Photoluminescence of high‐quality SiGe quantum wells grown by molecular beam epitaxy

1993 ◽  
Vol 63 (3) ◽  
pp. 376-378 ◽  
Author(s):  
M. Wachter ◽  
F. Schäffler ◽  
H.‐J. Herzog ◽  
K. Thonke ◽  
R. Sauer
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
High Quality ◽  
Sige Quantum Wells

High quality quantum wells of InGaP/GaAs grown by molecular beam epitaxy

1989 ◽  
Vol 54 (26) ◽  
pp. 2686-2688 ◽  
Author(s):  
M. J. Hafich ◽  
J. H. Quigley ◽  
R. E. Owens ◽  
G. Y. Robinson ◽  
Du Li ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
High Quality

High-quality GaNAs∕GaAs quantum wells with light emission up to 1.44μm grown by molecular-beam epitaxy

2005 ◽  
Vol 87 (14) ◽  
pp. 141913 ◽  
Author(s):  
S. M. Wang ◽  
Q. F. Gu ◽  
Y. Q. Wei ◽  
M. Sadeghi ◽  
A. Larsson ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Light Emission ◽  
High Quality

High quality In0.2Ga0.8As/AlxGa1−xAs (x=0−0.32) strained single quantum wells grown by molecular beam epitaxy

1993 ◽  
Vol 62 (2) ◽  
pp. 190-192 ◽  
Author(s):  
Toshiro Hayakawa ◽  
Hideyoshi Horie ◽  
Masaharu Nagai ◽  
Yoshihisa Niwata
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Single Quantum ◽  
High Quality
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