Preparation of molecular-beam epitaxy growth high-quality GaAs–AlGaAs quantum wells and their properties investigation

Y. H. Huang

doi:10.1116/1.584378

Preparation of molecular-beam epitaxy growth high-quality GaAs–AlGaAs quantum wells and their properties investigation

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.584378 ◽

1988 ◽

Vol 6 (2) ◽

pp. 644

Author(s):

Y. H. Huang

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Wells ◽

Molecular Beam ◽

Molecular Beam Epitaxy Growth ◽

High Quality

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Molecular-beam epitaxy growth of high-quality active regions with strained InxGa1−xAs quantum wells and lattice-matched AlxGayIn(1−x−y)As barriers using submonolayer superlattices

Applied Physics Letters ◽

10.1063/1.1474598 ◽

2002 ◽

Vol 80 (19) ◽

pp. 3509-3511 ◽

Cited By ~ 12

Author(s):

M. H. M. Reddy ◽

A. Huntington ◽

D. Buell ◽

R. Koda ◽

E. Hall ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Wells ◽

Molecular Beam ◽

Active Regions ◽

Molecular Beam Epitaxy Growth ◽

High Quality ◽

Lattice Matched

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Molecular beam epitaxy growth and characterization of broken-gap (type II) superlattices and quantum wells for midwave-infrared laser diodes

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.591440 ◽

2000 ◽

Vol 18 (3) ◽

pp. 1623 ◽

Cited By ~ 4

Author(s):

T. C. Hasenberg ◽

P. S. Day ◽

E. M. Shaw ◽

D. J. Magarrell ◽

J. T. Olesberg ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Wells ◽

Molecular Beam ◽

Laser Diodes ◽

Infrared Laser ◽

Molecular Beam Epitaxy Growth ◽

Type Ii ◽

Midwave Infrared ◽

Broken Gap

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Molecular beam epitaxy growth of GaInNAs(Sb) double quantum wells with bright and narrow photoluminescence

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2006.02.027 ◽

2006 ◽

Vol 291 (1) ◽

pp. 86-93 ◽

Cited By ~ 25

Author(s):

J.A. Gupta ◽

G.I. Sproule ◽

X. Wu ◽

Z.R. Wasilewski

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Wells ◽

Molecular Beam ◽

Molecular Beam Epitaxy Growth ◽

Double Quantum

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Molecular beam epitaxy growth and characterization of low-temperature InGaAs/InAlAs multiple quantum wells

High Power Laser and Particle Beams ◽

10.3788/hplpb20132506.1523 ◽

2013 ◽

Vol 25 (6) ◽

pp. 1523-1526

Author(s):

万文坚 Wan Wenjian ◽

尹嵘 Yin Rong ◽

韩英军 Han Yingjun ◽

王丰 Wang Feng ◽

郭旭光 Guo Xuguang ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Low Temperature ◽

Quantum Wells ◽

Molecular Beam ◽

Multiple Quantum Wells ◽

Molecular Beam Epitaxy Growth ◽

Multiple Quantum

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Growth and characterisation of high quality GaInP/AlGaInP quantum wells by solid-source molecular beam epitaxy

Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM) ◽

10.1109/iciprm.1994.328291 ◽

2002 ◽

Cited By ~ 1

Author(s):

M. Hopkinson ◽

J.P.R. David ◽

O.P. Kowalski ◽

D.J. Mowbray ◽

M.S. Skolnick

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Wells ◽

Molecular Beam ◽

High Quality

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Molecular beam epitaxy growth of AlGaN quantum wells on 6H-SiC substrates with high internal quantum efficiency

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3678208 ◽

2012 ◽

Vol 30 (2) ◽

pp. 02B119 ◽

Cited By ~ 20

Author(s):

Wei Zhang ◽

A. Yu. Nikiforov ◽

C. Thomidis ◽

J. Woodward ◽

H. Sun ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Wells ◽

Quantum Efficiency ◽

Molecular Beam ◽

Internal Quantum Efficiency ◽

Molecular Beam Epitaxy Growth

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Molecular beam epitaxy of high-quality, nonstoichiometric multiple quantum wells

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.588917 ◽

1996 ◽

Vol 14 (3) ◽

pp. 2271 ◽

Cited By ~ 8

Author(s):

M. R. Melloch

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Wells ◽

Molecular Beam ◽

Multiple Quantum Wells ◽

Multiple Quantum ◽

High Quality

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Molecular-beam epitaxy growth of high-quality two-dimensional electron system

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.584757 ◽

1989 ◽

Vol 7 (2) ◽

pp. 388

Author(s):

M. Shayegan

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Electron System ◽

Molecular Beam Epitaxy Growth ◽

Two Dimensional ◽

Dimensional Electron ◽

High Quality ◽

Dimensional Electron System

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Molecular Beam Epitaxy Growth of High-Quality Linear Arrays of InGaAs Ridge Quantum Wires with Nanometer Wire Widths and Submicron Wire Pitches on Patterned InP Substrates

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.972 ◽

2002 ◽

Vol 41 (Part 1, No. 2B) ◽

pp. 972-976 ◽

Cited By ~ 6

Author(s):

Chao Jiang ◽

Hideki Hasegawa

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Quantum Wires ◽

Molecular Beam Epitaxy Growth ◽

High Quality ◽

Linear Arrays ◽

Inp Substrates

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Molecular beam epitaxy growth and photoluminescence study of room temperature 1.31μm (InyGa1−yAs/GaAs1−x Sbx)/GaAs bilayer quantum wells

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2004.12.102 ◽

2005 ◽

Vol 278 (1-4) ◽

pp. 558-563 ◽

Cited By ~ 3

Author(s):

Z.C. Niu ◽

X.H. Xu ◽

H.Q. Ni ◽

Y.Q. Xu ◽

Z.H. He ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Wells ◽

Room Temperature ◽

Molecular Beam ◽

Molecular Beam Epitaxy Growth ◽

Photoluminescence Study

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