Formation and Relaxation of Ni(Au) Disilicide

1995 ◽  
Vol 402 ◽  
Author(s):  
D. Mangelinck ◽  
P. Ga ◽  
J. M. Gay ◽  
B. Pichaud
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Solid Phase ◽  
Lattice Parameters ◽  
Solid State Reactions ◽  
Solid Phase Epitaxy ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
X Ray ◽  
Au Clusters ◽  
Relaxation Modes

AbstractThe formation and the relaxation of NiSi2 films with and without Au are examined by scanning electron microscopy, X-ray diffraction and Rutherford backscattering spectrometry. We studied the solid state reactions between a Ni(7 at.% Au) thin film and a Si substrate which occurs during the solid phase epitaxy before the formation of NiSi2. We show that the addition of Au to the Ni film drastically affects the silicides formation: Ni2Si and NiSi appear simultaneously and the nucleation temperature of NiSi 2 is lowered. The solubility of Au in the three silicides is limited which induces a precipitation of Au. Depending on temperature this precipitation takes various forms: Au enriched surface layer or Au clusters at inner interfaces. The films lattice parameters both parallel and perpendicular to the interface are also measured and compared to the lattice parameters of bulk samples which have been made by solidification from the melt. The relaxation modes are deduced from these measurements.

Evolution of Epitaxial SixGei1-x Alloys on Si(100) During Thermal Annealing a-Ge/Au Bilayers Deposited on Si Substrate

1992 ◽  
Vol 280 ◽  
Author(s):  
Z. Ma ◽  
L. H. Allen
Keyword(s):  
Single Crystal ◽  
Thermal Annealing ◽  
Rutherford Backscattering Spectrometry ◽  
Solid Phase ◽  
Growth Dynamics ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron

ABSTRACTSolid phase epitaxial (SPE) growth of SixGei1-x alloys on Si (100) was achieved by thermal annealing a-Ge/Au bilayers deposited on single crystal Si substrate in the temperature range of 280°C to 310°C. Growth dynamics was investigated using X-ray diffraction, Rutherford backscattering spectrometry, and cross-sectional transmission electron microscopy. Upon annealing, Ge atoms migrate along the grain boundaries of polycrystalline Au and the epitaxial growth initiates at localized triple points between two Au grains and Si substrate, simultaneously incorporating a small amount of Si dissolved in Au. The Au is gradually displaced into the top Ge layer. Individual single crystal SixGei1-x islands then grow laterally as well as vertically. Finally, the islands coalesce to form a uniform layer of epitaxial SixGe1-x alloy on the Si substrate. The amount of Si incorporated in the final epitaxial film was found to be dependent upon the annealing temperature.

Electrical Activation of Heavily Doped Arsenic Implanted Silicon

1988 ◽  
Vol 128 ◽  
Author(s):  
J. Said ◽  
H. Jaouen ◽  
G. Ghibaudo ◽  
I. Stoemenos ◽  
P. Zaumseil
Keyword(s):  
Solid Phase ◽  
Electrical Activation ◽  
Activation Process ◽  
Solid Phase Epitaxy ◽  
X Ray Diffraction ◽  
Electrical Transmission ◽  
X Ray ◽  
Defect Migration ◽  
Transmission Electron ◽  
Heavily Doped

ABSTRACTThe combination of electrical, Transmission Electron Microscopy and Triple Crystal X-ray Diffraction measurements allow us to separate the existence of a local impurity activation process from the amorphous- crystal transformation. The local process occurs in the highly damaged surface layer induced by the arsenic implantation and is efficient well below the Solid Phase Epitaxy transition temperature. It is suggested that point defect migration should play an important role in the electrical impurity activation at low annealing temperatures.

Fabrication of heteroepitaxial thin films of layered oxychalcogenides LnCuOCh (Ln = La–Nd; Ch = S–Te) by reactive solid-phase epitaxy

2004 ◽  
Vol 19 (7) ◽  
pp. 2137-2143 ◽  
Author(s):  
Hidenori Hiramatsu ◽  
Kazushige Ueda ◽  
Kouhei Takafuji ◽  
Hiromichi Ohta ◽  
Masahiro Hirano ◽  
...  
Keyword(s):  
Thin Films ◽  
Solid Phase ◽  
Epitaxial Films ◽  
Annealing Process ◽  
Epitaxial Thin Films ◽  
Solid Phase Epitaxy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Preparation Conditions ◽  
Thermal Annealing Process

Processes and preparation conditions for growing epitaxial thin films of Cu-based, layered oxychalcogenides LnCuOCh (Ln = La, Ce, Pr or Nd; Ch = S1-xSex or Se1-yTey) are reported. Epitaxial thin films on MgO (001) substrates were prepared by a reactive solid-phase epitaxy method. Four-axes high-resolution x-ray diffraction measurements revealed that the crystallographic orientation is (001)[110] LnCuOCh || (001)[110] MgO and the internal stress of the crystalline lattices in the films are relaxed during thermal-annealing process of the reactive solid-phase epitaxy. Furthermore, except for CeCuOS, systematic variations in the lattice constant by chalcogen or lanthanide ion substitutions were observed. These results demonstrated that the reactive solid-phase epitaxy is an efficient technique for fabricating LnCuOCh epitaxial films.

scholarly journals Mechanical-chemical synthesis Ba0.77Sr0.23TiO3

2012 ◽  
Vol 44 (1) ◽  
pp. 47-55 ◽  
Author(s):  
D. Kosanovic ◽  
N. Obradovic ◽  
J. Zivojinovic ◽  
S. Filipovic ◽  
A. Maricic ◽  
...  
Keyword(s):  
Solid Phase ◽  
Phase Particle ◽  
High Energy ◽  
Solid State Reactions ◽  
Process Synthesis ◽  
X Ray Diffraction ◽  
Time Intervals ◽  
X Ray ◽  
Characteristic Temperatures ◽  
Barium Strontium

Barium-Strontium-Titanate Ba0.77Sr0.23TiO3 was prepared from starting materials BaCO3, SrCO3 and TiO2 through solid-state reactions. Mixtures of these oxides are mechanically activated in a high-energy planetary ball mill at different time intervals from 0 to 120 minutes. In order to obtain information on phase composition, crystal structure was determent by X-ray diffraction. It was observed that after 80 minutes in process synthesis Ba0.77Sr0.23TiO3 started Thermal analyzes were performed in order to determine the characteristic temperatures of the processes that occur in the solid phase. Particle size distribution, together with electron microscopy scanning has given us very useful information about the morphology of the powder.

STUDY OF ION BEAM SYNTHESIZED YSi2-x LAYERS

2010 ◽  
Vol 09 (06) ◽  
pp. 549-552
Author(s):  
AYACHE RACHID ◽  
BOUABELLOU ABDERRAHMANE ◽  
EICHHORN FRANK
Keyword(s):  
Electron Microscopy ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
X Ray ◽  
Pole Figures ◽  
Different Temperatures ◽  
Scanning Electron

The processes in the synthesis of a thin layer of hexagonal YSi 2-x phase on a single-crystal Si (111) substrate by implantation of 195 keV Y ions with a dose of 2 × 1017 Y +/ cm 2 at 300°C followed by annealing in an N2 atmosphere at different temperatures for 1 h are investigated. The characterization of the as-implanted and annealed samples is performed using Rutherford backscattering spectrometry (RBS) and X-ray diffraction (XRD) pole figures. Scanning electron microscopy (SEM) was used to view the surface topography. The results show that the orientation relationship between the YSi 2-x layer and Si substrate is YSi 2-x(0001)// Si (111) and YSi 2-x[11–20]// Si [110].

scholarly journals Roentgenographic investigation of solid-phase equilibria in the PbSe-AgSbSe2system

2019 ◽  
Vol 2 (2) ◽  
Author(s):  
Babanly Mahammad Baba ◽  
Mansimova Shabnam Hamlet ◽  
OrujluElnur Najaf
Keyword(s):  
Phase Equilibria ◽  
Solid Solutions ◽  
Solid Phase ◽  
Diffraction Method ◽  
Lattice Parameters ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cubic Lattice

The solid-phase equilibria in the 2PbSe-AgSbSe2system were studied by using the powder X-ray diffraction method.  It is established that the system is characterized by the formation of ~60 mol% solid solutions basedon AgSbSe2.Solubility based on PbSe is about 3mol%. The cubic lattice parameters of solid solutions are defined.

Zur Kenntnis von Hydridhalogeniden MHX der Seltenen Erden Eu, Yb und Sm (X = Cl, Br, I) / A Study on Hydride Halide Compounds MHX of the Rare Earths Eu,Yb, and Sm (X = Cl,Br,I)

1982 ◽  
Vol 37 (5) ◽  
pp. 574-578 ◽  
Author(s):  
H. P. Beck ◽  
A. Limmer
Keyword(s):  
Solid State ◽  
Crystal Chemistry ◽  
Rare Earths ◽  
Alkaline Earth ◽  
Lattice Parameters ◽  
Solid State Reactions ◽  
X Ray Diffraction ◽  
X Ray ◽  
Diffraction Patterns

New hydride halide compounds MHX (M = Eu, Yb, Sm; X = Cl, Br, I) of divalent rare earths have been prepared by solid-state reactions. Lattice parameters and X-ray diffraction patterns are presented for these compounds. All compounds are isostructural with tetragonal PbFCl. Refined lattice parameters of alkaline earth hydride halides are given. The crystal chemistry of MHX and MFX is compared and the geometric variations in the structure of these compounds are interpreted on the basis of changes in covalency

Photo-Assisted MOVPE Growth of ZnMgS on (100) Si

2001 ◽  
Vol 692 ◽  
Author(s):  
Angel Rodriguez ◽  
Jeremy Shattuck ◽  
Xiaoguang Zhang ◽  
Peng Li ◽  
David Parent ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Solid Phase ◽  
Control Sample ◽  
Peak Position ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
X Ray ◽  
Chlorine Doping ◽  
Movpe Growth ◽  
First Time

AbstractThis paper presents for the first time photo-assisted Metalorganic vapor phase epitaxial (MOVPE) growth of ZnMgS on Si (100) substrates. The growth was done using dimethylzinc (DMZn), bismethylcyclo-pentadienyl-magnesium ((MeCP)2Mg), and diethylsulfhide (DES) as zinc, magnesium, and sulfur precursors. Epitaxial characterization by X-ray Photoelectron Spectroscopy (XPS), and low - angle X-ray Diffraction (XRD) results are presented. Mg solid phase incorporation is estimated to vary from 0 to 60 percent. The epitaxial nature of the ZnMgS layers has been verified using the low-angle X-ray diffraction eliminating any interference from the Si substrate. It can be shown with this technique that the change in the ZnMgS peak position changes from 27.35 degrees to 26.5 degrees with an increase in Mg incorporation, compared with a Si control sample peak at 27.4 degrees. XRD results obtained have been verified with XPS data. Chlorine doping of the ZnMgS layer was also studied. Concentrations up to 3 × 1015 cm−3 were observed in the ZnMgS layer. Results of the n (ZnMgS:Cl) – p (Si) diodes fabricated are also presented.

TEM studies of solid-state reactions in sputter-deposited Nb/Al multilayer thin films

1996 ◽  
Vol 54 ◽  
pp. 1020-1021
Author(s):  
F. Ma ◽  
S. Vivekanand ◽  
K. Barmak ◽  
C. Michaelsen
Keyword(s):  
Thin Films ◽  
Solid State ◽  
Stoichiometric Composition ◽  
Analytical Electron Microscopy ◽  
Grain Structure ◽  
Solid State Reactions ◽  
Multilayer Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sputter Deposited

Solid state reactions in sputter-deposited Nb/Al multilayer thin films have been studied by transmission and analytical electron microscopy (TEM/AEM), differential scanning calorimetry (DSC) and X-ray diffraction (XRD). The Nb/Al multilayer thin films for TEM studies were sputter-deposited on (1102)sapphire substrates. The periodicity of the films is in the range 10-500 nm. The overall composition of the films are 1/3, 2/1, and 3/1 Nb/Al, corresponding to the stoichiometric composition of the three intermetallic phases in this system.Figure 1 is a TEM micrograph of an as-deposited film with periodicity A = dA1 + dNb = 72 nm, where d's are layer thicknesses. The polycrystalline nature of the Al and Nb layers with their columnar grain structure is evident in the figure. Both Nb and Al layers exhibit crystallographic texture, with the electron diffraction pattern for this film showing stronger diffraction spots in the direction normal to the multilayer. The X-ray diffraction patterns of all films are dominated by the Al(l 11) and Nb(l 10) peaks and show a merging of these two peaks with decreasing periodicity.

Single-crystal investigation of Ce5AgxGe4−x (x = 0.1−1.08) with Sm5Ge4 type

2020 ◽  
Vol 75 (8) ◽  
pp. 765-768
Author(s):  
Bohdana Belan ◽  
Dorota Kowalska ◽  
Mariya Dzevenko ◽  
Mykola Manyako ◽  
Roman Gladyshevskii
Keyword(s):  
Crystal Structure ◽  
Single Crystal ◽  
Diffraction Data ◽  
Binary Compound ◽  
Lattice Parameters ◽  
X Ray Diffraction ◽  
Space Group ◽  
X Ray

AbstractThe crystal structure of the phase Ce5AgxGe4−x (x = 0.1−1.08) has been determined using single-crystal X-ray diffraction data for Ce5Ag0.1Ge3.9. This phase is isotypic with Sm5Ge4: space group Pnma (No. 62), Pearson code oP36, Z = 4, a = 7.9632(2), b = 15.2693(5), c = 8.0803(2) Å; R1 = 0.0261, wR2 = 0.0460, 1428 F2 values and 48 variables. The two crystallographic positions 8d and 4c show Ge/Ag mixing, leading to a slight increase in the lattice parameters as compared to those of the pure binary compound Ce5Ge4.

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