Selenium and silicon delta‐doping properties of GaAs by atmospheric pressure metalorganic chemical vapor deposition

1990 ◽  
Vol 68 (6) ◽  
pp. 2747-2751 ◽  
Author(s):  
Yong Kim ◽  
Moo Sung Kim ◽  
Suk‐Ki Min ◽  
Choochon Lee ◽  
Kyung‐Hwa Yoo
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Delta Doping ◽  
Metalorganic Chemical

scholarly journals Si Delta Doped GaN Grown by Low-Pressure Metalorganic Chemical Vapor Deposition

1999 ◽  
Vol 4 (S1) ◽  
pp. 305-309
Author(s):  
Jong-Hee Kim ◽  
Gye Mo Yang ◽  
Sung Chul Choi ◽  
Ji Youn Choi ◽  
Hyun Kyung Cho ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Doping Concentration ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Voltage Measurement ◽  
Desorption Process ◽  
Delta Doping ◽  
Metalorganic Chemical

Si delta-doping in the GaN layer has been successfully demonstrated by low-pressure metalorganic chemical vapor deposition at a growth temperature of 1040 . Si delta-doping concentration increases and then decreases with an increase in delta-doping time. This indicates that delta-doping concentration is limited by the desorption process owing to much higher thermal decomposition efficiency of silane at high growth temperatures of GaN. In addition, it was observed that the use of a post-purge step in the ammonia ambient reduces Si delta-doping concentration. From capacitance-voltage measurement, a sharp carrier concentration profile with a full-width at half maximum of 4.1 nm has been achieved with a high peak concentration of 9.8 1018 cm−3.

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