Trace analysis of non-basal plane misfit stress relaxation in (202¯1) and (303¯1¯) semipolar InGaN/GaN heterostructures

2012 ◽  
Vol 100 (20) ◽  
pp. 202103 ◽  
Author(s):  
Matthew T. Hardy ◽  
Po Shan Hsu ◽  
Feng Wu ◽  
Ingrid L. Koslow ◽  
Erin C. Young ◽  
...  
Keyword(s):  
Stress Relaxation ◽  
Trace Analysis ◽  
Basal Plane ◽  
Misfit Stress

Optimal and nonoptimal misfit stress relaxation in a semiconductor heterosystem

2014 ◽  
Vol 78 (4) ◽  
pp. 307-310 ◽  
Author(s):  
E. M. Trukhanov ◽  
A. P. Vasilenko ◽  
I. D. Loshkarev ◽  
A. V. Kolesnikov
Keyword(s):  
Stress Relaxation ◽  
Misfit Stress

In Situ Measurements of Stress Relaxation During Strained Layer Heteroepitaxy

1999 ◽  
Vol 583 ◽  
Author(s):  
E. Chason ◽  
J. Yin ◽  
K. Tetz ◽  
R. Beresford ◽  
L. B. Freund ◽  
...  
Keyword(s):  
Elevated Temperature ◽  
Stress Relaxation ◽  
Epitaxial Growth ◽  
Real Time ◽  
Misfit Strain ◽  
Misfit Stress ◽  
Relaxation Kinetics ◽  
Substrate Interface ◽  
Temperature Relaxation

AbstractWe present real-time measurements of stress relaxation kinetics during epitaxial growth obtained using a wafer-curvature-based technique optimized for in situ studies. Depending on the temperature and misfit strain, different mechanisms of stress relaxation are observed. In heterolayers of InGaAs grown on GaAs (001) substrates, relaxation occurs by a dislocationmediated mechanism. In SiGe layers grown on Si (001) substrates at elevated temperature, relaxation occurs by the formation of islands on the surface. These islands elastically relax misfit stress without the introduction of dislocations at the island-substrate interface.

Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy

2011 ◽  
Vol 109 (10) ◽  
pp. 103522 ◽  
Author(s):  
Alexey E. Romanov ◽  
Erin C. Young ◽  
Feng Wu ◽  
Anurag Tyagi ◽  
Chad S. Gallinat ◽  
...  
Keyword(s):  
Stress Relaxation ◽  
Basal Plane ◽  
Misfit Dislocations
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