Extended platelets on {111} in GaAs created by He-ion implantation followed by low temperature annealing

1997 ◽  
Vol 71 (2) ◽  
pp. 255-257 ◽  
Author(s):  
T. Nomachi ◽  
S. Muto ◽  
M. Hirata ◽  
H. Kohno ◽  
Jun Yamasaki ◽  
...  
Keyword(s):  
Low Temperature ◽  
Ion Implantation ◽  
Low Temperature Annealing

The substitutionality of hafnium in sapphire by ion implantation and low temperature annealing

1996 ◽  
pp. 602-605
Author(s):  
J.G. Marques ◽  
A.A. Melo ◽  
J.C. Soares ◽  
E. Alves ◽  
M.F. da Silva ◽  
...  
Keyword(s):  
Low Temperature ◽  
Ion Implantation ◽  
Low Temperature Annealing

Correlation between Current Transport and Defects in n+/p 6H-SiC Diodes

2006 ◽  
Vol 527-529 ◽  
pp. 811-814 ◽  
Author(s):  
Mariaconcetta Canino ◽  
Antonio Castaldini ◽  
Anna Cavallini ◽  
Francesco Moscatelli ◽  
Roberta Nipoti ◽  
...  
Keyword(s):  
Low Temperature ◽  
Ion Implantation ◽  
Transport Properties ◽  
Current Transport ◽  
Step Bunching ◽  
Excess Current ◽  
Low Temperature Annealing ◽  
Current Voltage ◽  
P Type

This paper reports on the defects created in a 6H-SiC p-type substrate by a process of ion implantation and a quite low temperature annealing (1300 °C), suitable for the realization of the source/drain regions of a MOSFET because it does not give rise to step bunching phenomena. Current voltage measurements showed the presence of a group of diodes featured by excess current. The effects of defects under the implanted layer on the transport properties of the diodes were investigated by DLTS: four hole traps were detected in all the measured diodes; besides, a broadened peak around 550 K was detected in the diodes that show excess current.

Impurity Contamination and Diffusion during Annealing in Implanted ZnO

2008 ◽  
Vol 388 ◽  
pp. 23-26 ◽  
Author(s):  
Isao Sakaguchi ◽  
Yutaka Adachi ◽  
Takeshi Ogaki ◽  
Kenji Matsumoto ◽  
Shunichi Hishita ◽  
...  
Keyword(s):  
Low Temperature ◽  
Ion Implantation ◽  
Diffusion Coefficients ◽  
Impurity Diffusion ◽  
Low Temperature Annealing ◽  
Impurity Contamination ◽  
And Diffusion ◽  
Zno Ceramics ◽  
Good Agreement

The effect of ion implantation leading to contamination and diffusion of lithium impurity in ZnO ceramics substrates was investigated. The diffusion coefficients of Li in the implanted ZnO annealed at 1000 and 850°C were in good agreement with those in the non-implanted ZnO. At 700°C, Li diffusion in the implanted ZnO was strongly enhanced. Our results show that the defects introduced by the implantation enhance the impurity diffusion at low temperature annealing.

Low-temperature annealing of YBa2Cu3O7-x

1992 ◽  
Vol 50 (1) ◽  
pp. 88-89
Author(s):  
R.L. Sabatini ◽  
Yimei Zhu ◽  
Masaki Suenaga ◽  
A.R. Moodenbaugh
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Low Temperature ◽  
Oxygen Diffusion ◽  
Diffusion Rate ◽  
Oxygen Depletion ◽  
Low Temperature Annealing ◽  
Transmission Electron ◽  
Microstructural Effects ◽  
Oxygen Diffusion Rate

Low temperature annealing (<400°C) of YBa2Cu3O7x in a ozone containing oxygen atmosphere is sometimes carried out to oxygenate oxygen deficient thin films. Also, this technique can be used to fully oxygenate thinned TEM specimens when oxygen depletion in thin regions is suspected. However, the effects on the microstructure nor the extent of oxygenation of specimens has not been documented for specimens exposed to an ozone atmosphere. A particular concern is the fact that the ozone gas is so reactive and the oxygen diffusion rate at these temperatures is so slow that it may damage the specimen by an over-reaction. Thus we report here the results of an investigation on the microstructural effects of exposing a thinned YBa2Cu3O7-x specimen in an ozone atmosphere using transmission electron microscopy and energy loss spectroscopy techniques.

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