The effect of ion-implantation damage on dopant diffusion in silicon during shallow-junction formation

Yudong Kim; Hisham Z. Massoud; Richard B. Fair

doi:10.1007/bf02657400

The effect of ion-implantation damage on dopant diffusion in silicon during shallow-junction formation

Journal of Electronic Materials ◽

10.1007/bf02657400 ◽

1989 ◽

Vol 18 (2) ◽

pp. 143-150 ◽

Cited By ~ 74

Author(s):

Yudong Kim ◽

Hisham Z. Massoud ◽

Richard B. Fair

Keyword(s):

Ion Implantation ◽

Dopant Diffusion ◽

Shallow Junction ◽

Implantation Damage ◽

Junction Formation

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Gate overlap length reduction and shallow junction formation in high-performance fine MOSFETs by ion implantation through thin oxide film

Electronics Letters ◽

10.1049/el:19981653 ◽

1998 ◽

Vol 34 (25) ◽

pp. 2436

Author(s):

T. Oishi ◽

A. Furukawa ◽

K. Shiozawa ◽

Y. Abe ◽

Y. Tokuda

Keyword(s):

Oxide Film ◽

Ion Implantation ◽

High Performance ◽

Shallow Junction ◽

Thin Oxide Film ◽

Junction Formation ◽

Thin Oxide ◽

Length Reduction

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Molecular dynamics simulations of cluster ion implantation for shallow junction formation

10.1063/1.1395465 ◽

2001 ◽

Cited By ~ 1

Author(s):

Takaaki Aoki

Keyword(s):

Molecular Dynamics ◽

Ion Implantation ◽

Molecular Dynamics Simulations ◽

Shallow Junction ◽

Junction Formation ◽

Cluster Ion ◽

Dynamics Simulations

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Shallow junction formation by polyatomic cluster ion implantation

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/s0168-583x(96)00451-x ◽

1997 ◽

Vol 121 (1-4) ◽

pp. 345-348 ◽

Cited By ~ 36

Author(s):

D. Takeuchi ◽

N. Shimada ◽

J. Matsuo ◽

I. Yamada

Keyword(s):

Ion Implantation ◽

Shallow Junction ◽

Junction Formation ◽

Cluster Ion

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n/sup +//p ultra-shallow junction formation with plasma immersion ion implantation

1997 IEEE Hong Kong Proceedings Electron Devices Meeting HKEDM-97 ◽

10.1109/hkedm.1997.642287 ◽

2002 ◽

Author(s):

B.L. Yang ◽

E.C. Jones ◽

N.W. Cheung ◽

Jiqun Shao ◽

H. Wong ◽

...

Keyword(s):

Ion Implantation ◽

Shallow Junction ◽

Junction Formation ◽

Plasma Immersion Ion Implantation

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Shallow junction formation by dopant diffusion frominsitudoped polycrystalline silicon chemically vapor deposited in a rapid thermal processor

Applied Physics Letters ◽

10.1063/1.103097 ◽

1990 ◽

Vol 56 (18) ◽

pp. 1778-1780 ◽

Cited By ~ 8

Author(s):

T. Y. Hsieh ◽

H. G. Chun ◽

D. L. Kwong ◽

D. B. Spratt

Keyword(s):

Polycrystalline Silicon ◽

Dopant Diffusion ◽

Shallow Junction ◽

Junction Formation ◽

Chemically Vapor Deposited

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The effect of plasma exposure and annealing atmosphere on shallow junction formation using plasma source ion implantation

Surface and Coatings Technology ◽

10.1016/s0257-8972(02)00140-8 ◽

2002 ◽

Vol 157 (1) ◽

pp. 19-25 ◽

Cited By ~ 3

Author(s):

Jeonghee Cho ◽

Seunghee Han ◽

Yeonhee Lee ◽

Ok Kyung Kim ◽

Gon-Ho Kim ◽

...

Keyword(s):

Ion Implantation ◽

Plasma Source ◽

Annealing Atmosphere ◽

Plasma Exposure ◽

Shallow Junction ◽

Junction Formation ◽

Plasma Source Ion Implantation

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Ultra-shallow junction formation in silicon using ion implantation

Ion Beam Processing of Materials and Deposition Processes of Protective Coatings ◽

10.1016/b978-0-444-82410-3.50042-4 ◽

1996 ◽

pp. 177-183

Author(s):

A.F. Tasch ◽

S.K. Banerjee

Keyword(s):

Ion Implantation ◽

Shallow Junction ◽

Junction Formation

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Silicided shallow junction formation by ion implantation of impurity ions into silicide layers and subsequent drive‐in

Journal of Applied Physics ◽

10.1063/1.338333 ◽

1987 ◽

Vol 61 (11) ◽

pp. 5084-5088 ◽

Cited By ~ 52

Author(s):

D. L. Kwong ◽

Y. H. Ku ◽

S. K. Lee ◽

E. Louis ◽

N. S. Alvi ◽

...

Keyword(s):

Ion Implantation ◽

Shallow Junction ◽

Junction Formation ◽

Impurity Ions

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Shallow junction formation by plasma immersion ion implantation

Surface and Coatings Technology ◽

10.1016/s0257-8972(97)00055-8 ◽

1997 ◽

Vol 93 (2-3) ◽

pp. 254-257 ◽

Cited By ~ 19

Author(s):

Jiqun Shao ◽

Erin C. Jones ◽

Nathan W. Cheung

Keyword(s):

Ion Implantation ◽

Shallow Junction ◽

Junction Formation ◽

Plasma Immersion Ion Implantation

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Boron ion implantation through Mo and Mo silicide layers for shallow junction formation

Journal of Applied Physics ◽

10.1063/1.348457 ◽

1991 ◽

Vol 69 (7) ◽

pp. 3962-3967 ◽

Cited By ~ 6

Author(s):

R. Angelucci ◽

S. Solmi ◽

A. Armigliato ◽

S. Guerri ◽

M. Merli ◽

...

Keyword(s):

Ion Implantation ◽

Shallow Junction ◽

Junction Formation

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