Multistable floating body potentials: The cause of hysteresis in silicon‐on‐insulator metal‐oxide‐semiconductor transistors

Patrick S. Liu; G. P. Li

doi:10.1063/1.107183

Multistable floating body potentials: The cause of hysteresis in silicon‐on‐insulator metal‐oxide‐semiconductor transistors

Applied Physics Letters ◽

10.1063/1.107183 ◽

1992 ◽

Vol 60 (15) ◽

pp. 1845-1847 ◽

Cited By ~ 3

Author(s):

Patrick S. Liu ◽

G. P. Li

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Floating Body

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A New Structure of Silicon-on-Insulator Metal-Oxide-Semiconductor Field Effect Transistor to Suppress the Floating Body Effect

Chinese Physics Letters ◽

10.1088/0256-307x/20/5/350 ◽

2003 ◽

Vol 20 (5) ◽

pp. 767-769 ◽

Cited By ~ 8

Author(s):

Zhu Ming ◽

Lin Qing ◽

Zhang Zheng-Xuan ◽

Lin Cheng-Lu

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Floating Body ◽

Body Effect ◽

Floating Body Effect ◽

Effect Transistor

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Investigation of floating body effects in silicon‐on‐insulator metal‐oxide‐semiconductor field‐effect transistors

Journal of Applied Physics ◽

10.1063/1.349200 ◽

1991 ◽

Vol 70 (7) ◽

pp. 3912-3919 ◽

Cited By ~ 18

Author(s):

T. Ouisse ◽

G. Ghibaudo ◽

J. Brini ◽

S. Cristoloveanu ◽

G. Borel

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Floating Body ◽

Floating Body Effects

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Impact of strain on gate-induced floating body effect for partially depleted silicon-on-insulator p-type metal–oxide–semiconductor-field-effect-transistors

Thin Solid Films ◽

10.1016/j.tsf.2012.09.087 ◽

2013 ◽

Vol 528 ◽

pp. 10-18

Author(s):

Wen-Hung Lo ◽

Ting-Chang Chang ◽

Chih-Hao Dai ◽

Wan-Lin Chung ◽

Ching-En Chen ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Floating Body ◽

Body Effect ◽

Floating Body Effect ◽

P Type

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Body current scanning: A novel technique for characterizing the floating body effects and parasitic bipolar action in silicon‐on‐insulator metal‐oxide‐semiconductor transistors

Applied Physics Letters ◽

10.1063/1.105279 ◽

1991 ◽

Vol 59 (12) ◽

pp. 1435-1437 ◽

Cited By ~ 5

Author(s):

Patrick S. Liu ◽

G. P. Li

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Floating Body ◽

Novel Technique ◽

Floating Body Effects

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Suppression of Floating Body Effects by Controlling Potential Profile in the Lower Body Region of Silicon-on-Insulator Metal-Oxide-Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.39.3271 ◽

2000 ◽

Vol 39 (Part 1, No. 6A) ◽

pp. 3271-3276

Author(s):

Yasuhiro Sato ◽

Toshiaki Tsuchiya

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Potential Profile ◽

Oxide Semiconductor ◽

Floating Body ◽

Body Region ◽

Lower Body

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Investigation of piezoresistive effect in p-channel metal–oxide–semiconductor field-effect transistors fabricated on circular silicon-on-insulator diaphragms using cost-effective minimal-fab process

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.06hd03 ◽

2018 ◽

Vol 57 (6S1) ◽

pp. 06HD03 ◽

Cited By ~ 3

Author(s):

Yongxun Liu ◽

Hiroyuki Tanaka ◽

Norio Umeyama ◽

Kazuhiro Koga ◽

Sommawan Khumpuang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Cost Effective ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Piezoresistive Effect

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Self-consistent calculations of inversion-layer mobility in highly doped silicon-on-insulator metal–oxide–semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1378329 ◽

2001 ◽

Vol 90 (2) ◽

pp. 866-870 ◽

Cited By ~ 6

Author(s):

Hideyuki Iwata

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Inversion Layer ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Self Consistent ◽

Doped Silicon

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Metal–oxide–semiconductor-compatible silicon based single electron transistor using bonded and etched back silicon on insulator material

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.589739 ◽

1997 ◽

Vol 15 (6) ◽

pp. 2836 ◽

Cited By ~ 5

Author(s):

T. Köster

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Single Electron ◽

Oxide Semiconductor ◽

Single Electron Transistor ◽

Silicon Based

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A highly sensitive broadband planar metal-oxide-semiconductor photo detector fabricated on a silicon-on-insulator substrate

Journal of Applied Physics ◽

10.1063/1.4893582 ◽

2014 ◽

Vol 116 (7) ◽

pp. 074513 ◽

Cited By ~ 12

Author(s):

V. Mikhelashvili ◽

D. Cristea ◽

B. Meyler ◽

S. Yofis ◽

Y. Shneider ◽

...

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Highly Sensitive ◽

Insulator Substrate

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Comparisons of Radio-Frequency Performance of Quasi-Silicon-on-Insulator and Conventional Silicon-on-Insulator Power Metal–Oxide–Semiconductor Field-Effect-Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.7635 ◽

2007 ◽

Vol 46 (12) ◽

pp. 7635-7638 ◽

Cited By ~ 2

Author(s):

Yasushi Hiraoka ◽

Satoshi Matsumoto

Keyword(s):

Metal Oxide ◽

Radio Frequency ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor

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