Misfit stress relaxation mechanism in CdTe(100) and CdTe/ZnTe(100) on a GaAs(100) highly mismatched heteroepitaxial layer

1996 ◽  
Vol 80 (6) ◽  
pp. 3238-3243 ◽  
Author(s):  
H. Nishino ◽  
I. Sugiyama ◽  
Y. Nishijima
Keyword(s):  
Stress Relaxation ◽  
Relaxation Mechanism ◽  
Misfit Stress

Misfit Stress Relaxation Mechanism in GeO2/Ge Systems: A Classical Molecular Simulation Study

2019 ◽  
Vol 33 (6) ◽  
pp. 901-912 ◽  
Author(s):  
Takanobu Watanabe ◽  
Tomoya Onda ◽  
Iwao Ohdomari
Keyword(s):  
Stress Relaxation ◽  
Molecular Simulation ◽  
Simulation Study ◽  
Relaxation Mechanism ◽  
Misfit Stress

Optimal and nonoptimal misfit stress relaxation in a semiconductor heterosystem

2014 ◽  
Vol 78 (4) ◽  
pp. 307-310 ◽  
Author(s):  
E. M. Trukhanov ◽  
A. P. Vasilenko ◽  
I. D. Loshkarev ◽  
A. V. Kolesnikov
Keyword(s):  
Stress Relaxation ◽  
Misfit Stress

Stress Relaxation Behavior in PWHT of Welded Components

2011 ◽  
Author(s):  
Jinmiao Zhang ◽  
Pingsha Dong ◽  
Shaopin Song
Keyword(s):  
Residual Stress ◽  
Stress Relaxation ◽  
Dominant Role ◽  
Relaxation Mechanism ◽  
Post Weld Heat Treatment ◽  
Relaxation Behavior ◽  
Material Strength ◽  
Fundamental Issue ◽  
Stress Relaxation Behavior ◽  
Weld Residual Stress

This paper is focused on the discussion of weld residual stress relaxation in a uniform post weld heat treatment (PWHT). In particular, the paper is attempted to address a fundamental issue related to the PWHT stress relaxation behavior, i.e., what is the dominant stress relaxation mechanism in PWHT? Is it due to creep or material strength reduction at elevated temperature? The paper starts with a simplified 3-bar weld model to demonstrate how weld residual stress is developed and relaxed. It then follows with an example of thick section narrow groove weld to highlight the results and conclusions. The results clearly indicate that creep mechanism plays a dominant role in the stress relaxation of PWHT. Several other important observations related to the stress relaxation are also summarized.

In Situ Measurements of Stress Relaxation During Strained Layer Heteroepitaxy

1999 ◽  
Vol 583 ◽  
Author(s):  
E. Chason ◽  
J. Yin ◽  
K. Tetz ◽  
R. Beresford ◽  
L. B. Freund ◽  
...  
Keyword(s):  
Elevated Temperature ◽  
Stress Relaxation ◽  
Epitaxial Growth ◽  
Real Time ◽  
Misfit Strain ◽  
Misfit Stress ◽  
Relaxation Kinetics ◽  
Substrate Interface ◽  
Temperature Relaxation

AbstractWe present real-time measurements of stress relaxation kinetics during epitaxial growth obtained using a wafer-curvature-based technique optimized for in situ studies. Depending on the temperature and misfit strain, different mechanisms of stress relaxation are observed. In heterolayers of InGaAs grown on GaAs (001) substrates, relaxation occurs by a dislocationmediated mechanism. In SiGe layers grown on Si (001) substrates at elevated temperature, relaxation occurs by the formation of islands on the surface. These islands elastically relax misfit stress without the introduction of dislocations at the island-substrate interface.

Trace analysis of non-basal plane misfit stress relaxation in (202¯1) and (303¯1¯) semipolar InGaN/GaN heterostructures

2012 ◽  
Vol 100 (20) ◽  
pp. 202103 ◽  
Author(s):  
Matthew T. Hardy ◽  
Po Shan Hsu ◽  
Feng Wu ◽  
Ingrid L. Koslow ◽  
Erin C. Young ◽  
...  
Keyword(s):  
Stress Relaxation ◽  
Trace Analysis ◽  
Basal Plane ◽  
Misfit Stress

Relaxation of Stress and Electrical Resistivity in Carbon-Filled Vulcanizates at Moderate and High Extensions

1971 ◽  
Vol 44 (1) ◽  
pp. 185-198 ◽  
Author(s):  
A. K. Sircar ◽  
A. Voet ◽  
F. R. Cook
Keyword(s):  
Particle Size ◽  
Electrical Resistivity ◽  
Stress Relaxation ◽  
Carbon Black ◽  
Carbon Chain ◽  
Relaxation Mechanism ◽  
Initial Increase ◽  
Relaxation Rates ◽  
Carbon Structures ◽  
Chain Alignment

Abstract Measurements have been made of the relaxation of stress and electrical resistivity of stretched carbon black-loaded vulcanizates throughout the elongation range up to break. Data were obtained for vulcanizates with a number of carbon blacks, varying in particle size and in structure. The influence of the degree of loading as well as of the type of elastomer was investigated. In a gum vulcanizate there is initially a decline in rate of stress relaxation at increasing elongation as a result of the limited extensibility of the elastomer chains, followed by a constant rate at higher extensions. The level for a carbon-loaded vulcanizate is always higher than for the gum. At lower elongations this is due to an additional relaxation mechanism, the reformation of broken weak bonds between elastomer and filler particles upon standing. At medium and higher elongations, the stress relaxation rate for the carbon-filled vuleanizates increases sharply with increasing extension, due to persistent carbon chain alignment and, at still higher elongation, to rupture of carbon-elastomer bonds, both phenomena leading to additional modes of stress relaxation. Resistivity relaxation rates reflect changes in carbon black distribution. An initial increase at small extensions is due to rebuilding of destroyed transient structures. A decrease in relaxation rates for medium extension ranges is caused by persistent carbon chain alignment, less pronounced at increasing elongation. At the higher elongations carbon-elastomer bonds arc broken, leading to randomization of chains, resulting in negative relaxation rates with higher structure blacks at the highest elongations. All such effects depend to a large extent on the carbon structures. The influence of loading level, of particle size and of elastomer type is discussed.

Sign in / Sign up

Export Citation Format

Share Document