Surface Fermi level in GaAsSb structures grown by molecular beam epitaxy on InP substrates

2008 ◽  
Vol 93 (4) ◽  
pp. 041913 ◽  
Author(s):  
Houssam Chouaib ◽  
Catherine Bru-Chevallier ◽  
Aleksandra Apostoluk ◽  
Wojciech Rudno-Rudzinski ◽  
Melania Lijadi ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Fermi Level ◽  
Molecular Beam ◽  
Inp Substrates ◽  
Surface Fermi Level

Photoreflectance Study of Strained InAIAs/InP Structures

1995 ◽  
Vol 379 ◽  
Author(s):  
Jenn-Shyong Hwang ◽  
W. Y. Chou ◽  
S. L. Tyan ◽  
Y. C. Wang ◽  
J. H. Tung
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electric Field ◽  
Fermi Level ◽  
Layer Thickness ◽  
Surface Potential ◽  
Molecular Beam ◽  
Surface States ◽  
Energy Band Gap ◽  
Characteristic Region ◽  
Surface Fermi Level

ABSTRACTWe have studied the photoreflectance spectra at 300 K from a series of strained In1−xAlxAs/InP (0.42<x<0.57) strained structures grown by molecular beam epitaxy. From the observed Franz-Keldysh Oscillation we evaluate the built-in de electric field and hence the surface potential under different strain. We found that the surface Fermi level is not pinned at midgap under different strainwhich results in contrast to AIGaAs and GaAs. In addition, from the observed dependence of the built-in electric field Fdc and surface potential barrier Vm on the top layer thickness, we conclude that the surface states are distributed over two separate regions within the energy band gap under different strain and the densities of the surface states are as low as (2,71α0.05)x 1011 cm−2 for the distribution near the conduction band and (4.29α0.05)x1011 cm-2 for the distribution near the valence band. The Fermi level is weakly pinned while the top layer thickness is within the characteristic region of each sample.

Growth by molecular‐beam epitaxy and characterization of (InAs)m(GaAs)mshort period superlattices on InP substrates

1990 ◽  
Vol 68 (3) ◽  
pp. 1282-1286 ◽  
Author(s):  
Hideo Toyoshima ◽  
Takayoshi Anan ◽  
Kenichi Nishi ◽  
Toshinari Ichihashi ◽  
Akihiko Okamoto
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Inp Substrates

Molecular beam epitaxy technology for selective area embedded InGaAs layers in InP substrates

1993 ◽  
Author(s):  
Alexandros Georgakilas ◽  
Aristos Christou ◽  
K. Zekentes ◽  
K. Tsagaraki ◽  
G. Halkias ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Selective Area ◽  
Inp Substrates

Super-flat interfaces in In0.53Ga0.47As/In0.52Al0.48As quantum wells grown on (411)A InP substrates by molecular beam epitaxy

1998 ◽  
Vol 27 (9) ◽  
pp. 1043-1046 ◽  
Author(s):  
Takahiro Kitada ◽  
Tatsuya Saeki ◽  
Masanobu Ohashi ◽  
Satoshi Shimomura ◽  
Akira Adachi ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Inp Substrates

Accurate control of Sb composition in AlGaAsSb alloys on InP substrates by molecular beam epitaxy

2000 ◽  
Vol 208 (1-4) ◽  
pp. 113-116 ◽  
Author(s):  
G Almuneau ◽  
E Hall ◽  
S Mathis ◽  
L.A Coldren
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Inp Substrates
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