Elastic misfit stress relaxation in highly strained InGaAs/GaAs structures

1994 ◽  
Vol 65 (9) ◽  
pp. 1162-1164 ◽  
Author(s):  
Y. Androussi ◽  
A. Lefebvre ◽  
B. Courboulès ◽  
N. Grandjean ◽  
J. Massies ◽  
...  
2014 ◽  
Vol 78 (4) ◽  
pp. 307-310 ◽  
Author(s):  
E. M. Trukhanov ◽  
A. P. Vasilenko ◽  
I. D. Loshkarev ◽  
A. V. Kolesnikov

1999 ◽  
Vol 583 ◽  
Author(s):  
E. Chason ◽  
J. Yin ◽  
K. Tetz ◽  
R. Beresford ◽  
L. B. Freund ◽  
...  

AbstractWe present real-time measurements of stress relaxation kinetics during epitaxial growth obtained using a wafer-curvature-based technique optimized for in situ studies. Depending on the temperature and misfit strain, different mechanisms of stress relaxation are observed. In heterolayers of InGaAs grown on GaAs (001) substrates, relaxation occurs by a dislocationmediated mechanism. In SiGe layers grown on Si (001) substrates at elevated temperature, relaxation occurs by the formation of islands on the surface. These islands elastically relax misfit stress without the introduction of dislocations at the island-substrate interface.


2012 ◽  
Vol 100 (20) ◽  
pp. 202103 ◽  
Author(s):  
Matthew T. Hardy ◽  
Po Shan Hsu ◽  
Feng Wu ◽  
Ingrid L. Koslow ◽  
Erin C. Young ◽  
...  

1995 ◽  
Vol 66 (25) ◽  
pp. 3450-3452 ◽  
Author(s):  
Y. Androussi ◽  
A. Lefebvre ◽  
C. Delamarre ◽  
L. P. Wang ◽  
A. Dubon ◽  
...  

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