at 420 nm wavelength due to the formed large grain size of the pyramidal texture surface. Thus, the obtained GZO films deposited over ZnO buffer layer have high potential for use as front TCO layers in Si-based thin film solar cells. These results could develop the potential way to fabricate TCO based ZnO thin film using MOCVD or sputtering techniques by depositing a low temperature ZnO layer to serve as a template for high temperature GZO film growth. The GZO films exhibited satisfactory optoelectric properties.

GaN Growth on Si Using ZnO Buffer Layer

2003 ◽  
Vol 764 ◽  
Author(s):  
K.C. Kim ◽  
S.W. Kang ◽  
O. Kryliouk ◽  
T.J. Anderson ◽  
D. Craciun ◽  
...  
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Buffer Layer ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Films ◽  
Silicon Substrates ◽  
Zno Buffer Layer ◽  
Thermal Stability Of

AbstractZnO films were deposited by Pulsed Laser Deposition (PLD) onto silicon substrates to serve as a buffer layer for GaN films grown by MOCVD. A ZnO buffer layer was found to improve the quality of GaN grown on Si. The thermal stability of ZnO as a buffer layer was also examined. It was determined that exposure of ZnO/Si to NH3 at high temperature (> 600°C) results in the decomposition of ZnO and subsequent poor nucleation of GaN. The ZnO layer thickness on GaN quality was found to be important.

The Growth of ZnO on CrN Buffer Layer Using Surface Phase Control by Plasma Assisted Molecular-beam Epitaxy

2006 ◽  
Vol 957 ◽  
Author(s):  
Jinsub Park ◽  
Tsutomu Minegishi ◽  
Seunghwan Park ◽  
Inho Im ◽  
Takahasi Hanada ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Film Growth ◽  
Surface Oxidation ◽  
High Energy ◽  
Zno Films ◽  
Rocksalt Structure ◽  
Structure Changes ◽  
Zno Buffer Layer

ABSTRACTEpitaxial ZnO films are successfully grown on Al2O3 substrates with phase controlled CrN buffer layer using Zn and O-plasma pre-exposures on CrN layers by plasma assisted molecular beam epitaxy (P-MBE). The Zn exposures on CrN layers prior to ZnO film growth result in the formation of rocksalt CrN without surface oxidation. On the other hand, the surface of the initially deposited CrN layers with rocksalt structure changes into hexagonal structured Cr2O3 after O-plasma exposure as confirmed by reflection high-energy electron diffraction (RHEED) and high resolution transmission electron microscopy (HR TEM). Etching studies show that the ZnO films grown on CrN have +C polarity, while the polarity of ZnO on Cr2O3/CrN double buffer is -C polarity. The interdiffusion of Zn and Cr occurs at the ZnO/CrN interface, while the interdiffusion is negligible at the ZnO/ Cr2O3 interface. The interdiffusion of Cr and Zn can be suppressed by inserting a low-temperature ZnO buffer layer in between ZnO and CrN layers, which helps improve the crystal quality of ZnO layers grown with CrN buffer.

scholarly journals Low Temperature Epitaxial Barium Titanate Thin Film Growth in High Vacuum CVD

2017 ◽  
Vol 4 (18) ◽  
pp. 1700116 ◽  
Author(s):  
Michael Reinke ◽  
Yury Kuzminykh ◽  
Felix Eltes ◽  
Stefan Abel ◽  
Thomas LaGrange ◽  
...  
Keyword(s):  
Thin Film ◽  
Barium Titanate ◽  
Low Temperature ◽  
Film Growth ◽  
High Vacuum ◽  
Thin Film Growth ◽  
Barium Titanate Thin Film ◽  
Titanate Thin Film

Mechanisms of ZnO buffer layer in bottom gate ZnO:Al transparent thin film transistors

2012 ◽  
Vol 134 (2-3) ◽  
pp. 1203-1207 ◽  
Author(s):  
Yung-Hao Lin ◽  
Hsin-Ying Lee ◽  
Ching-Ting Lee ◽  
Cheng-Hsu Chou
Keyword(s):  
Thin Film ◽  
Buffer Layer ◽  
Thin Film Transistors ◽  
Zno Buffer Layer ◽  
Bottom Gate

scholarly journals Quantitative analysis of annealing-induced instabilities of photo-leakage current and negative-bias-illumination-stress in a-InGaZnO thin-film transistors

2019 ◽  
Vol 10 ◽  
pp. 1125-1130 ◽  
Author(s):  
Dapeng Wang ◽  
Mamoru Furuta
Keyword(s):  
Thin Film ◽  
High Temperature ◽  
Low Temperature ◽  
Leakage Current ◽  
Thin Film Transistors ◽  
Temperature Treatment ◽  
Treatment Temperature ◽  
Negative Bias ◽  
Indium Gallium Zinc Oxide ◽  
Negative Bias Illumination Stress

This study examines the effect of the annealing temperature on the initial electrical characteristics and photo-induced instabilities of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs). The extracted electrical parameters from transfer curves suggest that a low-temperature treatment maintains a high density of defects in the IGZO bulk, whereas high-temperature annealing causes a quality degradation of the adjacent interfaces. Light of short wavelengths below 460 nm induces defect generation in the forward measurement and the leakage current increases in the reverse measurement, especially for the low-temperature-annealed device. The hysteresis after negative-bias-illumination-stress (NBIS) is quantitatively investigated by using the double-scan mode and a positive gate pulse. Despite the abnormal transfer properties in the low-temperature-treated device, the excited holes are identically trapped at the front interface irrespective of treatment temperature. NBIS-induced critical instability occurs in the high-temperature-annealed TFT.

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