Low‐temperature migration enhanced epitaxy of base material for AlGaAs/GaAs heterojunction bipolar transistors

1993 ◽  
Vol 63 (6) ◽  
pp. 809-811 ◽  
Author(s):  
Kai Zhang ◽  
Der‐Woei Wu ◽  
Jianming Fu ◽  
D. L. Miller ◽  
Mike Fukuda ◽  
...  
Keyword(s):  
Low Temperature ◽  
Heterojunction Bipolar Transistors ◽  
Base Material ◽  
Bipolar Transistors ◽  
Migration Enhanced Epitaxy

Base-emitter injection characterization in low-temperature pseudo-heterojunction bipolar transistors

1990 ◽  
Vol 37 (10) ◽  
pp. 2222-2229 ◽  
Author(s):  
K. Yano ◽  
K. Nakazato ◽  
M. Miyamoto ◽  
M. Aoki ◽  
K. Shimohigashi
Keyword(s):  
Low Temperature ◽  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors

Tri-Layer Lift-off Metallization Process Using Low Temperature Deposited SiNx

1992 ◽  
Vol 282 ◽  
Author(s):  
J. R. Lothian ◽  
F. Ren ◽  
S. J. Pearton ◽  
U. K. Chakrabarti ◽  
C. R. Abernathy ◽  
...  
Keyword(s):  
Low Temperature ◽  
Heterojunction Bipolar Transistors ◽  
Electron Cyclotron Resonance ◽  
Bipolar Transistors ◽  
Base Layer ◽  
Lithographic Patterning ◽  
Final Stress ◽  
Lift Off ◽  
High Yields ◽  
Metallization Process

ABSTRACTA tri-level resist scheme using low temperature (<50°C) deposited SiNx ratfier than Ge for the transfer layer has been developed. This allows use of an optical stepper for lithographic patterning of the emitter-base junctions in GaAs/AlGaAs heterojunction bipolar transistors (HBTs) where a conventional lift-off process using a single level resist often leads to die presence of shorts between metallizations. The plasma-enhanced chemically vapor deposited (PECVD) SiNx shows a sligtly larger degree of Si-H bonding compared to nitride deposited at higher temperature (275°C), and is under compressive stress (-5 × 1010 dyne · cm−2) which is considerably relieved upor thermal cycling to 500°C (-1.5 × 1010 dyne · cm−2 after cool-down). This final stress is approximately a factor of two higher man conventional PECVD SiNx cycled in the same manner. The adhesion of the low temperature nitride to die underlying polydimediylglutarimide (PMGI) base layer in the tri-level resist is excellent, leading to high yields in the lift-off metallization process. These layers are etched in Electron Cyclotron Resonance (ECR) discharges of SF6 or O2, respectively, using low additional dc bias (≤-100V) on the sample. Subsequent deposition of the HBT base metallization (Ti/Ag/Au) and lift-off of the tri-level resist produces contacts with excellent edge definition and an absence of shorts between metallization.

Evaluation of Silicon Carbide Formed with a Single Precursor of Di-Tert-Butylsilane

1992 ◽  
Vol 242 ◽  
Author(s):  
Sing-Pin Tay ◽  
J. P. Ellul ◽  
Susan B. Hewitt ◽  
N. G. Tarr ◽  
A. R. Boothroyd
Keyword(s):  
Silicon Carbide ◽  
Low Temperature ◽  
Amorphous Silicon ◽  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Amorphous Silicon Carbide ◽  
Single Precursor ◽  
C Doping ◽  
Low Temperature Process

ABSTRACTA low temperature process of silicon carbide deposition using the pyrolysis of di-tert-butylsilane has been explored for formation of emitter structures in silicon heterojunction bipolar transistors. Near stoichiometric amorphous silicon carbide films were achieved at 775°C. Doping and annealing of these films resulted in resistivity as low as 0.02 ohm-cm.

Static Performance of SiGe HBTs at Low Temperature

2014 ◽  
Vol 666 ◽  
pp. 59-63
Author(s):  
Maya Lakhdara ◽  
Saϊda Latreche ◽  
Christian Gontrand
Keyword(s):  
Low Temperature ◽  
Heterojunction Bipolar Transistors ◽  
High Performance ◽  
Industrial Process ◽  
Bipolar Transistors ◽  
Fundamental Aspect ◽  
Cryogenic Temperatures ◽  
Sige Hbt ◽  
Static Performance ◽  
The Impact

—This paper analyse is the impact of cryogenic temperatures for SiGe Heterojunction Bipolar Transistors (HBTs) base, realised in BiCMOS9 0.13μm industrial process. The use of these components in microwaves applications exposed to various temperatures is fundamental aspect to predict in precise way its electric characteristics. This paper investigates the temperature dependence from (170 K to 300 K) of DC, for NPN SiGe heterojunction bipolar transistors (HBTs) and notably modeling high performance Si/SiGe HBT for telecommunication and radar detection (>0.5THz) in low temperature (cryogenic temperature).

High-frequency characteristics of low-temperature pseudo-heterojunction bipolar transistors

1993 ◽  
Vol 40 (2) ◽  
pp. 378-384 ◽  
Author(s):  
M. Miyamoto ◽  
K. Yano ◽  
Y. Tamaki ◽  
M. Aoki ◽  
T. Nishida ◽  
...  
Keyword(s):  
Low Temperature ◽  
Heterojunction Bipolar Transistors ◽  
High Frequency ◽  
Bipolar Transistors ◽  
Frequency Characteristics

Implant-induced strain-relaxation in SiGe/Si layers

1993 ◽  
Vol 51 ◽  
pp. 1112-1113
Author(s):  
N. David Theodore ◽  
Gordon Tam
Keyword(s):  
Integrated Circuits ◽  
Heterojunction Bipolar Transistors ◽  
High Speed ◽  
High Performance ◽  
Strain Relaxation ◽  
Base Material ◽  
Sige Layer ◽  
Bipolar Transistors ◽  
Leakage Currents ◽  
Extrinsic Base

SiGe is being extensively investigated for use in heterojunction bipolar-transistors (HBT) and high-speed integrated circuits. SiGe is typically used as an epitaxial base material in HBTs. To obtain extremely high-performance bipolar-transistors it is necessary to reduce the extrinsic base-resistance. This can be done by increasing the base-doping or by widening the base link-region by ion implantation. A problem that arises however with the use of implantation is that blanket implants have been found to enhance strain-relaxation of SiGe/Si. Strain relaxation will cause the bandgap-difference between Si and SiGe to decrease; this difference is maximum for a strained SiGe layer. The electrical benefits of using SiGe/Si arise largely from the presence of a significant bandgap-difference across the SiGe/Si interface. Strain relaxation reduces this benefit. Furthermore, once misfit or threading dislocations result (during strain-relaxation), the defects can give rise to recombination-generation in depletion regions of the device; high electrical leakage currents result.

Arsenic-doped Ge-spiked monoemitter SiGe:C heterojunction bipolar transistors by low-temperature trisilane based chemical vapor deposition

2012 ◽  
Vol 520 (8) ◽  
pp. 3345-3348
Author(s):  
Shuzhen You ◽  
Stefaan Decoutere ◽  
Ngoc Duy Nguyen ◽  
Stefaan Van Huylenbroeck ◽  
Arturo Sibaja-Hernandez ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Heterojunction Bipolar Transistors ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Bipolar Transistors
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