Evaluation of Silicon Carbide Formed with a Single Precursor of Di-Tert-Butylsilane

1992 ◽  
Vol 242 ◽  
Author(s):  
Sing-Pin Tay ◽  
J. P. Ellul ◽  
Susan B. Hewitt ◽  
N. G. Tarr ◽  
A. R. Boothroyd
Keyword(s):  
Silicon Carbide ◽  
Low Temperature ◽  
Amorphous Silicon ◽  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Amorphous Silicon Carbide ◽  
Single Precursor ◽  
C Doping ◽  
Low Temperature Process

ABSTRACTA low temperature process of silicon carbide deposition using the pyrolysis of di-tert-butylsilane has been explored for formation of emitter structures in silicon heterojunction bipolar transistors. Near stoichiometric amorphous silicon carbide films were achieved at 775°C. Doping and annealing of these films resulted in resistivity as low as 0.02 ohm-cm.

Characteristics of Silicon Nanocrystals Embedded in the Amorphous-Silicon Carbide Films Deposited by Cat-CVD at Low Temperature for Optoelectronics Applications

2019 ◽  
Vol 25 (10) ◽  
pp. 105-109 ◽  
Author(s):  
Jae-Dam Hwang ◽  
Kyoung-Min Lee ◽  
Youn-Jin Lee ◽  
Seunghun Jang ◽  
Moonsup Han ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Low Temperature ◽  
Amorphous Silicon ◽  
Silicon Nanocrystals ◽  
Amorphous Silicon Carbide

Structural relaxation of amorphous silicon carbide thin films in thermal annealing

2008 ◽  
Vol 516 (12) ◽  
pp. 3855-3861 ◽  
Author(s):  
Kun Xue ◽  
Li-Sha Niu ◽  
Hui-Ji Shi ◽  
Jiwen Liu
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Structural Relaxation ◽  
Amorphous Silicon Carbide
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