Low-leakage p-type diamond Schottky diodes prepared using vacuum ultraviolet light/ozone treatment

2009 ◽  
Vol 105 (12) ◽  
pp. 126109 ◽  
Author(s):  
T. Teraji ◽  
Y. Garino ◽  
Y. Koide ◽  
T. Ito
Keyword(s):  
Ultraviolet Light ◽  
Vacuum Ultraviolet ◽  
Schottky Diodes ◽  
Ozone Treatment ◽  
Low Leakage ◽  
P Type

Simultaneous removal of NO and SO2 using vacuum ultraviolet light (VUV)/heat/peroxymonosulfate (PMS)

Chemosphere ◽  
2018 ◽  
Vol 190 ◽  
pp. 431-441 ◽  
Author(s):  
Yangxian Liu ◽  
Yan Wang ◽  
Qian Wang ◽  
Jianfeng Pan ◽  
Jun Zhang
Keyword(s):  
Ultraviolet Light ◽  
Vacuum Ultraviolet ◽  
Simultaneous Removal

A note on current-voltage measurements of n-type and p-type Pd2Si Schottky diodes

1991 ◽  
Vol 34 (2) ◽  
pp. 215-216 ◽  
Author(s):  
Vincent W.L. Chin ◽  
John W.V. Storey ◽  
Martin A. Green
Keyword(s):  
Schottky Diodes ◽  
Current Voltage ◽  
P Type

Surface modification of polymeric thin films with vacuum ultraviolet light

2008 ◽  
Vol 40 (3-4) ◽  
pp. 400-403 ◽  
Author(s):  
E. Sarantopoulou ◽  
J. Kovač ◽  
Z. Kollia ◽  
I. Raptis ◽  
S. Kobe ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Modification ◽  
Ultraviolet Light ◽  
Vacuum Ultraviolet ◽  
Polymeric Thin Films

High Volume Production Growth of GaAs on Silicon Substrates

1986 ◽  
Vol 67 ◽  
Author(s):  
Chris R. Ito ◽  
M. Feng ◽  
V. K. Eu ◽  
H. B. Kim
Keyword(s):  
Schottky Diodes ◽  
High Volume ◽  
Wafer Surface ◽  
Silicon Substrates ◽  
Growth Technique ◽  
Wafer Thickness ◽  
Production Growth ◽  
High Volume Production ◽  
Volume Production ◽  
P Type

ABSTRACTA high-volume epitaxial reactor has been used to investigate the feasibility for the production growth of GaAs on silicon substrates. The reactor is a customized system which has a maximum capacity of 39 three-inch diameter wafers and can accommodate substrates as large as eight inches in diameter. The MOCVD material growth technique was used to grow GaAs directly on p-type, (100) silicon substrates, three and five inches in diameter. The GaAs surfaces were textured with antiphase boundaries. Double-cyrstal rocking curve measurements showed single-cyrstal GaAs with an average FWHMof 520 arc seconds measured at four points over the wafer surface. Within-wafer thickness uniformity was ± 4% with a wafer-to-wafer uniformity of ± 2%. Photoluminescence spectra showed Tour peaks at 1.500, 1.483, 1.464, and 1.440 ev. Schottky diodes were fabricated on the GaAs on silicon material.

Ultraviolet light-emitting diodes with polarization-doped p-type layer

2016 ◽  
Vol 97 ◽  
pp. 353-357 ◽  
Author(s):  
Wenxiao Hu ◽  
Ping Qin ◽  
Weidong Song ◽  
Chongzhen Zhang ◽  
Rupeng Wang ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Type Layer ◽  
P Type ◽  
Ultraviolet Light Emitting Diodes

Optimization of p-type Nanocrystalline Silicon Thin Films for Solar Cells and Photodiodes

2009 ◽  
Vol 1153 ◽  
Author(s):  
Yuri Vygranenko ◽  
Ehsanollah Fathi ◽  
Andrei Sazonov ◽  
Manuela Vieira ◽  
Gregory Heiler ◽  
...  
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Chemical Vapor ◽  
Percolation Cluster ◽  
Nanocrystalline Silicon ◽  
Film Structure ◽  
Silicon Thin Films ◽  
Low Leakage ◽  
In Doping ◽  
P Type

AbstractWe report on structural, electronic, and optical properties of boron-doped, hydrogenated nanocrystalline silicon (nc-Si:H) thin films deposited by plasma-enhanced chemical vapor deposition (PECVD) at a substrate temperature of 150°C. Film properties were studied as a function of trimethylboron-to-silane ratio and film thickness. The film thickness was varied in the range from 14 to 100 nm. The conductivity of 60 nm thick films reached a peak value of 0.07 S/cm at a doping ratio of 1%. As a result of amorphization of the film structure, which was indicated by Raman spectra measurements, any further increase in doping reduced conductivity. We also observed an abrupt increase in conductivity with increasing film thickness ascribed to a percolation cluster composed of silicon nanocrystallites. The absorption loss of 25% at a wavelength of 400 nm was measured for the films with optimized conductivity deposited on glass and glass/ZnO:Al substrates. A low-leakage, blue-enhanced p-i-n photodiode with an nc-Si p-layer was also fabricated and characterized.

Growth, Doping, Device Development and Characterization of CVD Beta-SiC Epilayers on Si(100) and Alpha-SiC(0001)

1987 ◽  
Vol 97 ◽  
Author(s):  
H. Kong ◽  
H. J. Kim ◽  
J. A. Edmond ◽  
J. W. Palmour ◽  
J. Ryu ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Elevated Temperatures ◽  
Deep Level ◽  
Schottky Diodes ◽  
Free Carriers ◽  
Device Development ◽  
Post Annealing ◽  
P Type ◽  
Sic Films

ABSTRACTMonocrystalline β-SiC films have been chemically vapor deposited on Si(100) and c-SiC(0001) at 1660K-1823K and 0.1 MPa using SiH4 and C2H4 carried in H2. Films grown directly on Si(100) contained substantial concentrations of dislocations, stacking faults and antiphase boundaries (APB); those on α-SiC(0001) contained double positioning boundaries. Both the APBs and the double positioning boundaries were eliminated by using off-axis orientations of the respective substrates. Films produced on Si(100) have also been doped during growth and via ion implantation with B or Al (p-type) or P or N (n-type) at LN, room and elevated temperatures. Results from the former procedure showed the ionized dopant/total dopant concentration ratios for N, P, B and Al to be 0.1, 0.2, 0.002 and 0.01, respectively. The solubility limits of N, P and B at 1660K were determined to be ∼ 2E20, 1E18 and 8E18 cm−3, respectively; that of Al exceeds 2E19 cm−3. High temperature ion implantation coupled with dynamic and post annealing resulted in a markedly reduced defect concentration relative to that observed in similar research at the lower temperatures. Schottky diodes, p-n junctions, and MOSFET devices have been fabricated. The p-n junctions have the characteristics of insulators containing free carriers and deep level traps. The MOSFETs show very good I-V characteristics up to 673K, but have not been optimized.

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