Investigation of floating body effects in silicon‐on‐insulator metal‐oxide‐semiconductor field‐effect transistors

T. Ouisse; G. Ghibaudo; J. Brini; S. Cristoloveanu; G. Borel

doi:10.1063/1.349200

Investigation of floating body effects in silicon‐on‐insulator metal‐oxide‐semiconductor field‐effect transistors

Journal of Applied Physics ◽

10.1063/1.349200 ◽

1991 ◽

Vol 70 (7) ◽

pp. 3912-3919 ◽

Cited By ~ 18

Author(s):

T. Ouisse ◽

G. Ghibaudo ◽

J. Brini ◽

S. Cristoloveanu ◽

G. Borel

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Floating Body ◽

Floating Body Effects

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Impact of strain on gate-induced floating body effect for partially depleted silicon-on-insulator p-type metal–oxide–semiconductor-field-effect-transistors

Thin Solid Films ◽

10.1016/j.tsf.2012.09.087 ◽

2013 ◽

Vol 528 ◽

pp. 10-18

Author(s):

Wen-Hung Lo ◽

Ting-Chang Chang ◽

Chih-Hao Dai ◽

Wan-Lin Chung ◽

Ching-En Chen ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Floating Body ◽

Body Effect ◽

Floating Body Effect ◽

P Type

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Suppression of Floating Body Effects by Controlling Potential Profile in the Lower Body Region of Silicon-on-Insulator Metal-Oxide-Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.39.3271 ◽

2000 ◽

Vol 39 (Part 1, No. 6A) ◽

pp. 3271-3276

Author(s):

Yasuhiro Sato ◽

Toshiaki Tsuchiya

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Potential Profile ◽

Oxide Semiconductor ◽

Floating Body ◽

Body Region ◽

Lower Body

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Investigation of piezoresistive effect in p-channel metal–oxide–semiconductor field-effect transistors fabricated on circular silicon-on-insulator diaphragms using cost-effective minimal-fab process

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.06hd03 ◽

2018 ◽

Vol 57 (6S1) ◽

pp. 06HD03 ◽

Cited By ~ 3

Author(s):

Yongxun Liu ◽

Hiroyuki Tanaka ◽

Norio Umeyama ◽

Kazuhiro Koga ◽

Sommawan Khumpuang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Cost Effective ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Piezoresistive Effect

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Self-consistent calculations of inversion-layer mobility in highly doped silicon-on-insulator metal–oxide–semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1378329 ◽

2001 ◽

Vol 90 (2) ◽

pp. 866-870 ◽

Cited By ~ 6

Author(s):

Hideyuki Iwata

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Inversion Layer ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Self Consistent ◽

Doped Silicon

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Comparisons of Radio-Frequency Performance of Quasi-Silicon-on-Insulator and Conventional Silicon-on-Insulator Power Metal–Oxide–Semiconductor Field-Effect-Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.7635 ◽

2007 ◽

Vol 46 (12) ◽

pp. 7635-7638 ◽

Cited By ~ 2

Author(s):

Yasushi Hiraoka ◽

Satoshi Matsumoto

Keyword(s):

Metal Oxide ◽

Radio Frequency ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor

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A New Structure of Silicon-on-Insulator Metal-Oxide-Semiconductor Field Effect Transistor to Suppress the Floating Body Effect

Chinese Physics Letters ◽

10.1088/0256-307x/20/5/350 ◽

2003 ◽

Vol 20 (5) ◽

pp. 767-769 ◽

Cited By ~ 8

Author(s):

Zhu Ming ◽

Lin Qing ◽

Zhang Zheng-Xuan ◽

Lin Cheng-Lu

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Floating Body ◽

Body Effect ◽

Floating Body Effect ◽

Effect Transistor

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Self-Aligned Asymmetric Metal–Oxide–Semiconductor Field Effect Transistors Fabricated on Silicon-on-Insulator

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.091201 ◽

2009 ◽

Vol 48 (9) ◽

pp. 091201

Author(s):

Jong Pil Kim ◽

Jae Young Song ◽

Sang Wan Kim ◽

Jae Hyun Park ◽

Woo Young Choi ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor

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Modeling the performance of short-channel fully depleted silicon-on-insulator (SOI) metal oxide semiconductor field effect transistors (MOSFETs)

Silicon-On-Insulator (SOI) Technology ◽

10.1533/9780857099259.1.77 ◽

2014 ◽

pp. 77-101

Author(s):

S. Ghosh

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Short Channel ◽

Fully Depleted

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The low leakage current in floating body GaN metal oxide semiconductor field effect transistors

Solid-State Electronics ◽

10.1016/j.sse.2010.07.005 ◽

2010 ◽

Vol 54 (12) ◽

pp. 1561-1565

Author(s):

Tatsuya Fujishima ◽

Hirotaka Otake ◽

Yasushi Nanishi ◽

Hiroaki Ohta

Keyword(s):

Metal Oxide ◽

Leakage Current ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Floating Body ◽

Low Leakage ◽

Low Leakage Current

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Investigation of Mobility Enhancement Effect in Process-Induced Strained Ultrathin Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.2124 ◽

2008 ◽

Vol 47 (4) ◽

pp. 2124-2126 ◽

Cited By ~ 1

Author(s):

Akiko Ohata ◽

Claire Gallon ◽

Claire Fenouillet-Beranger ◽

Sorin Cristoloveanu

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Enhancement Effect

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