Long‐wavelength stacked SiGe/Si heterojunction internal photoemission infrared detectors using multiple SiGe/Si layers

1994 ◽  
Vol 64 (18) ◽  
pp. 2370-2372 ◽  
Author(s):  
J. S. Park ◽  
T. L. Lin ◽  
E. W. Jones ◽  
H. M. Del Castillo ◽  
S. D. Gunapala
Keyword(s):  
Infrared Detectors ◽  
Internal Photoemission ◽  
Long Wavelength

Long-wavelength stacked Si 1-x Ge x /Si heterojunction-internal-photoemission infrared detectors

1993 ◽  
Author(s):  
Jin S. Park ◽  
True L. Lin ◽  
Eric W. Jones ◽  
Hector M. Del Castillo ◽  
Thomas George ◽  
...  
Keyword(s):  
Infrared Detectors ◽  
Internal Photoemission ◽  
Long Wavelength

SiGe/Si heterojunction internal photoemission long-wavelength infrared detectors fabricated by molecular beam epitaxy

1991 ◽  
Vol 38 (5) ◽  
pp. 1141-1144 ◽  
Author(s):  
T.-L. Lin ◽  
A. Ksendzov ◽  
S.M. Dejewski ◽  
E.W. Jones ◽  
R.W. Fathaure ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Infrared Detectors ◽  
Molecular Beam ◽  
Internal Photoemission ◽  
Long Wavelength ◽  
Long Wavelength Infrared

SiGe/Si Heterojunction Internal Photoemission Long-Wavelength Infrared Detectors

1990 ◽  
Vol 216 ◽  
Author(s):  
T. L. Lin ◽  
A. Ksendzov ◽  
S. M. Dejewski ◽  
E. W. Jones ◽  
R. W. Fathauer ◽  
...  
Keyword(s):  
Infrared Detectors ◽  
Molecular Beam ◽  
Low Cost ◽  
Focal Plane Arrays ◽  
Internal Photoemission ◽  
Long Wavelength ◽  
Indium Bump ◽  
Good Uniformity ◽  
Easy Integration ◽  
Long Wavelength Infrared

There is a great need of long-wavelength (8-17μm) infrared (LWIR) focal plane arrays (FPAs) for a variety of space and defense applications. Si-based infrared detectors offers several important advantages, including good uniformity, low cost, and easy integration with Si readout circuitry either monolithically or by indium bump bonding to form large arrays. We report here a novel SiGe/Si heterojunction internal photoemission (HIP) long-wavelength infrared (LWIR) detector fabricated by molecular beam epitaxy [1].

Long wavelength InAs/InGaSb infrared detectors: Optimization of carrier lifetimes

1995 ◽  
Vol 78 (12) ◽  
pp. 7143-7152 ◽  
Author(s):  
C. H. Grein ◽  
P. M. Young ◽  
M. E. Flatté ◽  
H. Ehrenreich
Keyword(s):  
Infrared Detectors ◽  
Long Wavelength ◽  
Carrier Lifetimes

Tuning In0.3Ga0.7As∕GaAs multiple quantum dots for long-wavelength infrared detectors

2004 ◽  
Vol 85 (6) ◽  
pp. 1003-1005 ◽  
Author(s):  
Ying Chao Chua ◽  
E. A. Decuir ◽  
B. S. Passmore ◽  
K. H. Sharif ◽  
M. O. Manasreh ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Infrared Detectors ◽  
Multiple Quantum ◽  
Long Wavelength ◽  
Long Wavelength Infrared

HgCdTe/Si materials for long wavelength infrared detectors

2004 ◽  
Vol 33 (6) ◽  
pp. 526-530 ◽  
Author(s):  
S. M. Johnson ◽  
A. A. Buell ◽  
M. F. Vilela ◽  
J. M. Peterson ◽  
J. B. Varesi ◽  
...  
Keyword(s):  
Infrared Detectors ◽  
Long Wavelength ◽  
Long Wavelength Infrared
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