Raman study of Al0.54In0.46P/GaAs interfaces grown by solid source molecular beam epitaxy

1993 ◽  
Vol 63 (17) ◽  
pp. 2402-2404 ◽  
Author(s):  
F. G. Johnson ◽  
G. W. Wicks
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Raman Study

Raman study of the segregation of GaAs/AlAs heterostructures grown by molecular beam epitaxy

2001 ◽  
Vol 10 (4) ◽  
pp. 587-592 ◽  
Author(s):  
G. Zanelato ◽  
Yu.A. Pusep ◽  
J.C. Galzerani ◽  
D.I. Lubyshev ◽  
P.P. González-Borrero
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Raman Study

Micro‐Raman study on GaAs layers directly grown on (100) Si by molecular beam epitaxy

1992 ◽  
Vol 72 (6) ◽  
pp. 2531-2533 ◽  
Author(s):  
Akira Ito ◽  
Masaya Ichimura ◽  
Akira Usami ◽  
Takao Wada ◽  
Hirayuki Kano
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Raman Study

Raman Study of Epitaxial Ga2Se3Films Grown by Molecular Beam Epitaxy

1992 ◽  
Vol 31 (Part 2, No. 2B) ◽  
pp. L186-L188 ◽  
Author(s):  
Akira Yamada ◽  
Nobuaki Kojima ◽  
Kiyoshi Takahashi ◽  
Tamotsu Okamoto ◽  
Makoto Konagai
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Raman Study

Raman study of defects in a GaAs buffer layer grown by low-temperature molecular beam epitaxy

1990 ◽  
Vol 19 (11) ◽  
pp. 1323-1330 ◽  
Author(s):  
R. S. Berg ◽  
Nergis Mavalvala ◽  
Tracie Steinberg ◽  
F. W. Smith
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Gaas Buffer Layer ◽  
Raman Study

Raman Study of MOMBE and Plasma-MOVPE Grown III-V Layers on Si(100).

1989 ◽  
Vol 160 ◽  
Author(s):  
J. Geurts ◽  
J. Finders ◽  
H. Münder ◽  
M. Kamp ◽  
M. Oehlers ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Raman Scattering ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Vapour Phase ◽  
Vapour Phase Epitaxy ◽  
Metalorganic Vapour Phase Epitaxy ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Raman Study

AbstractThe crystalline quality of the transition region between buffer layer and epilayer in MOMBE (metalorganic molecular beam epitaxy) and plasma-MOVPE (metalorganic vapour phase epitaxy) grown GaAs layers on Si(100) is analysed by Raman scattering with variation of the penetration depth and besides bevel polishing or step etching. The region with considerable lattice imperfections is essentially confined to the original buffer layer.

Defects in Heavily-Doped MBE GaAs

1982 ◽  
Vol 40 ◽  
pp. 442-445
Author(s):  
C.B. Carter ◽  
D.M. DeSimone ◽  
T. Griem ◽  
C.E.C. Wood
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Heavily Doped

Molecular-beam epitaxy (MBE) is potentially an extremely valuable tool for growing III-V compounds. The value of the technique results partly from the ease with which controlled layers of precisely determined composition can be grown, and partly from the ability that it provides for growing accurately doped layers.

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