Tri-Layer Lift-off Metallization Process Using Low Temperature Deposited SiNx

1992 ◽  
Vol 282 ◽  
Author(s):  
J. R. Lothian ◽  
F. Ren ◽  
S. J. Pearton ◽  
U. K. Chakrabarti ◽  
C. R. Abernathy ◽  
...  
Keyword(s):  
Low Temperature ◽  
Heterojunction Bipolar Transistors ◽  
Electron Cyclotron Resonance ◽  
Bipolar Transistors ◽  
Base Layer ◽  
Lithographic Patterning ◽  
Final Stress ◽  
Lift Off ◽  
High Yields ◽  
Metallization Process

ABSTRACTA tri-level resist scheme using low temperature (<50°C) deposited SiNx ratfier than Ge for the transfer layer has been developed. This allows use of an optical stepper for lithographic patterning of the emitter-base junctions in GaAs/AlGaAs heterojunction bipolar transistors (HBTs) where a conventional lift-off process using a single level resist often leads to die presence of shorts between metallizations. The plasma-enhanced chemically vapor deposited (PECVD) SiNx shows a sligtly larger degree of Si-H bonding compared to nitride deposited at higher temperature (275°C), and is under compressive stress (-5 × 1010 dyne · cm−2) which is considerably relieved upor thermal cycling to 500°C (-1.5 × 1010 dyne · cm−2 after cool-down). This final stress is approximately a factor of two higher man conventional PECVD SiNx cycled in the same manner. The adhesion of the low temperature nitride to die underlying polydimediylglutarimide (PMGI) base layer in the tri-level resist is excellent, leading to high yields in the lift-off metallization process. These layers are etched in Electron Cyclotron Resonance (ECR) discharges of SF6 or O2, respectively, using low additional dc bias (≤-100V) on the sample. Subsequent deposition of the HBT base metallization (Ti/Ag/Au) and lift-off of the tri-level resist produces contacts with excellent edge definition and an absence of shorts between metallization.

Prevention of InP/InGaAs/InP Double Heterojunction Bipolar Transistors from Current Gain Reduction during Passivation

2004 ◽  
Vol 833 ◽  
Author(s):  
Byoung-Gue Min ◽  
Jong-Min Lee ◽  
Seong-Il Kim ◽  
Chul-Won Ju ◽  
Kyung-Ho Lee
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Silicon Oxide ◽  
Surface Recombination ◽  
Surface States ◽  
Bipolar Transistors ◽  
Base Layer ◽  
Current Gain ◽  
Device Structure ◽  
Double Heterojunction ◽  
Gain Reduction

ABSTRACTA significant degradation of current gain of InP/InGaAs/InP double heterojunction bipolar transistors was observed after passivation. The amount of degradation depended on the degree of surface exposure of the p-type InGaAs base layer according to the epi-structure and device structure. The deposition conditions such as deposition temperature, kinds of materials (silicon oxide, silicon nitride and aluminum oxide) and film thickness were not major variables to affect the device performance. The gain reduction was prevented by the BOE treatment before the passivation. A possible explanation of this behavior is that unstable non-stoichiometric surface states produced by excess In, Ga, or As after mesa etching are eliminated by BOE treatment and reduce the surface recombination sites.

Low‐temperature migration enhanced epitaxy of base material for AlGaAs/GaAs heterojunction bipolar transistors

1993 ◽  
Vol 63 (6) ◽  
pp. 809-811 ◽  
Author(s):  
Kai Zhang ◽  
Der‐Woei Wu ◽  
Jianming Fu ◽  
D. L. Miller ◽  
Mike Fukuda ◽  
...  
Keyword(s):  
Low Temperature ◽  
Heterojunction Bipolar Transistors ◽  
Base Material ◽  
Bipolar Transistors ◽  
Migration Enhanced Epitaxy

Base-emitter injection characterization in low-temperature pseudo-heterojunction bipolar transistors

1990 ◽  
Vol 37 (10) ◽  
pp. 2222-2229 ◽  
Author(s):  
K. Yano ◽  
K. Nakazato ◽  
M. Miyamoto ◽  
M. Aoki ◽  
K. Shimohigashi
Keyword(s):  
Low Temperature ◽  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors

Evaluation of Silicon Carbide Formed with a Single Precursor of Di-Tert-Butylsilane

1992 ◽  
Vol 242 ◽  
Author(s):  
Sing-Pin Tay ◽  
J. P. Ellul ◽  
Susan B. Hewitt ◽  
N. G. Tarr ◽  
A. R. Boothroyd
Keyword(s):  
Silicon Carbide ◽  
Low Temperature ◽  
Amorphous Silicon ◽  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Amorphous Silicon Carbide ◽  
Single Precursor ◽  
C Doping ◽  
Low Temperature Process

ABSTRACTA low temperature process of silicon carbide deposition using the pyrolysis of di-tert-butylsilane has been explored for formation of emitter structures in silicon heterojunction bipolar transistors. Near stoichiometric amorphous silicon carbide films were achieved at 775°C. Doping and annealing of these films resulted in resistivity as low as 0.02 ohm-cm.

AlGaAs/GaAs heterojunction bipolar transistors fabricated using a self-aligned dual-lift-off process

1987 ◽  
Vol 8 (7) ◽  
pp. 303-305 ◽  
Author(s):  
M.-C.F. Chang ◽  
P.M. Asbeck ◽  
K.C. Wang ◽  
G.J. Sullivan ◽  
Neng-Haung Sheng ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Lift Off

Static Performance of SiGe HBTs at Low Temperature

2014 ◽  
Vol 666 ◽  
pp. 59-63
Author(s):  
Maya Lakhdara ◽  
Saϊda Latreche ◽  
Christian Gontrand
Keyword(s):  
Low Temperature ◽  
Heterojunction Bipolar Transistors ◽  
High Performance ◽  
Industrial Process ◽  
Bipolar Transistors ◽  
Fundamental Aspect ◽  
Cryogenic Temperatures ◽  
Sige Hbt ◽  
Static Performance ◽  
The Impact

—This paper analyse is the impact of cryogenic temperatures for SiGe Heterojunction Bipolar Transistors (HBTs) base, realised in BiCMOS9 0.13μm industrial process. The use of these components in microwaves applications exposed to various temperatures is fundamental aspect to predict in precise way its electric characteristics. This paper investigates the temperature dependence from (170 K to 300 K) of DC, for NPN SiGe heterojunction bipolar transistors (HBTs) and notably modeling high performance Si/SiGe HBT for telecommunication and radar detection (>0.5THz) in low temperature (cryogenic temperature).

High-Power Characteristics of GaN/InGaN Double Heterojunction Bipolar Transistors with a Regrown p-InGaN Base Layer

2003 ◽  
Vol 798 ◽  
Author(s):  
Toshiki Makimoto ◽  
Yoshiharu Yamauchi ◽  
Kazuhide Kumakura
Keyword(s):  
High Power ◽  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Base Layer ◽  
Collector Current ◽  
Power Characteristics ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Double Heterojunction ◽  
Extrinsic Base

ABSTRACTWe have investigated high-power characteristics of GaN/InGaN double heterojunction bipolar transistors on SiC substrates grown by metalorganic vapor phase epitaxy. The p-InGaN extrinsic base layers were regrown to improve ohmic characteristics of the base. Base-collector diodes showed low leakage current at their reverse bias voltages due to a wide bandgap of a GaN collector, resulting in a high-voltage transistor operation. A 90 μm × 50 μm device operated up to a collector-emitter voltage of 28 V and a collector current of 0.37 A in its common-emitter current-voltage characteristics at room temperature, which corresponds to a DC power of 10.4 W. A collector current density and a power density are as high as 8.2 kA/cm2 and 230 kW/cm2, respectively. These results show that nitride HBTs are promising for high-power electronic devices.

Sign in / Sign up

Export Citation Format

Share Document