Electrically detected magnetic resonance of a transition metal related recombination center in Sip–ndiodes

1992 ◽  
Vol 60 (5) ◽  
pp. 610-612 ◽  
Author(s):  
F. C. Rong ◽  
G. J. Gerardi ◽  
W. R. Buchwald ◽  
E. H. Poindexter ◽  
M. T. Umlor ◽  
...  
2014 ◽  
Vol 778-780 ◽  
pp. 414-417 ◽  
Author(s):  
Takahide Umeda ◽  
Mitsuo Okamoto ◽  
Ryo Arai ◽  
Yoshihiro Satoh ◽  
Ryouji Kosugi ◽  
...  

This paper reports an EDMR (electrically detected magnetic resonance) observation on 4H-SiC(000-1) “C face” MOSFETs. We found a new strong EDMR signal in wet-oxidized C-face 4H-SiC MOSFETs, which originates from intrinsic interface defects on C-face SiC-SiO2 structures.


1998 ◽  
Vol 58 (8) ◽  
pp. 4892-4902 ◽  
Author(s):  
T. Wimbauer ◽  
M. S. Brandt ◽  
M. W. Bayerl ◽  
N. M. Reinacher ◽  
M. Stutzmann ◽  
...  

2011 ◽  
Vol 3 (4) ◽  
pp. 568-574 ◽  
Author(s):  
M. Fanciulli ◽  
A. Vellei ◽  
C. Canevali ◽  
S. Baldovino ◽  
G. Pennelli ◽  
...  

ChemInform ◽  
2012 ◽  
Vol 43 (11) ◽  
pp. no-no
Author(s):  
P. M. Lenahan ◽  
C. J. Cochrane ◽  
J. P. Campbell ◽  
J. T. Ryan

1999 ◽  
Vol 101 (1-3) ◽  
pp. 805-806 ◽  
Author(s):  
C.F.O, Graeff ◽  
C.A. Brunello ◽  
R.M. Faria

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