Molecular-beam epitaxy growth of high-quality active regions with strained InxGa1−xAs quantum wells and lattice-matched AlxGayIn(1−x−y)As barriers using submonolayer superlattices

2002 ◽  
Vol 80 (19) ◽  
pp. 3509-3511 ◽  
Author(s):  
M. H. M. Reddy ◽  
A. Huntington ◽  
D. Buell ◽  
R. Koda ◽  
E. Hall ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Active Regions ◽  
Molecular Beam Epitaxy Growth ◽  
High Quality ◽  
Lattice Matched

Molecular beam epitaxy growth and characterization of low-temperature InGaAs/InAlAs multiple quantum wells

2013 ◽  
Vol 25 (6) ◽  
pp. 1523-1526
Author(s):  
万文坚 Wan Wenjian ◽  
尹嵘 Yin Rong ◽  
韩英军 Han Yingjun ◽  
王丰 Wang Feng ◽  
郭旭光 Guo Xuguang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Multiple Quantum Wells ◽  
Molecular Beam Epitaxy Growth ◽  
Multiple Quantum
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