Shifted x‐ray photoelectron peak in molecular beam epitaxial GaAs grown at 200 °C

1992 ◽  
Vol 61 (11) ◽  
pp. 1329-1331 ◽  
Author(s):  
D. C. Look ◽  
J. T. Grant ◽  
J. R. Sizelove
Keyword(s):  
Molecular Beam ◽  
X Ray ◽  
Epitaxial Gaas ◽  
Molecular Beam Epitaxial ◽  
Photoelectron Peak

Fermi level pinning in low‐temperature molecular beam epitaxial GaAs

1992 ◽  
Vol 61 (13) ◽  
pp. 1585-1587 ◽  
Author(s):  
H. Shen ◽  
F. C. Rong ◽  
R. Lux ◽  
J. Pamulapati ◽  
M. Taysing‐Lara ◽  
...  
Keyword(s):  
Low Temperature ◽  
Fermi Level ◽  
Molecular Beam ◽  
Epitaxial Gaas ◽  
Fermi Level Pinning ◽  
Molecular Beam Epitaxial

scholarly journals Electrical characterization of molecular beam epitaxial GaAs with peak electron mobilities up to ≊4×105cm2 V−1 s−1

1991 ◽  
Vol 58 (5) ◽  
pp. 478-480 ◽  
Author(s):  
C. R. Stanley ◽  
M. C. Holland ◽  
A. H. Kean ◽  
M. B. Stanaway ◽  
R. T. Grimes ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Electrical Characterization ◽  
Epitaxial Gaas ◽  
Molecular Beam Epitaxial

Photoluminescence characterization of molecular beam epitaxial GaAs grown using cracked AsH3

1984 ◽  
Vol 44 (2) ◽  
pp. 240-242 ◽  
Author(s):  
B. J. Skromme ◽  
G. E. Stillman ◽  
A. R. Calawa ◽  
G. M. Metze
Keyword(s):  
Molecular Beam ◽  
Epitaxial Gaas ◽  
Molecular Beam Epitaxial

Growth‐induced shallow acceptor defect and related luminescence effects in molecular beam epitaxial GaAs

1990 ◽  
Vol 68 (2) ◽  
pp. 741-754 ◽  
Author(s):  
I. Szafranek ◽  
M. A. Plano ◽  
M. J. McCollum ◽  
S. A. Stockman ◽  
S. L. Jackson ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Shallow Acceptor ◽  
Epitaxial Gaas ◽  
Molecular Beam Epitaxial ◽  
Acceptor Defect

Molecular Beam Epitaxial Growth of Nonpolar a-plane InN/ GaN Heterostructures

2012 ◽  
Vol 1396 ◽  
Author(s):  
Mohana K. Rajpalke ◽  
Thirumaleshwara N. Bhat ◽  
Basanta Roul ◽  
Mahesh Kumar ◽  
S. B. Krupanidhi
Keyword(s):  
Schottky Barrier ◽  
Molecular Beam ◽  
Schottky Barrier Height ◽  
High Energy ◽  
Scanning Electron Micrographs ◽  
X Ray Diffraction ◽  
X Ray ◽  
Molecular Beam Epitaxial ◽  
Diffraction Patterns ◽  
Molecular Beam Epitaxial Growth

ABSTRACTNonpolar a-plane InN/GaN heterostructures were grown by plasma assisted molecular beam epitaxy. The growth of nonpolar a- plane InN / GaN heterostructures were confirmed by high resolution x-ray diffraction study. Reflection high energy electron diffraction patterns show the reasonably smooth surface of a-plane GaN and island-like growth for nonpolar a-plane InN film, which is further confirmed by scanning electron micrographs. An absorption edge in the optical spectra has the energy of 0.74 eV, showing blueshifts from the fundamental band gap of 0.7 eV. The rectifying behavior of the I-V curve indicates the existence of Schottky barrier at the InN and GaN interface. The Schottky barrier height (φb) and the ideality factor (η) for the InN/GaN heterostructures found to be 0.58 eV and 2.05 respectively.

Growth-parameter dependence of deep levels in molecular-beam-epitaxial GaAs

1980 ◽  
Vol 16 (5) ◽  
pp. 171 ◽  
Author(s):  
R.A. Stall ◽  
C.E.C. Wood ◽  
P.D. Kirchner ◽  
L.F. Eastman
Keyword(s):  
Molecular Beam ◽  
Growth Parameter ◽  
Deep Levels ◽  
Parameter Dependence ◽  
Epitaxial Gaas ◽  
Molecular Beam Epitaxial
Sign in / Sign up

Export Citation Format

Share Document