Publisher's Note: “AlGaN based deep ultraviolet light emitting diodes with high internal quantum efficiency grown by molecular beam epitaxy” [Appl. Phys. Lett. 98, 081110 (2011)]
2010 ◽
Vol 4
(1-2)
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pp. 49-51
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2014 ◽
Vol 395
◽
pp. 9-13
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2019 ◽
Vol 507
◽
pp. 65-69
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2015 ◽
Vol 425
◽
pp. 389-392
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