GaxIn1−xAs/AlAs resonant tunneling diodes grown by atmospheric pressure metalorganic chemical vapor deposition
High performance AlAs/GaXIn1-xAs resonant tunneling diodes by metalorganic chemical vapor deposition
1995 ◽
Vol 24
(10)
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pp. 1387-1390
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1996 ◽
Vol 35
(Part 1, No. 12B)
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pp. 6562-6565
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1998 ◽
Vol 322
(1-2)
◽
pp. 104-107
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