Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's
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3.3 kV punchthrough IGBT with low loss and fast switching

Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's ◽

10.1109/ispsd.1997.601479 ◽

2002 ◽

Cited By ~ 10

Author(s):

M. Mori ◽

H. Kobayashi ◽

T. Saiki ◽

M. Nagasu ◽

J. Sakano ◽

...

Keyword(s):

Low Loss ◽

Fast Switching

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A performance comparison between new reduced surface drain "RSD" LDMOS and RESURF and conventional planar power devices rated at 20 V

Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's ◽

10.1109/ispsd.1997.601466 ◽

2002 ◽

Cited By ~ 13

Author(s):

T. Efland ◽

C.-Y. Tsai ◽

J. Erdeljac ◽

J. Mitros ◽

L. Hutter

Keyword(s):

Performance Comparison ◽

Power Devices ◽

Reduced Surface ◽

A Performance

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The dual-gate W-switched power MOSFET: a new concept for improving light load efficiency in DC/DC converters

Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's ◽

10.1109/ispsd.1997.601468 ◽

2002 ◽

Cited By ~ 18

Author(s):

R.K. Williams ◽

W. Grabowski ◽

A. Cowell ◽

M. Darwish ◽

J. Berwick

Keyword(s):

Power Mosfet ◽

Light Load ◽

Dual Gate

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High voltage charge-storage diodes and their new applications

Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's ◽

10.1109/ispsd.1997.601488 ◽

2002 ◽

Cited By ~ 2

Author(s):

S. Shinohara ◽

H. Kobayashi ◽

Y. Hasegawa ◽

R. Saito

Keyword(s):

High Voltage ◽

Charge Storage ◽

New Applications

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Hole bypassing N/sup +/ emitter structure of the trench IGBT for the safe switching operation

Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's ◽

10.1109/ispsd.1997.601490 ◽

2002 ◽

Author(s):

H.-S. Kim ◽

T.-S. Lee ◽

C.-M. Yun ◽

K.-H. Oh ◽

P.-G. Im ◽

...

Keyword(s):

Switching Operation

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Irradiation experiments with high-voltage power devices as a possible means to predict failure rates due to cosmic rays

Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's ◽

10.1109/ispsd.1997.601462 ◽

2002 ◽

Cited By ~ 14

Author(s):

P. Voss ◽

K.H. Maier ◽

W. Meczynski ◽

H.W. Becker ◽

E. Normand ◽

...

Keyword(s):

Cosmic Rays ◽

High Voltage ◽

Failure Rates ◽

Power Devices

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Switching behaviour of high voltage IGBTs and its dependence on gate-drive

Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's ◽

10.1109/ispsd.1997.601446 ◽

2002 ◽

Cited By ~ 5

Author(s):

Y.C. Gerstenmaier ◽

M. Stoisiek

Keyword(s):

High Voltage ◽

Switching Behaviour

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The effect of gate doping on the electrical conduction and reliability of thick gate oxides

Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's ◽

10.1109/ispsd.1997.601456 ◽

2002 ◽

Cited By ~ 3

Author(s):

M.K. Khan ◽

F. Zdancewicz ◽

A. Bhalla

Keyword(s):

Electrical Conduction ◽

Gate Oxides

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Back-channel effect on SOI CMOS for high voltage power ICs

Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's ◽

10.1109/ispsd.1997.601510 ◽

2002 ◽

Cited By ~ 2

Author(s):

Y. Hayasaki ◽

H. Takano ◽

M. Suzumura

Keyword(s):

High Voltage ◽

Channel Effect ◽

Soi Cmos

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Planar terminations in 4H-SiC Schottky diodes with low leakage and high yields

Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's ◽

10.1109/ispsd.1997.601459 ◽

2002 ◽

Cited By ~ 9

Author(s):

R. Singh ◽

J.W. Palmour

Keyword(s):

Schottky Diodes ◽

Low Leakage ◽

High Yields

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Proceedings of 9th International Symposium on Power Semiconductor Devices and IC'sLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

3.3 kV punchthrough IGBT with low loss and fast switching

A performance comparison between new reduced surface drain "RSD" LDMOS and RESURF and conventional planar power devices rated at 20 V

The dual-gate W-switched power MOSFET: a new concept for improving light load efficiency in DC/DC converters

High voltage charge-storage diodes and their new applications

Hole bypassing N/sup +/ emitter structure of the trench IGBT for the safe switching operation

Irradiation experiments with high-voltage power devices as a possible means to predict failure rates due to cosmic rays

Switching behaviour of high voltage IGBTs and its dependence on gate-drive

The effect of gate doping on the electrical conduction and reliability of thick gate oxides

Back-channel effect on SOI CMOS for high voltage power ICs

Planar terminations in 4H-SiC Schottky diodes with low leakage and high yields

Proceedings of 9th International Symposium on Power Semiconductor Devices and IC's
Latest Publications