Extremely low resistivity, high electron concentration ZnSe grown by planar‐doping method

1992 ◽  
Vol 61 (23) ◽  
pp. 2811-2813 ◽  
Author(s):  
Ziqiang Zhu ◽  
Hiroshi Mori ◽  
Takafumi Yao
Keyword(s):  
Electron Concentration ◽  
High Electron ◽  
Low Resistivity ◽  
High Electron Concentration ◽  
Planar Doping

Terahertz conductivity of ultra high electron concentration 2DEGs in NTO/STO heterostructures

2016 ◽  
Author(s):  
Sara Arezoomandan ◽  
Hugo O. Condori Quispe ◽  
Ashish Chanana ◽  
Peng Xu ◽  
Ajay Nahata ◽  
...  
Keyword(s):  
Electron Concentration ◽  
High Electron ◽  
High Electron Concentration ◽  
Terahertz Conductivity

Peculiarities of the electrophysical properties of InSb/AlInSb/AlSb heterostructures with a high electron concentration in the two-dimensional channel

2014 ◽  
Vol 48 (3) ◽  
pp. 338-343
Author(s):  
T. A. Komissarova ◽  
A. N. Semenov ◽  
B. Ya. Meltser ◽  
V. A. Solov’ev ◽  
P. Paturi ◽  
...  
Keyword(s):  
Electron Concentration ◽  
High Electron ◽  
Two Dimensional ◽  
Electrophysical Properties ◽  
High Electron Concentration

scholarly journals Polarization induced ultra-high electron concentration up to 1020 cm-3 in graded AlGaN

2012 ◽  
Vol 61 (16) ◽  
pp. 163701
Author(s):  
Li Shi-Bin ◽  
Xiao Zhan-Fei ◽  
Su Yuan-Jie ◽  
Jiang Jing ◽  
Ju Yong-Feng ◽  
...  
Keyword(s):  
Electron Concentration ◽  
High Electron ◽  
High Electron Concentration

Defect Studies of GaN under Large Hydrostatic Pressure

1995 ◽  
Vol 395 ◽  
Author(s):  
C. Wetzel ◽  
S. Fischer ◽  
W. Walukiewicz ◽  
J. Ager III ◽  
E.E. Haller ◽  
...  
Keyword(s):  
Hydrostatic Pressure ◽  
Electron Concentration ◽  
Luminescence Band ◽  
Ambient Pressure ◽  
Conduction Band Edge ◽  
High Electron ◽  
High Electron Concentration ◽  
Strong Luminescence ◽  
Localized Defects ◽  
Strong Luminescence Band

ABSTRACTGaN plays a key role in the exploration of the properties of group-Ill nitrides. As grown GaN often shows a high electron concentration, e.g. 1019 cm−3, of as yet unidentified origin. Applying large hydrostatic pressure we studied the behavior of these donors and a frequently observed strong luminescence band at 3.42 eV. We find a drop of the electron concentration to 3×1017 cm−3 at 27 GPa and derive a binding energy of 126 meV for the neutral singlet donor level at this pressure. Such a pressure behavior of a donor is consistent with the model of strongly localized defects. Within the framework of a bandstructure calculation we predict the neutral level of this donor at 0.40 ± 0.10 eV above the conduction band edge at ambient pressure.

scholarly journals High electron concentration and mobility in Al-doped n-ZnO epilayer achieved via dopant activation using rapid-thermal annealing

2005 ◽  
Vol 97 (6) ◽  
pp. 066103 ◽  
Author(s):  
Kyoung-Kook Kim ◽  
Shigeru Niki ◽  
Jin-Yong Oh ◽  
June-O Song ◽  
Tae-Yeon Seong ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Electron Concentration ◽  
High Electron ◽  
Dopant Activation ◽  
High Electron Concentration

Anomalous Electrical Characteristics of Epitaxial InN Films Having a High Electron Concentration at Very Low Temperature

1997 ◽  
Vol 36 (Part 2, No. 3A) ◽  
pp. L256-L259 ◽  
Author(s):  
Naruhisa Miura ◽  
Hideaki Ishii ◽  
Akira Yamada ◽  
Makoto Konagai ◽  
Yasuyuki Yamauchi ◽  
...  
Keyword(s):  
Low Temperature ◽  
Electron Concentration ◽  
High Electron ◽  
Electrical Characteristics ◽  
High Electron Concentration ◽  
Very Low Temperature
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