Transient growth rate change during gas source molecular beam epitaxy of Si1−xGexalloys

1993 ◽  
Vol 62 (17) ◽  
pp. 2042-2044 ◽  
Author(s):  
N. Ohtani ◽  
S. M. Mokler ◽  
M. H. Xie ◽  
J. Zhang ◽  
B. A. Joyce
Keyword(s):  
Growth Rate ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Rate Change ◽  
Transient Growth ◽  
Gas Source

Influence of phosphine flow rate on Si growth rate in gas source molecular beam epitaxy

2000 ◽  
Vol 220 (4) ◽  
pp. 461-465 ◽  
Author(s):  
F. Gao ◽  
D.D. Huang ◽  
J.P. Li ◽  
Y.X. Lin ◽  
M.Y. Kong ◽  
...  
Keyword(s):  
Growth Rate ◽  
Molecular Beam Epitaxy ◽  
Flow Rate ◽  
Molecular Beam ◽  
Gas Source

GaN epilayers grown at high growth rate using gas source molecular beam epitaxy method

1998 ◽  
Vol 191 (1-2) ◽  
pp. 31-33 ◽  
Author(s):  
Xiaobing Li ◽  
Dianzhao Sun ◽  
Jianping Zhang ◽  
Meiying Kong
Keyword(s):  
Growth Rate ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Growth ◽  
High Growth Rate ◽  
Gas Source ◽  
Molecular Beam Epitaxy Method

Insituobservation of growth rate enhancement during gas source molecular beam epitaxy of Si1−xGexalloys on Si(100) surfaces

1992 ◽  
Vol 61 (21) ◽  
pp. 2548-2550 ◽  
Author(s):  
S. M. Mokler ◽  
N. Ohtani ◽  
M. H. Xie ◽  
J. Zhang ◽  
B. A. Joyce
Keyword(s):  
Growth Rate ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Rate Enhancement ◽  
Gas Source

N- and P-Type Doping of ZnSe Using Gas Source Molecular Beam Epitaxy

1994 ◽  
Vol 340 ◽  
Author(s):  
P. A. Fisher ◽  
E. Ho ◽  
J. L. House ◽  
G. S. Petrich ◽  
L. A. Kolodziejski ◽  
...  
Keyword(s):  
Growth Rate ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Secondary Ion Mass Spectrometry ◽  
Nitrogen Plasma ◽  
Gas Source ◽  
Excitonic Transition ◽  
N Incorporation ◽  
P Type ◽  
Donor Species

ABSTRACTHigh quality ZnSe:Cl has been grown on GaAs by gas source molecular beam epitaxy (GSMBE); elemental Zn and H2Se are used as source materials, with ZnCl2 as a dopant source for donors. Atomic Cl concentrations ([Cl]) approaching 1020 cm−3 have been incorporated into the lattice as indicated by secondary ion mass spectrometry (SIMS). At incorporation levels greater than 1020 cm−3, an appreciable decrease in the growth rate has been observed. The sharp transition to a negligible growth rate is attributed to the occurrence of a surface chemical reaction originating from Cl and H which are present in the GSMBE environment. For [Cl] as high as 4 x 1018 cm−3, the films exhibited high crystalline quality, as indicated by photoluminescence originating from a single intense donor-bound excitonic transition. Hydrogenation of semiconductors can potentially result in the electrical passivation of incorporated acceptor and donor species. In the case of ZnSe:Cl, H was present in the ZnSe layers, but did not appear to adversely affect the electrical properties of the n-type films. In contrast, for the growth of ZnSe:N, where a nitrogen plasma cell was employed as a source of nitrogen, the H concentration (as determined by SIMS) was observed to track the N concentration. The ZnSe:N films were highly resistive for various amounts of N incorporation, which suggests that H incorporation is an issue of primary importance in the p-type doping of ZnSe grown by GSMBE.

High performance InGaAsP/InP semiconductor quantum well lasers realized by gas source molecular beam epitaxy

1992 ◽  
Vol 2 (9) ◽  
pp. 1727-1738 ◽  
Author(s):  
A. Accard ◽  
F. Brillouet ◽  
E. Duda ◽  
B. Fernier ◽  
G. Gelly ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
High Performance ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Gas Source ◽  
Semiconductor Quantum Well
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