Plastic stress relaxation in highly strained In0.30Ga0.70As/GaAs structures

1995 ◽  
Vol 66 (25) ◽  
pp. 3450-3452 ◽  
Author(s):  
Y. Androussi ◽  
A. Lefebvre ◽  
C. Delamarre ◽  
L. P. Wang ◽  
A. Dubon ◽  
...  
Keyword(s):  
Stress Relaxation ◽  
Highly Strained ◽  
Plastic Stress

Elastic and Plastic Stress Relaxation in Stripes and Circular Mesas

1995 ◽  
Vol 47-48 ◽  
pp. 503-508 ◽  
Author(s):  
S.C. Jain ◽  
K. Pinardi ◽  
A.H. Harker ◽  
Hans Richter
Keyword(s):  
Stress Relaxation ◽  
Plastic Stress

Luminescence Studies on Plastic Stress Relaxation in ZnSe/GaAs(001)

2000 ◽  
Vol 222 (1) ◽  
pp. 169-177 ◽  
Author(s):  
J. Schreiber ◽  
U. Hilpert ◽  
L. H�ring ◽  
L. Worschech ◽  
B. K�nig ◽  
...  
Keyword(s):  
Stress Relaxation ◽  
Plastic Stress

Elastic misfit stress relaxation in highly strained InGaAs/GaAs structures

1994 ◽  
Vol 65 (9) ◽  
pp. 1162-1164 ◽  
Author(s):  
Y. Androussi ◽  
A. Lefebvre ◽  
B. Courboulès ◽  
N. Grandjean ◽  
J. Massies ◽  
...  
Keyword(s):  
Stress Relaxation ◽  
Misfit Stress ◽  
Highly Strained

Modelling plastic stress relaxation in shaped sapphire crystal growth

1999 ◽  
Vol 198-199 ◽  
pp. 232-238 ◽  
Author(s):  
F. Théodore ◽  
T. Duffar ◽  
F. Louchet
Keyword(s):  
Crystal Growth ◽  
Stress Relaxation ◽  
Sapphire Crystal ◽  
Plastic Stress

Stress Relaxation and the Formation of Silicides in the Process of the Crystallization of NI-NB Films on SI

1991 ◽  
Vol 49 ◽  
pp. 898-899
Author(s):  
N. Rozhanski ◽  
V. Lifshitz
Keyword(s):  
Thin Films ◽  
Stress Relaxation ◽  
Integrated Circuits ◽  
Direct Evidence ◽  
Alloy Film ◽  
Diffusion Barriers ◽  
Effective Barrier

Thin films of amorphous Ni-Nb alloys are of interest since they can be used as diffusion barriers for integrated circuits on Si. A native SiO2 layer is an effective barrier for Ni diffusion but it deformation during the crystallization of the alloy film lead to the appearence of diffusion fluxes through it and the following formation of silicides. This study concerns the direct evidence of the action of stresses in the process of the crystallization of Ni-Nb films on Si and the structure of forming NiSi2 islands.

BDNF Val⁶⁶Met polymorphism to generalized anxiety disorder pathways: Indirect effects via attenuated parasympathetic stress-relaxation reactivity.

2020 ◽  
Vol 129 (3) ◽  
pp. 237-247 ◽  
Author(s):  
Hsin-An Chang ◽  
Wen-Hui Fang ◽  
Yia-Ping Liu ◽  
Nian-Sheng Tzeng ◽  
Jia-Fwu Shyu ◽  
...  
Keyword(s):  
Anxiety Disorder ◽  
Stress Relaxation ◽  
Generalized Anxiety Disorder ◽  
Indirect Effects ◽  
Generalized Anxiety
Sign in / Sign up

Export Citation Format

Share Document