Temperature dependence of current-voltage characteristics of npn-type GaN∕InGaN double heterojunction bipolar transistors

2007 ◽  
Vol 91 (13) ◽  
pp. 133514 ◽  
Author(s):  
Atsushi Nishikawa ◽  
Kazuhide Kumakura ◽  
Toshiki Makimoto
Keyword(s):  
Temperature Dependence ◽  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Current Voltage ◽  
Double Heterojunction ◽  
Current Voltage Characteristics

Improved Current Gain in GaN/SiC Heterojunction Bipolar Transistors by Insertion of Ultra-Thin AlN Layer at Emitter-Junction

2009 ◽  
Vol 615-617 ◽  
pp. 979-982 ◽  
Author(s):  
Hiroki Miyake ◽  
Tsunenobu Kimoto ◽  
Jun Suda
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Current Gain ◽  
Carrier Injection ◽  
Voltage Measurement ◽  
Injection Efficiency ◽  
Conduction Band Offset ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Emitter Junction

GaN/SiC Heterojunction Bipolar Transistors (HBTs) with ultra-thin AlN insertion layers at the n-GaN/p-SiC emitter junction are proposed to improve carrier injection efficiency. The current-voltage characteristics of n-GaN/AlN/p-SiC heterojunctions have exhibited very small reverse leakage and good rectification. The capacitance-voltage measurement have revealed that the conduction band offset between n-GaN and p-SiC has been reduced from -0.74 eV to -0.54 eV by insertion of AlN, indicating that the GaN/AlN/SiC heterojunction may show better electron-injection efficiency. A significantly improved common-base current gain (α~0.2) is obtained for GaN/AlN/SiC HBTs with initial N* pre-irradiation, while it was very low (α~0.001) for GaN/SiC HBTs without AlN layers.

17 Gbit/s pin-PD/decision circuit using InP/InGaAs double-heterojunction bipolar transistors

1996 ◽  
Vol 32 (4) ◽  
pp. 393 ◽  
Author(s):  
M. Yoneyama ◽  
E. Sano ◽  
S. Yamahata ◽  
Y. Matsuoka ◽  
M. Yaita
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Double Heterojunction ◽  
Decision Circuit
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