Physical nature of electrically detected magnetic resonance through spin dependent trap assisted tunneling in insulators

2018 ◽  
Vol 124 (21) ◽  
pp. 215105 ◽  
Author(s):  
M. A. Anders ◽  
P. M. Lenahan ◽  
C. J. Cochrane ◽  
Johan van Tol
2014 ◽  
Vol 778-780 ◽  
pp. 414-417 ◽  
Author(s):  
Takahide Umeda ◽  
Mitsuo Okamoto ◽  
Ryo Arai ◽  
Yoshihiro Satoh ◽  
Ryouji Kosugi ◽  
...  

This paper reports an EDMR (electrically detected magnetic resonance) observation on 4H-SiC(000-1) “C face” MOSFETs. We found a new strong EDMR signal in wet-oxidized C-face 4H-SiC MOSFETs, which originates from intrinsic interface defects on C-face SiC-SiO2 structures.


2011 ◽  
Vol 20 (03) ◽  
pp. 557-564
Author(s):  
G. R. SAVICH ◽  
J. R. PEDRAZZANI ◽  
S. MAIMON ◽  
G. W. WICKS

Tunneling currents and surface leakage currents are both contributors to the overall dark current which limits many semiconductor devices. Surface leakage current is generally controlled by applying a post-epitaxial passivation layer; however, surface passivation is often expensive and ineffective. Band-to-band and trap assisted tunneling currents cannot be controlled through surface passivants, thus an alternative means of control is necessary. Unipolar barriers, when appropriately applied to standard electronic device structures, can reduce the effects of both surface leakage and tunneling currents more easily and cost effectively than other methods, including surface passivation. Unipolar barriers are applied to the p -type region of a conventional, MBE grown, InAs based pn junction structures resulting in a reduction of surface leakage current. Placing the unipolar barrier in the n -type region of the device, has the added benefit of reducing trap assisted tunneling current as well as surface leakage currents. Conventional, InAs pn junctions are shown to exhibit surface leakage current while unipolar barrier photodiodes show no detectable surface currents.


1998 ◽  
Vol 58 (8) ◽  
pp. 4892-4902 ◽  
Author(s):  
T. Wimbauer ◽  
M. S. Brandt ◽  
M. W. Bayerl ◽  
N. M. Reinacher ◽  
M. Stutzmann ◽  
...  

1983 ◽  
Vol 79 (1) ◽  
pp. 223-236 ◽  
Author(s):  
F. Campabadal ◽  
V. Milian ◽  
X. Aymerich-Humet

2011 ◽  
Vol 3 (4) ◽  
pp. 568-574 ◽  
Author(s):  
M. Fanciulli ◽  
A. Vellei ◽  
C. Canevali ◽  
S. Baldovino ◽  
G. Pennelli ◽  
...  

AIP Advances ◽  
2017 ◽  
Vol 7 (6) ◽  
pp. 065016 ◽  
Author(s):  
Z. G. Shao ◽  
Q. J. Gu ◽  
X. F. Yang ◽  
J. Zhang ◽  
Y. W. Kuang ◽  
...  

ChemInform ◽  
2012 ◽  
Vol 43 (11) ◽  
pp. no-no
Author(s):  
P. M. Lenahan ◽  
C. J. Cochrane ◽  
J. P. Campbell ◽  
J. T. Ryan

1999 ◽  
Vol 101 (1-3) ◽  
pp. 805-806 ◽  
Author(s):  
C.F.O, Graeff ◽  
C.A. Brunello ◽  
R.M. Faria

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