Selective growth of Si/SiGe resonant tunneling diodes by atmospheric pressure chemical vapor deposition

1992 ◽  
Vol 61 (24) ◽  
pp. 2872-2874 ◽  
Author(s):  
A. Zaslavsky ◽  
D. A. Grützmacher ◽  
Y. H. Lee ◽  
W. Ziegler ◽  
T. O. Sedgwick
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Resonant Tunneling ◽  
Chemical Vapor ◽  
Selective Growth ◽  
Resonant Tunneling Diodes ◽  
Tunneling Diodes ◽  
Pressure Chemical

scholarly journals Toward understanding the phase-selective growth mechanism of films and geometrically-shaped flakes of 2D MoTe2

RSC Advances ◽  
2021 ◽  
Vol 11 (61) ◽  
pp. 38839-38848
Author(s):  
Tej B. Limbu ◽  
Bikram Adhikari ◽  
Seung Keun Song ◽  
Basant Chitara ◽  
Yongan Tang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Mechanism ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Selective Growth ◽  
Controlled Growth ◽  
Pressure Chemical

This study investigates the phase-controlled growth of flakes and films of 2D MoTe2 by atmospheric-pressure chemical vapor deposition and presents a thorough understanding on the growth mechanism.

Growth of Single-Crystal Pyrite Films by Atmospheric Pressure Chemical Vapor Deposition

2003 ◽  
Vol 15 (9) ◽  
pp. 1763-1765 ◽  
Author(s):  
Naoyuki Takahashi ◽  
Yusuke Nakatani ◽  
Takuma Yatomi ◽  
Takato Nakamura
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Pressure Chemical

scholarly journals Epitaxial Growth of Magnesia Films on Single Crystalline Magnesia Substrates by Atmospheric-Pressure Chemical Vapor Deposition

2016 ◽  
Vol 5 (2) ◽  
pp. 56
Author(s):  
Keiji Komatsu ◽  
Pineda Marulanda David Alonso ◽  
Nozomi Kobayashi ◽  
Ikumi Toda ◽  
Shigeo Ohshio ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Reciprocal Lattice ◽  
Chemical Vapor ◽  
X Ray ◽  
Pole Figures ◽  
Out Of Plane ◽  
Pressure Chemical

<p class="1Body">MgO films were epitaxially grown on single crystal MgO substrates by atmospheric-pressure chemical vapor deposition (CVD). Reciprocal lattice mappings and X-ray reflection pole figures were used to evaluate the crystal quality of the synthesized films and their epitaxial relation to their respective substrates. The X-ray diffraction profiles indicated that the substrates were oriented out-of-plane during MgO crystal growth. Subsequent pole figure measurements showed how all the MgO films retained the substrate in-plane orientations by expressing the same pole arrangements. The reciprocal lattice mappings indicated that the whisker film showed a relatively strong streak while the continuous film showed a weak one. Hence, highly crystalline epitaxial MgO thin films were synthesized on single crystal MgO substrates by atmospheric-pressure CVD.</p>

Chemical vapor deposition growth of few-layer graphene for transparent conductive films

RSC Advances ◽  
2015 ◽  
Vol 5 (55) ◽  
pp. 44142-44148 ◽  
Author(s):  
Jun Pu ◽  
Lei Tang ◽  
Chaowei Li ◽  
Taotao Li ◽  
Lin Ling ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Growth ◽  
Conductive Films ◽  
Layer Graphene ◽  
Pressure Chemical ◽  
Few Layer Graphene ◽  
Etching Effect

The facile and scalable technique is demonstrated, which grow graphene with controllable layers on copper foil substrates using the etching effect of H2 in atmospheric pressure chemical vapor deposition (APCVD).

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