Long wavelength InAs/InGaSb infrared detectors: Optimization of carrier lifetimes

1995 ◽  
Vol 78 (12) ◽  
pp. 7143-7152 ◽  
Author(s):  
C. H. Grein ◽  
P. M. Young ◽  
M. E. Flatté ◽  
H. Ehrenreich
Keyword(s):  
Infrared Detectors ◽  
Long Wavelength ◽  
Carrier Lifetimes

Tuning In0.3Ga0.7As∕GaAs multiple quantum dots for long-wavelength infrared detectors

2004 ◽  
Vol 85 (6) ◽  
pp. 1003-1005 ◽  
Author(s):  
Ying Chao Chua ◽  
E. A. Decuir ◽  
B. S. Passmore ◽  
K. H. Sharif ◽  
M. O. Manasreh ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Infrared Detectors ◽  
Multiple Quantum ◽  
Long Wavelength ◽  
Long Wavelength Infrared

HgCdTe/Si materials for long wavelength infrared detectors

2004 ◽  
Vol 33 (6) ◽  
pp. 526-530 ◽  
Author(s):  
S. M. Johnson ◽  
A. A. Buell ◽  
M. F. Vilela ◽  
J. M. Peterson ◽  
J. B. Varesi ◽  
...  
Keyword(s):  
Infrared Detectors ◽  
Long Wavelength ◽  
Long Wavelength Infrared

Mid- and Long-Wavelength Barrier Infrared Detectors

2013 ◽  
Author(s):  
David Z. Ting ◽  
Alexander Soibel ◽  
Sam A. Keo ◽  
Cory J. Hill ◽  
Jason M. Mumolo ◽  
...  
Keyword(s):  
Infrared Detectors ◽  
Long Wavelength

ICP etching for InAs-based InAs/GaAsSb superlattice long wavelength infrared detectors

2018 ◽  
Vol 90 ◽  
pp. 110-114 ◽  
Author(s):  
Min Huang ◽  
Jianxin Chen ◽  
Jiajia Xu ◽  
Fangfang Wang ◽  
Zhicheng Xu ◽  
...  
Keyword(s):  
Infrared Detectors ◽  
Long Wavelength ◽  
Icp Etching ◽  
Long Wavelength Infrared

QUANTUM WELL INFRARED PHOTOCONDUCTORS IN INFRARED DETECTORS TECHNOLOGY

2002 ◽  
Vol 12 (03) ◽  
pp. 593-658 ◽  
Author(s):  
A. ROGALSKI
Keyword(s):  
Quantum Well ◽  
Schottky Barrier ◽  
Infrared Detectors ◽  
Infrared Photodetectors ◽  
Ir Detectors ◽  
High Quantum Efficiency ◽  
Long Wavelength ◽  
Quantum Well Infrared Photodetectors ◽  
G Ratio ◽  
Hgcdte Photodiodes

Investigations of the performance of quantum well infrared photodetectors (QWIPs) as compared to other types of semiconductor infrared (IR) detectors are presented. In comparative studies both photon and thermal detectors are considered. More attention is paid to photon detectors and between them we can distinguish: HgCdTe photodiodes, InSb photodiodes, Schottky barrier photoemissive detectors, and doped silicon detectors. Special attention has been paid to competitive technologies in long wavelength IR (LWIR) and very LWIR (VLWIR) spectral ranges with emphasis on the material properties, device structure, and their impact on FPA performance. The potential performance of different materials as infrared detectors is examined utilizing the α/G ratio, where α is the absorption coefficient and G is the thermal generation. From the discussion results, LWIR QWIP cannot compete with HgCdTe photodiode as the single device especially at higher temperature operation(> 70 K) due to fundamental limitations associated with intersubband transitions. However, the advantage of HgCdTe is less distinct in the temperature range below 50 K due to problems involved in the HgCdTe material (p-type doping, Shockley–Read recombination, trap-assisted tunneling, surface and interface instabilities). Even though the QWIP is a photoconductor, several its properties such as high impedance, fast response time, long integration time, and low power consumption, well comply with requirements for large FPAs fabrication. Due to the high material quality at low temperature, QWIP has potential advantages over HgCdTe for VLWIR FPA applications in terms of the array size, uniformity, yield and cost of the systems. Both HgCdTe photodiodes and quantum well infrared photodetectors offer multicolor capability in the MWIR and LWIR range. Powerful possibilities of QWIP technology are connected with VLWIR FPA applications and with multicolor detection. QWIP FPAs combine the advantages of PtSi Schottky barrier arrays (high uniformity, high yield, radiation hardness, large arrays, lower cost) with the advantages of HgCdTe (high quantum efficiency and long wavelength response).

Modeling of HgCdTe Heterojunction Devices

1986 ◽  
Vol 90 ◽  
Author(s):  
Ken Zanio ◽  
Ken Hay
Keyword(s):  
Conduction Band ◽  
Infrared Detectors ◽  
Minority Carrier ◽  
Spectral Response ◽  
Long Wavelength ◽  
Barrier Formation ◽  
Diffusion Parameters ◽  
Doping Profiles ◽  
Heterostructure Devices ◽  
And Diffusion

ABSTRACTA model for generating the composition and doping profiles from growth and diffusion parameters was developed for heterostructure devices. Poisson's equation was applied to these structures to predict barriers in the conduction band to minority carrier flow for long wavelength HgCdTe infrared detectors prepared by LPE techniques. Spectral response and quantum efficiency measurements illustrate the presence of these barriers and support the use of this model in predicting barrier formation.

Long-wavelength quantum-well infrared detectors based on intersubband transitions in InGaAs/InP quantum wells

1993 ◽  
Author(s):  
Jan Y. Andersson ◽  
Lennart Lundqvist ◽  
Z. F. Paska ◽  
Klaus P. Streubel ◽  
Johan Wallin
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Infrared Detectors ◽  
Intersubband Transitions ◽  
Long Wavelength
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