Analysis of the temperature dependence of current gain in heterojunction bipolar transistors

1997 ◽  
Vol 44 (1) ◽  
pp. 17-24 ◽  
Author(s):  
C.-M.S. Ng ◽  
P.A. Houston ◽  
Ho-Kwang Yow
Keyword(s):  
Temperature Dependence ◽  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Current Gain

Temperature dependence of current gain in AlGaAs/GaAs heterojunction bipolar transistors

1984 ◽  
Vol 45 (10) ◽  
pp. 1086-1088 ◽  
Author(s):  
Naresh Chand ◽  
Russ Fischer ◽  
Tim Henderson ◽  
John Klem ◽  
William Kopp ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Current Gain

Temperature dependence of current gain of InGaP/InGaAsN/GaAs heterojunction bipolar transistors

2004 ◽  
Vol 201 (9) ◽  
pp. 2190-2193 ◽  
Author(s):  
W. B. Tang ◽  
H. T. Hsu ◽  
C. C. Fan ◽  
C. H. Wang ◽  
N. Y. Li ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Current Gain

Current gain increase in AlGaAs/GaAs heterojunction bipolar transistors using AlGaAs layer overgrowth

1994 ◽  
Vol 65 (11) ◽  
pp. 1403-1405 ◽  
Author(s):  
S. R. D. Kalingamudali ◽  
A. C. Wismayer ◽  
R. C. Woods ◽  
J. S. Roberts
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Current Gain ◽  
Algaas Layer

Prevention of InP/InGaAs/InP Double Heterojunction Bipolar Transistors from Current Gain Reduction during Passivation

2004 ◽  
Vol 833 ◽  
Author(s):  
Byoung-Gue Min ◽  
Jong-Min Lee ◽  
Seong-Il Kim ◽  
Chul-Won Ju ◽  
Kyung-Ho Lee
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Silicon Oxide ◽  
Surface Recombination ◽  
Surface States ◽  
Bipolar Transistors ◽  
Base Layer ◽  
Current Gain ◽  
Device Structure ◽  
Double Heterojunction ◽  
Gain Reduction

ABSTRACTA significant degradation of current gain of InP/InGaAs/InP double heterojunction bipolar transistors was observed after passivation. The amount of degradation depended on the degree of surface exposure of the p-type InGaAs base layer according to the epi-structure and device structure. The deposition conditions such as deposition temperature, kinds of materials (silicon oxide, silicon nitride and aluminum oxide) and film thickness were not major variables to affect the device performance. The gain reduction was prevented by the BOE treatment before the passivation. A possible explanation of this behavior is that unstable non-stoichiometric surface states produced by excess In, Ga, or As after mesa etching are eliminated by BOE treatment and reduce the surface recombination sites.

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