High‐conductance, low‐leakage diamond Schottky diodes

1993 ◽  
Vol 63 (7) ◽  
pp. 952-954 ◽  
Author(s):  
M. W. Geis ◽  
N. N. Efremow ◽  
J. A. von Windheim
Keyword(s):  
Schottky Diodes ◽  
Low Leakage ◽  
High Conductance

Transparent Transistors Based on Semiconducting Oxides

2003 ◽  
Vol 786 ◽  
Author(s):  
Y.W. Kwon ◽  
Y. Li ◽  
Y.W. Heo ◽  
M. Jones ◽  
Vijay ◽  
...  
Keyword(s):  
Indium Tin Oxide ◽  
Field Effect Transistors ◽  
Dielectric Strength ◽  
Charge Densities ◽  
Low Leakage ◽  
Active Layers ◽  
Low Leakage Current ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
High Conductance

ABSTRACTThe synthesis and properties of oxide-based thin film transistors (TFTs) is reported using pulsed laser deposition. The field effect transistors use ZnO as the channel material. Low leakage current density is achieved with amorphous (CeTb)MgAl11O19 (CTMA) serving as the gate oxide, whose dielectric strength is measured to be > 5MV/cm for structures fabricated on Indium Tin oxide (ITO) substrates. Capacitance-voltage properties show that n-type active layers are realized with undoped ZnO. Charge densities in undoped ZnO are measured to be 1018 to 1019 / cm3 using Hall measurement and CV plots. Current-voltage measurements for TFT operation are reported. Channel materials on patterned substrates show high conductance and modulation of channel conductance. C-V measurements with MOS structure using doped ZnO and ZnxMg1-xO will also be described. The properties of depletion mode TFTs fabricated with doped and undoped oxide channel will be discussed in detail.

scholarly journals Higher Voltage Ni/CdTe Schottky Diodes With Low Leakage Current

2009 ◽  
Vol 56 (4) ◽  
pp. 1827-1834 ◽  
Author(s):  
L. A. Kosyachenko ◽  
V. M. Sklyarchuk ◽  
O. F. Sklyarchuk ◽  
O. L. Maslyanchuk ◽  
V. A. Gnatyuk ◽  
...  
Keyword(s):  
Leakage Current ◽  
Schottky Diodes ◽  
Low Leakage ◽  
Low Leakage Current

New Diode Designs Compatible with Vertical 4H-SiC JFET Fabrication Process

2007 ◽  
Vol 556-557 ◽  
pp. 1003-1006
Author(s):  
Pierre Brosselard ◽  
Dominique Tournier ◽  
Miquel Vellvehi ◽  
Josep Montserrat ◽  
Phillippe Godignon ◽  
...  
Keyword(s):  
Schottky Diode ◽  
Contact Region ◽  
Metal Layer ◽  
Schottky Diodes ◽  
Schottky Contact ◽  
Electrical Characteristics ◽  
Process Technology ◽  
Leakage Currents ◽  
Low Leakage ◽  
Surge Current

In this paper, we propose new designs of Schottky, JBS and PiN diodes, which process technology is compatible with that of vertical power SiC JFETs. Three novel diode designs are proposed and we report their electrical characteristics. The P+ buried layer implant of the JFET is used for the PiN anode formation and for the P+ islands of the JBS. The Schottky diode differs from a standard Schottky diode since buried rings below the Schottky contact region have been included and the anode metal layer also contacts the buried P+ region at the diode periphery. With this last approach, the resulting Schottky diodes show low leakage currents and surge current capability, with a lower on-state voltage than the JBS.

Ultra-low leakage and high breakdown Schottky diodes fabricated on free-standing GaN substrate

2010 ◽  
Vol 26 (2) ◽  
pp. 022002 ◽  
Author(s):  
Yaqi Wang ◽  
Siddharth Alur ◽  
Yogesh Sharma ◽  
Fei Tong ◽  
Resham Thapa ◽  
...  
Keyword(s):  
Schottky Diodes ◽  
Free Standing ◽  
Low Leakage

Epitaxial Growth of SiC in a Vertical Multi-Wafer CVD System: Already Suited as Production Process?

1999 ◽  
Vol 572 ◽  
Author(s):  
Roland Rupp ◽  
Christian Hecht ◽  
Arno Wiedenhofer ◽  
Dietrich Stephani
Keyword(s):  
Epitaxial Growth ◽  
Gas Flow ◽  
Defect Density ◽  
Schottky Diodes ◽  
Impurity Level ◽  
Thickness Variation ◽  
Epitaxial Layers ◽  
Growth Step ◽  
Low Leakage ◽  
Low Leakage Current

ABSTRACTResults about a new CVD system suited for epitaxial growth on six 2 inch SiC-wafers at a time are presented. Excellent gas flow stability is achieved for this new reactor type as shown by in- situ observations of the gas flow dynamics in the reactor chamber. These experimental results agree favorably with numerical process simulation results.The epitaxial layers grown in the multi-wafer system so far show a by an order of magnitude higher background impurity level (≤1015 cm−3) as reported previously for layers grown in single-wafer systems by the authors and other groups (≤ 1014 cm−3). On the other hand, the doping homogeneity achieved until today is very encouraging. The variation on a 2 inch wafer is less than ± 20% at about 1*1016 cm−3. The wafer to wafer variation of the average doping value both within a run and from run to run is within 15 %. The reproducibility and uniformity of the layer thickness is even better (total thickness variation ≤5% on a 2 inch wafer). The surface of the epitaxial layers is very smooth with a typical growth step height of 0.5 nm (4H, 8° off orientation). First measurements on Schottky diodes build on these layers show low leakage current values indicating low point defect density in the epitaxial layers.

4.5 kV SiC Junction Barrier Schottky Diodes with Low Leakage Current and High Forward Current Density

2017 ◽  
Vol 897 ◽  
pp. 427-430 ◽  
Author(s):  
Johannes Schoeck ◽  
Jonas Buettner ◽  
Mathias Rommel ◽  
Tobias Erlbacher ◽  
Anton J. Bauer
Keyword(s):  
Leakage Current ◽  
Breakdown Voltage ◽  
Current Density ◽  
Voltage Drop ◽  
Schottky Diodes ◽  
Low Leakage ◽  
Forward Current ◽  
Low Leakage Current ◽  
Forward Voltage Drop ◽  
Chip Size

High-voltage 4H-SiC Junction Barrier Schottky diodes with a reverse breakdown voltage of over 4.5 kV and a turn-on voltage below 1 V have been fabricated. They achieved a forward current of 5 A at a forward voltage drop of 1.8 V and 20 A at 4.2 V. A low reverse leakage current of 0.3 μA at 1.2 kV and 37 μA at 3.3 kV was measured. The chip size was 7.3 mm x 7.3 mm, the active area 0.25 cm2 and the diode was able to handle a repetitive pulse current density of over 300 A/cm2 without degradation. Floating field rings in combination with a field-stop ring were used as edge termination to reach 73 % of the theoretical breakdown voltage. The epitaxial layer was 32 μm thick, with a nitrogen doping concentration of 1 x 1015 cm-3. The JBS diodes have been manufactured in a 100 mm SiC prototyping line, using well established processing technology, to achieve cost-efficient devices.

Sign in / Sign up

Export Citation Format

Share Document