High quality In0.2Ga0.8As/AlxGa1−xAs (x=0−0.32) strained single quantum wells grown by molecular beam epitaxy

1993 ◽  
Vol 62 (2) ◽  
pp. 190-192 ◽  
Author(s):  
Toshiro Hayakawa ◽  
Hideyoshi Horie ◽  
Masaharu Nagai ◽  
Yoshihisa Niwata
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Single Quantum ◽  
High Quality

scholarly journals Formation of long single quantum dots in high quality InSb nanowires grown by molecular beam epitaxy

Nanoscale ◽  
2015 ◽  
Vol 7 (36) ◽  
pp. 14822-14828 ◽  
Author(s):  
Dingxun Fan ◽  
Sen Li ◽  
N. Kang ◽  
Philippe Caroff ◽  
L. B. Wang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electron Transport ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Single Electron ◽  
Single Quantum ◽  
High Quality ◽  
Single Quantum Dots ◽  
Single Electron Transport ◽  
Insb Nanowires

Single electron transport is demonstrated in high-quality MBE-grown InSb nanowire single quantum dots with a dot length up to ∼700 nm.

High quality quantum wells of InGaP/GaAs grown by molecular beam epitaxy

1989 ◽  
Vol 54 (26) ◽  
pp. 2686-2688 ◽  
Author(s):  
M. J. Hafich ◽  
J. H. Quigley ◽  
R. E. Owens ◽  
G. Y. Robinson ◽  
Du Li ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
High Quality
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