Low temperature annealing of electron irradiation induced defects in 4H-SiC

2004 ◽  
Vol 85 (17) ◽  
pp. 3780-3782 ◽  
Author(s):  
Antonio Castaldini ◽  
Anna Cavallini ◽  
Lorenzo Rigutti ◽  
Filippo Nava
Keyword(s):  
Low Temperature ◽  
Electron Irradiation ◽  
Low Temperature Annealing ◽  
Induced Defects ◽  
Irradiation Induced Defects

Low temperature anneal of electron irradiation induced defects in p type silicon

1998 ◽  
Vol 14 (12) ◽  
pp. 1295-1298 ◽  
Author(s):  
M.-A. Trauwaert ◽  
J. Vanhellemont ◽  
H. E. Maes ◽  
A.-M. Van Bavel ◽  
G. Langouche
Keyword(s):  
Low Temperature ◽  
Electron Irradiation ◽  
Type Silicon ◽  
P Type ◽  
Induced Defects ◽  
Irradiation Induced Defects

Self-annihilation of electron-irradiation-induced defects in InAsxP1−x∕InP multiquantum well solar cells

2007 ◽  
Vol 90 (23) ◽  
pp. 233111 ◽  
Author(s):  
Aurangzeb Khan ◽  
A. Freundlich ◽  
Jihua Gou ◽  
A. Gapud ◽  
M. Imazumi ◽  
...  
Keyword(s):  
Solar Cells ◽  
Electron Irradiation ◽  
Induced Defects ◽  
Irradiation Induced Defects ◽  
Multiquantum Well

Study of Compensation Defects and Electron Irradiation-Induced Defects in Undoped SI-InP by Positron Lifetime Spectroscopy

2008 ◽  
Vol 607 ◽  
pp. 134-136
Author(s):  
Y.J. Zhang ◽  
Ai Hong Deng ◽  
You Wen Zhao ◽  
J. Yu ◽  
X.X. Yu ◽  
...  
Keyword(s):  
Electron Irradiation ◽  
Positron Lifetime ◽  
Deep Level ◽  
High Concentration ◽  
Positron Annihilation Lifetime ◽  
Donor Type ◽  
Positron Lifetime Spectroscopy ◽  
Transient Spectroscopy ◽  
Induced Defects ◽  
Irradiation Induced Defects

Positron annihilation lifetime (PAL) spectroscopy，photo-induced current transient spectroscopy (PICTS) and thermally stimulated current (TSC) have been employed to study the formation of compensation defects and their evolvement under iron phosphide (IP) ambience or pure phosphide (PP) ambience. In the formation of IP SI-InP, the diffusion of Fe atoms suppresses the formation of some open-volume defects. As to PP SI-InP, VInH4 complexes dissociate into acceptor vacancies VInHn(n-3)(n=0,1,2,3), which compensate residual donor type defects and make the sample semi-insulating. Electron irradiation-induced deep level defects have been studied by TSC in PP and IP SI-InP, respectively. In contrast to a high concentration of irradiation-induced defects in as-grown and PP annealed InP, IP SI-InP has a very low concentration of defects.

Electron irradiation‐activated low‐temperature annealing of phosphorus‐implanted silicon

1986 ◽  
Vol 48 (17) ◽  
pp. 1132-1134 ◽  
Author(s):  
M. Miyao ◽  
A. Polman ◽  
W. Sinke ◽  
F. W. Saris ◽  
R. van Kemp
Keyword(s):  
Low Temperature ◽  
Electron Irradiation ◽  
Low Temperature Annealing

Comparative Results of Low Temperature Annealing of Lightly Doped N-Layers of Silicon Carbide Irradiated by Protons and Electrons

2020 ◽  
Vol 1004 ◽  
pp. 231-236
Author(s):  
Vitalii V. Kozlovski ◽  
Oleg Korolkov ◽  
Alexander A. Lebedev ◽  
Jana Toompuu ◽  
Natalja Sleptsuk
Keyword(s):  
Low Temperature ◽  
Conduction Band ◽  
Electron Irradiation ◽  
Proton Irradiation ◽  
Schottky Diodes ◽  
Differential Resistance ◽  
Charge Carriers ◽  
Low Temperature Annealing ◽  
Current Voltage ◽  
Comparative Results

The influence of low-temperature (up to 400°С) annealing on the current-voltage and capacitance–voltage characteristics of Schottky diodes irradiated with protons with an energy of 15 MeV compared with the results of annealing of structures after irradiation with electrons with an energy of 0.9 MeV has been studied. It was shown that in case of proton irradiation with a dose of 4E13 cm-2 and electron irradiation with a dose of 1E16 cm-2, only partial carrier compensation occurs and the differential resistance is completely determined by the number of carriers in the epitaxial layer. The irradiation method has almost no effect on the direct current dependence on the voltage in the exponential segment. The ideality coefficient remains almost unchanged within 1.03 ÷ 1.04. During annealing after proton irradiation, a large activation energy of the process is required. The temperature of the beginning of annealing process during proton irradiation shifts to a larger value, from 150 °C to 250 °C when compared with electron irradiation. It has been demonstrated that at low doses of proton irradiation, the low-temperature annealing leads to the return to the conduction band of up to 65% of the removed charge carriers. After electron irradiation, low-temperature annealing returns up to 90% of the removed charge carriers to the conduction band. This indicates that at room temperature both proton irradiation as well as electron irradiation introduce both stable and unstable defects but in different proportions.

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