Low temperature annealing of ion‐implantation‐induced defects in GaAs by minority carrier injection

1993 ◽  
Vol 63 (18) ◽  
pp. 2525-2527 ◽  
Author(s):  
K. Wada ◽  
H. Nakanishi ◽  
K. Yamada
Keyword(s):  
Low Temperature ◽  
Ion Implantation ◽  
Minority Carrier ◽  
Carrier Injection ◽  
Low Temperature Annealing ◽  
Induced Defects

Low temperature annealing of electron irradiation induced defects in 4H-SiC

2004 ◽  
Vol 85 (17) ◽  
pp. 3780-3782 ◽  
Author(s):  
Antonio Castaldini ◽  
Anna Cavallini ◽  
Lorenzo Rigutti ◽  
Filippo Nava
Keyword(s):  
Low Temperature ◽  
Electron Irradiation ◽  
Low Temperature Annealing ◽  
Induced Defects ◽  
Irradiation Induced Defects

The substitutionality of hafnium in sapphire by ion implantation and low temperature annealing

1996 ◽  
pp. 602-605
Author(s):  
J.G. Marques ◽  
A.A. Melo ◽  
J.C. Soares ◽  
E. Alves ◽  
M.F. da Silva ◽  
...  
Keyword(s):  
Low Temperature ◽  
Ion Implantation ◽  
Low Temperature Annealing

Low temperature annealing of neutron and gamma induced defects in KBr

1968 ◽  
Vol 6 (12) ◽  
pp. 893-897 ◽  
Author(s):  
P.R. Hanley ◽  
A.W. Haberl ◽  
A. Taylor
Keyword(s):  
Low Temperature ◽  
Low Temperature Annealing ◽  
Induced Defects

Minority-Carrier Injection-Enhanced Recovery of Radiation-Induced Defects in n+p AlInGaP Solar Cells

2006 ◽  
Author(s):  
Hae-seok Lee ◽  
Masafumi Yamaguchi ◽  
Nicholas J. Ekins-daukes ◽  
Aurangzeb Khan ◽  
Tatsuya Takamoto ◽  
...  
Keyword(s):  
Solar Cells ◽  
Minority Carrier ◽  
Enhanced Recovery ◽  
Carrier Injection ◽  
Radiation Induced ◽  
Induced Defects

Extended platelets on {111} in GaAs created by He-ion implantation followed by low temperature annealing

1997 ◽  
Vol 71 (2) ◽  
pp. 255-257 ◽  
Author(s):  
T. Nomachi ◽  
S. Muto ◽  
M. Hirata ◽  
H. Kohno ◽  
Jun Yamasaki ◽  
...  
Keyword(s):  
Low Temperature ◽  
Ion Implantation ◽  
Low Temperature Annealing

InGaAsP variable optical attenuator with lateral P-I-N junction formed by Ni-InGaAsP and Zn diffusion on III-V on insulator wafer

MRS Advances ◽  
2016 ◽  
Vol 1 (48) ◽  
pp. 3295-3300 ◽  
Author(s):  
Jin-Kwon Park ◽  
Jae-Hoon Han ◽  
Mitsuru Takenaka ◽  
Shinichi Takagi
Keyword(s):  
Low Temperature ◽  
Ion Implantation ◽  
Current Density ◽  
Direct Reaction ◽  
Carrier Injection ◽  
Zn Diffusion ◽  
Optical Attenuation ◽  
Variable Optical Attenuator ◽  
Low Temperature Process ◽  
Injection Current Density

ABSTRACTIn this study, we successfully demonstrate a carrier-injection InGaAsP variable optical attenuator (VOA) with a lateral P-I-N junction formed by Ni-InGaAsP alloy and Zn diffusion on a III-V on insulator (III-V-OI) wafer. The Ni-InGaAsP alloy for the n+ junction is formed by direct reaction between Ni and InGaAsP after annealing at 350°C. The p+ junction is formed by the Zn diffusion at 500°C using Zn doped spin-on glass (SOG). By both techniques, we successfully reduce the sheet and contact resistivity in the lateral P-I-N junction even with the relatively low-temperature process as compared with the P-I-N junction formed by conventional Si and Be ion implantation. By injecting carriers into the InGaAsP waveguide through the lateral P-I-N junction, we achieve the optical attenuation of -40 dB/mm with an injection current density of 40 mA/mm at a 1.55 μm wavelength.

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