Electron beam induced current and cathodoluminescence imaging of the antiphase domain boundaries in GaAs grown on Si

1990 ◽  
Vol 56 (4) ◽  
pp. 376-378 ◽  
Author(s):  
K. Nauka ◽  
G. A. Reid ◽  
Z. Liliental‐Weber
Keyword(s):  
Electron Beam ◽  
Antiphase Domain ◽  
Induced Current ◽  
Domain Boundaries ◽  
Electron Beam Induced Current ◽  
Cathodoluminescence Imaging

Electron beam-induced current imaging of antiphase domain boundaries in heteroepitaxial GaAs on group IV semiconductors

1990 ◽  
Vol 48 (4) ◽  
pp. 746-747
Author(s):  
D.P. Malta ◽  
J.B. Posthill ◽  
R. Venkatasubramanian ◽  
M.L. Timmons ◽  
T.P. Humphreys ◽  
...  
Keyword(s):  
Electron Beam ◽  
Defect Density ◽  
High Mobility ◽  
Antiphase Domain ◽  
Group Iv ◽  
Induced Current ◽  
Bulk Gaas ◽  
Group Iv Semiconductors ◽  
Domain Boundaries ◽  
Electron Beam Induced Current

A viable GaAs heteroepitaxy technology is desirable in order to exploit the high mobility and direct band gap properties of GaAs while avoiding the high cost, defect density, and weight of bulk GaAs. Microstructural defects such as dislocations, microtwins, and stacking faults found in most heteroepitaxial GaAs films have thus far inhibited the achievement of device quality films. In addition, the formation of antiphase domain boundaries (APBs), at which As-As bonds and Ga-Ga bonds exist, is undesirable because they are electrically active. The APBs are believed to form due to the presence of single atomic steps on the underlying group IV substrate. Transmission electron microscopy investigations have previously reported the presence of APBs in GaAs heteroepitaxial films. Since the APBs act as electron-hole recombination sites, the electron beam-induced current. (EBIC) imaging mode of the scanning electron microscope (SEM) is ideally suited for straightforward and statistically significant. GaAs heteroepitaxial film evaluation.

scholarly journals Combined SEM Electron-Beam-Induced Current and Cathodoluminescence Imaging and STEM Structural Analysis of GaN Light Emitting Diodes

2006 ◽  
Vol 12 (S02) ◽  
pp. 1514-1515 ◽  
Author(s):  
CM Parish ◽  
CL Progl ◽  
ME Salmon ◽  
PE Russell
Keyword(s):  
Electron Beam ◽  
Structural Analysis ◽  
Light Emitting Diodes ◽  
Induced Current ◽  
Light Emitting ◽  
Electron Beam Induced Current ◽  
Cathodoluminescence Imaging

Extended abstract of a paper presented at Microscopy and Microanalysis 2006 in Chicago, Illinois, USA, July 30 – August 3, 2005

Electron beam induced current study of thin silicon layers on insulator substrate

1990 ◽  
Vol 48 (4) ◽  
pp. 618-619
Author(s):  
A. Buczkowski ◽  
Z. J. Radzimski ◽  
J. C. Russ ◽  
G. A. Rozgonyi
Keyword(s):  
Electron Beam ◽  
Energy Loss ◽  
Beam Energy ◽  
Collection Efficiency ◽  
Silicon Layer ◽  
Depletion Layer ◽  
Incident Electron Energy ◽  
Induced Current ◽  
Electron Hole ◽  
Electron Beam Induced Current

If a thickness of a semiconductor is smaller than the penetration depth of the electron beam, e.g. in silicon on insulator (SOI) structures, only a small portion of incident electrons energy , which is lost in a superficial silicon layer separated by the oxide from the substrate, contributes to the electron beam induced current (EBIC). Because the energy loss distribution of primary beam is not uniform and varies with beam energy, it is not straightforward to predict the optimum conditions for using this technique. Moreover, the energy losses in an ohmic or Schottky contact complicate this prediction. None of the existing theories, which are based on an assumption of a point-like region of electron beam generation, can be used satisfactorily on SOI structures. We have used a Monte Carlo technique which provide a simulation of the electron beam interactions with thin multilayer structures. The EBIC current was calculated using a simple one dimensional geometry, i.e. depletion layer separating electron- hole pairs spreads out to infinity in x- and y-direction. A point-type generation function with location being an actual location of an incident electron energy loss event has been assumed. A collection efficiency of electron-hole pairs was assumed to be 100% for carriers generated within the depletion layer, and inversely proportional to the exponential function of depth with the effective diffusion length as a parameter outside this layer. A series of simulations were performed for various thicknesses of superficial silicon layer. The geometries used for simulations were chosen to match the "real" samples used in the experimental part of this work. The theoretical data presented in Fig. 1 show how significandy the gain decreases with a decrease in superficial layer thickness in comparison with bulk material. Moreover, there is an optimum beam energy at which the gain reaches its maximum value for particular silicon thickness.

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