Raman study of phonon modes and disorder effects in Pb1−xSrxSe alloys grown by molecular beam epitaxy

2006 ◽  
Vol 99 (1) ◽  
pp. 013513 ◽  
Author(s):  
J. Chen ◽  
W. Z. Shen
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Phonon Modes ◽  
Disorder Effects ◽  
Raman Study

Raman study of the segregation of GaAs/AlAs heterostructures grown by molecular beam epitaxy

2001 ◽  
Vol 10 (4) ◽  
pp. 587-592 ◽  
Author(s):  
G. Zanelato ◽  
Yu.A. Pusep ◽  
J.C. Galzerani ◽  
D.I. Lubyshev ◽  
P.P. González-Borrero
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Raman Study

Observation of phonon modes in epitaxial PbTe films grown by molecular beam epitaxy

2007 ◽  
Vol 101 (10) ◽  
pp. 103505 ◽  
Author(s):  
Huizhen Wu ◽  
Chunfang Cao ◽  
Jianxiao Si ◽  
Tianning Xu ◽  
Hanjie Zhang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Phonon Modes

Optical phonon modes in InGaN/GaN dot-in-a-wire heterostructures grown by molecular beam epitaxy

2013 ◽  
Vol 102 (12) ◽  
pp. 121901 ◽  
Author(s):  
J. Titus ◽  
H. P. T. Nguyen ◽  
Z. Mi ◽  
A. G. U. Perera
Keyword(s):  
Molecular Beam Epitaxy ◽  
Optical Phonon ◽  
Molecular Beam ◽  
Phonon Modes

Excitation Wavelength Dependent Raman Scattering in Low and Highly Degenerate InN Films

2004 ◽  
Vol 831 ◽  
Author(s):  
V.M. Naik ◽  
H. Dai ◽  
R. Naik ◽  
D.B. Haddad ◽  
J.S. Thakur ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Raman Scattering ◽  
Excitation Energy ◽  
Raman Spectra ◽  
Molecular Beam ◽  
Optical Bandgap ◽  
Structural Defects ◽  
Excitation Wavelength ◽  
Phonon Modes ◽  
Energy Mode

ABSTRACTThe Raman spectra of low and highly degenerate InN films grown by conventional Molecular Beam Epitaxy (MBE) and Plasma Source Molecular Beam Epitaxy (PSMBE) have been studied using visible (514.5 nm) and near infrared (785 nm) excitation wavelengths. The MBE grown InN films have a low electron carrier concentration, ne < 2.0 × 1019 cm−3, exhibiting an optical bandgap absorption edge of 0.6 to 0.7 eV. On the other hand PSMBE grown InN samples are highly degenerate with ne > 3 × 1020 cm−3 with an observed optical bandgap ranging from 1.5 to 1.9 eV. Raman spectra of low degenerate InN films show sharp E2 and A1(LO) modes whereas spectra of highly degenerate InN films show rather broad features indicating the presence of a large number of structural defects. In the latter samples a resonance enhanced Raman scattering is observed especially with 785 nm excitation energy, where the excitation energy matches the optical energy bandgap. Another interesting observation is that the expected coupled plasmon LO-phonon modes are not detected in these films, rather a phonon mode is observed at the location of the unscreened A1(LO) mode. The observation of unscreened LO-phonon, and the absence of coupled plasmon LO-phonon modes have been attributed to Landau damping of the higher energy mode and coupling of the lower energy mode with the electron-hole pair excitations leading to the emergence of a mode very close to the A1(LO) mode.

Micro‐Raman study on GaAs layers directly grown on (100) Si by molecular beam epitaxy

1992 ◽  
Vol 72 (6) ◽  
pp. 2531-2533 ◽  
Author(s):  
Akira Ito ◽  
Masaya Ichimura ◽  
Akira Usami ◽  
Takao Wada ◽  
Hirayuki Kano
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Raman Study

Raman Study of Epitaxial Ga2Se3Films Grown by Molecular Beam Epitaxy

1992 ◽  
Vol 31 (Part 2, No. 2B) ◽  
pp. L186-L188 ◽  
Author(s):  
Akira Yamada ◽  
Nobuaki Kojima ◽  
Kiyoshi Takahashi ◽  
Tamotsu Okamoto ◽  
Makoto Konagai
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Raman Study

Study of Highly Strained Single InAs−In0.53Ga0.47As Quantum Wells from Phonon Modes by Raman Scattering

1995 ◽  
Vol 379 ◽  
Author(s):  
L. G. Quagliano ◽  
D. Orani ◽  
A. Ricci ◽  
M. G. Simeone ◽  
M. R. Bruni
Keyword(s):  
Raman Spectroscopy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Phonon Mode ◽  
Phonon Modes ◽  
Long Wavelength ◽  
Raman Study ◽  
Highly Strained ◽  
Inp Substrates

ABSTRACTWe report Raman study of highly strained single InAs−In0.53Ga0.47As quantum wells grown by molecular beam epitaxy (MBE) on InP substrates with the well thickness between 4 and 15 monolayers. We have used Raman spectroscopy to characterize quality, disorder and strain of these structures which are of considerable interest for long wavelength optical communications.In the Raman spectra we have observed an intense narrow line corresponding to the GaAslike LO mode of In0.53Ga0.47As cap layer and a narrow peak due to the LO phonon mode of the InAs layer. These dominant and sharp features characterize the high homogeneity of our samples. In addition to these features we have observed the appearance of distinct peaks with the increase of the InAs layer thickness. In our opinion the presence of these modes is indicative of a slight deterioration of the structural perfection of the sample with the increase of the well thickness. Our investigation shows the ability of Raman spectroscopy to describe these systems and the good quality of our structures.

Raman study of defects in a GaAs buffer layer grown by low-temperature molecular beam epitaxy

1990 ◽  
Vol 19 (11) ◽  
pp. 1323-1330 ◽  
Author(s):  
R. S. Berg ◽  
Nergis Mavalvala ◽  
Tracie Steinberg ◽  
F. W. Smith
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Gaas Buffer Layer ◽  
Raman Study
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