scholarly journals High electron concentration and mobility in Al-doped n-ZnO epilayer achieved via dopant activation using rapid-thermal annealing

2005 ◽  
Vol 97 (6) ◽  
pp. 066103 ◽  
Author(s):  
Kyoung-Kook Kim ◽  
Shigeru Niki ◽  
Jin-Yong Oh ◽  
June-O Song ◽  
Tae-Yeon Seong ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Electron Concentration ◽  
High Electron ◽  
Dopant Activation ◽  
High Electron Concentration

Impact of rapid thermal annealing and hydrogenation on the doping concentration and carrier mobility in solid phase crystallized poly-Si thin films

2011 ◽  
Vol 1321 ◽  
Author(s):  
A. Kumar ◽  
P.I. Widenborg ◽  
H. Hidayat ◽  
Qiu Zixuan ◽  
A.G. Aberle
Keyword(s):  
Thin Films ◽  
Electronic Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Carrier Mobility ◽  
Crystalline Silicon ◽  
Solid Phase ◽  
Dopant Activation ◽  
Hall Effect Measurements ◽  
Probe Measurements

ABSTRACTThe effect of the rapid thermal annealing (RTA) and hydrogenation step on the electronic properties of the n+ and p+ solid phase crystallized (SPC) poly-crystalline silicon (poly-Si) thin films was investigated using Hall effect measurements and four-point-probe measurements. Both the RTA and hydrogenation step were found to affect the electronic properties of doped poly-Si thin films. The RTA step was found to have the largest impact on the dopant activation and majority carrier mobility of the p+ SPC poly-Si thin films. A very high Hall mobility of 71 cm2/Vs for n+ poly-Si and 35 cm2/Vs for p+ poly-Si at the carrier concentration of 2×1019 cm-3 and 4.5×1019 cm-3, respectively, were obtained.

Terahertz conductivity of ultra high electron concentration 2DEGs in NTO/STO heterostructures

2016 ◽  
Author(s):  
Sara Arezoomandan ◽  
Hugo O. Condori Quispe ◽  
Ashish Chanana ◽  
Peng Xu ◽  
Ajay Nahata ◽  
...  
Keyword(s):  
Electron Concentration ◽  
High Electron ◽  
High Electron Concentration ◽  
Terahertz Conductivity

Low Temperature Dopant Activation Using Variable Frequency Microwave Annealing

2010 ◽  
Vol 1245 ◽  
Author(s):  
Terry L. Alford ◽  
Karthik Sivaramakrishnan ◽  
Anil Indluru ◽  
Iftikhar Ahmad ◽  
Bob Hubbard ◽  
...  
Keyword(s):  
Low Temperature ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Effective Means ◽  
Variable Frequency ◽  
Dopant Activation ◽  
Ion Channeling ◽  
Transmission Electron ◽  
Limited Diffusion ◽  
Ion Implanted

AbstractVariable frequency microwaves (VFM) and rapid thermal annealing (RTA) were used to activate ion implanted dopants and re-grow implant-damaged silicon. Four-point-probe measurements were used to determine the extent of dopant activation and revealed comparable resistivities for 30 seconds of RTA annealing at 900 °C and 6-9 minutes of VFM annealing at 540 °C. Ion channeling analysis spectra revealed that microwave heating removes the Si damage that results from arsenic ion implantation to an extent comparable to RTA. Cross-section transmission electron microscopy demonstrates that the silicon lattice regains nearly all of its crystallinity after microwave processing of arsenic implanted silicon. Secondary ion mass spectroscopy reveals limited diffusion of dopants in VFM processed samples when compared to rapid thermal annealing. Our results establish that VFM is an effective means of low-temperature dopant activation in ion-implanted Si.

Rapid Thermal Annealing of Ion Implanted p-n Junction in Silicon

1985 ◽  
Vol 52 ◽  
Author(s):  
C. Ho ◽  
R. Kwor ◽  
C. Araujo ◽  
J. Gelpey
Keyword(s):  
Leakage Current ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Dwell Time ◽  
Annealing Temperature ◽  
Current Analysis ◽  
Junction Depth ◽  
Leakage Currents ◽  
Dopant Activation ◽  
Secondary Ion

ABSTRACTThe rapid thermal annealing (RTA) of p+n and n+p diodes, fabricated by the LOCOS process, and its subsequent effects on junction leakage current, junction depth and dopant activation were investigated. The reverse bias diode leakage currents of implanted Si <100> samples (As+: 60 KeY, 5×1014 5×1015 cm−2, B+: 25 KeV, l×1014, l×1015 cm−2 and BF2+: 45 KeV, 1×1015cm−2 ) were measured as functions of annealing temperature, and dwell time. The annealing was performed using an Eaton RTA system (Nova ROA-400) at temperatures ranging from 950 °C to 1150 °C. Annealing times ranged from 0.2 sec. to 10 sec. The results from the diode leakage current analysis are correlated with those from Secondary Ion Mass Spectroscopy (SIMS) and differential Hall measurements. The reverse-biased leakage currents from the RTA-treated samples are compared with those from furnace-annealed samples.

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