Photoreflectance study of surface Fermi level in molecular beam epitaxial grown InAlAs heterostructures

1994 ◽  
Vol 64 (24) ◽  
pp. 3314-3316 ◽  
Author(s):  
J. S. Hwang ◽  
S. L. Tyan ◽  
W. Y. Chou ◽  
M. L. Lee ◽  
David Weyburne ◽  
...  
Keyword(s):  
Fermi Level ◽  
Molecular Beam ◽  
Molecular Beam Epitaxial ◽  
Surface Fermi Level

Fermi level pinning in low‐temperature molecular beam epitaxial GaAs

1992 ◽  
Vol 61 (13) ◽  
pp. 1585-1587 ◽  
Author(s):  
H. Shen ◽  
F. C. Rong ◽  
R. Lux ◽  
J. Pamulapati ◽  
M. Taysing‐Lara ◽  
...  
Keyword(s):  
Low Temperature ◽  
Fermi Level ◽  
Molecular Beam ◽  
Epitaxial Gaas ◽  
Fermi Level Pinning ◽  
Molecular Beam Epitaxial

Surface Fermi level in GaAsSb structures grown by molecular beam epitaxy on InP substrates

2008 ◽  
Vol 93 (4) ◽  
pp. 041913 ◽  
Author(s):  
Houssam Chouaib ◽  
Catherine Bru-Chevallier ◽  
Aleksandra Apostoluk ◽  
Wojciech Rudno-Rudzinski ◽  
Melania Lijadi ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Fermi Level ◽  
Molecular Beam ◽  
Inp Substrates ◽  
Surface Fermi Level

Photoreflectance Study of Strained InAIAs/InP Structures

1995 ◽  
Vol 379 ◽  
Author(s):  
Jenn-Shyong Hwang ◽  
W. Y. Chou ◽  
S. L. Tyan ◽  
Y. C. Wang ◽  
J. H. Tung
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electric Field ◽  
Fermi Level ◽  
Layer Thickness ◽  
Surface Potential ◽  
Molecular Beam ◽  
Surface States ◽  
Energy Band Gap ◽  
Characteristic Region ◽  
Surface Fermi Level

ABSTRACTWe have studied the photoreflectance spectra at 300 K from a series of strained In1−xAlxAs/InP (0.42<x<0.57) strained structures grown by molecular beam epitaxy. From the observed Franz-Keldysh Oscillation we evaluate the built-in de electric field and hence the surface potential under different strain. We found that the surface Fermi level is not pinned at midgap under different strainwhich results in contrast to AIGaAs and GaAs. In addition, from the observed dependence of the built-in electric field Fdc and surface potential barrier Vm on the top layer thickness, we conclude that the surface states are distributed over two separate regions within the energy band gap under different strain and the densities of the surface states are as low as (2,71α0.05)x 1011 cm−2 for the distribution near the conduction band and (4.29α0.05)x1011 cm-2 for the distribution near the valence band. The Fermi level is weakly pinned while the top layer thickness is within the characteristic region of each sample.

Effect of annealing on Fermi level pinning of low-temperature molecular-beam epitaxial GaAs

1992 ◽  
Author(s):  
Hongen Shen ◽  
Jagadeesh Pamulapati ◽  
Robert A. Lux ◽  
Mitra B. Dutta ◽  
F. C. Rong ◽  
...  
Keyword(s):  
Low Temperature ◽  
Fermi Level ◽  
Molecular Beam ◽  
Epitaxial Gaas ◽  
Fermi Level Pinning ◽  
Molecular Beam Epitaxial

Magnetic anisotropy and microstructure in molecular beam epitaxial FePt (110)/MgO (110)

1998 ◽  
Vol 84 (2) ◽  
pp. 934-939 ◽  
Author(s):  
R. F. C. Farrow ◽  
D. Weller ◽  
R. F. Marks ◽  
M. F. Toney ◽  
David J. Smith ◽  
...  
Keyword(s):  
Magnetic Anisotropy ◽  
Molecular Beam ◽  
Molecular Beam Epitaxial

Molecular-beam-epitaxial growth of Ga1−xInxSb on GaAs substrates

1997 ◽  
Vol 175-176 ◽  
pp. 883-887 ◽  
Author(s):  
J.H. Roslund ◽  
O. Zsebők ◽  
G. Swenson ◽  
T.G. Andersson
Keyword(s):  
Epitaxial Growth ◽  
Molecular Beam ◽  
Molecular Beam Epitaxial ◽  
Gaas Substrates ◽  
Molecular Beam Epitaxial Growth
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