Selective growth of silicon‐germanium alloys by atmospheric‐pressure chemical vapor deposition at low temperatures

1991 ◽  
Vol 59 (12) ◽  
pp. 1479-1481 ◽  
Author(s):  
P. D. Agnello ◽  
T. O. Sedgwick ◽  
M. S. Goorsky ◽  
J. Ott ◽  
T. S. Kuan ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Silicon Germanium ◽  
Atmospheric Pressure ◽  
Low Temperatures ◽  
Chemical Vapor ◽  
Selective Growth ◽  
Pressure Chemical ◽  
Silicon Germanium Alloys

scholarly journals Toward understanding the phase-selective growth mechanism of films and geometrically-shaped flakes of 2D MoTe2

RSC Advances ◽  
2021 ◽  
Vol 11 (61) ◽  
pp. 38839-38848
Author(s):  
Tej B. Limbu ◽  
Bikram Adhikari ◽  
Seung Keun Song ◽  
Basant Chitara ◽  
Yongan Tang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Mechanism ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Selective Growth ◽  
Controlled Growth ◽  
Pressure Chemical

This study investigates the phase-controlled growth of flakes and films of 2D MoTe2 by atmospheric-pressure chemical vapor deposition and presents a thorough understanding on the growth mechanism.

Growth of Single-Crystal Pyrite Films by Atmospheric Pressure Chemical Vapor Deposition

2003 ◽  
Vol 15 (9) ◽  
pp. 1763-1765 ◽  
Author(s):  
Naoyuki Takahashi ◽  
Yusuke Nakatani ◽  
Takuma Yatomi ◽  
Takato Nakamura
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Pressure Chemical

scholarly journals Epitaxial Growth of Magnesia Films on Single Crystalline Magnesia Substrates by Atmospheric-Pressure Chemical Vapor Deposition

2016 ◽  
Vol 5 (2) ◽  
pp. 56
Author(s):  
Keiji Komatsu ◽  
Pineda Marulanda David Alonso ◽  
Nozomi Kobayashi ◽  
Ikumi Toda ◽  
Shigeo Ohshio ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Reciprocal Lattice ◽  
Chemical Vapor ◽  
X Ray ◽  
Pole Figures ◽  
Out Of Plane ◽  
Pressure Chemical

<p class="1Body">MgO films were epitaxially grown on single crystal MgO substrates by atmospheric-pressure chemical vapor deposition (CVD). Reciprocal lattice mappings and X-ray reflection pole figures were used to evaluate the crystal quality of the synthesized films and their epitaxial relation to their respective substrates. The X-ray diffraction profiles indicated that the substrates were oriented out-of-plane during MgO crystal growth. Subsequent pole figure measurements showed how all the MgO films retained the substrate in-plane orientations by expressing the same pole arrangements. The reciprocal lattice mappings indicated that the whisker film showed a relatively strong streak while the continuous film showed a weak one. Hence, highly crystalline epitaxial MgO thin films were synthesized on single crystal MgO substrates by atmospheric-pressure CVD.</p>

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