Detailed investigation of a nonradiative recombination center in Si by electrically detected magnetic resonance

1995 ◽  
Vol 77 (10) ◽  
pp. 5201-5207 ◽  
Author(s):  
Z. Xiong ◽  
D. J. Miller
Keyword(s):  
Magnetic Resonance ◽  
Recombination Center ◽  
Nonradiative Recombination ◽  
Nonradiative Recombination Center ◽  
Electrically Detected Magnetic Resonance

1.54μm luminescence of β-FeSi2 grown on Au-coated Si substrates

2012 ◽  
Vol 1396 ◽  
Author(s):  
Kensuke Akiyama ◽  
Hiroshi Funakubo ◽  
Masaru Itakura
Keyword(s):  
Temperature Dependence ◽  
Radiative Recombination ◽  
Recombination Center ◽  
Quality Level ◽  
Nonradiative Recombination ◽  
Si Substrate ◽  
High Quality ◽  
Nonradiative Recombination Center ◽  
Si Substrates ◽  
Photoluminescence Peak

ABSTRACTA clear PL spectrum was observed from β-FeSi2 grains on gold (Au)-coated (100)Si substrates, and indicated the formation of crystal with the same high quality level as the β-FeSi2 on a copper (Cu)-coated Si substrate. Moreover, the temperature dependence of photoluminescence peak intensities showed lower density of the nonradiative recombination center in β-FeSi2 grains on Au-coated Si substrates than that of β-FeSi2 film on Cu-coated Si. Au was not detected in β-FeSi2 grains by STEM-EDX observation, while Cu was observed in the grains and grain boundaries of β-FeSi2 and rolled as non-radiative recombination center.

Electrically detected magnetic resonance of a transition metal related recombination center in Sip–ndiodes

1992 ◽  
Vol 60 (5) ◽  
pp. 610-612 ◽  
Author(s):  
F. C. Rong ◽  
G. J. Gerardi ◽  
W. R. Buchwald ◽  
E. H. Poindexter ◽  
M. T. Umlor ◽  
...  
Keyword(s):  
Magnetic Resonance ◽  
Transition Metal ◽  
Recombination Center ◽  
Electrically Detected Magnetic Resonance

Magnetic Resonance Studies of GaN-Based Single- Quantum Well LEDs

1996 ◽  
Vol 449 ◽  
Author(s):  
W. E. Carlos ◽  
E. R. Glaser ◽  
T. A. Kennedy ◽  
Shuji Nakamura
Keyword(s):  
Magnetic Resonance ◽  
Quantum Well ◽  
Depletion Region ◽  
Nonradiative Recombination ◽  
Single Quantum ◽  
Single Quantum Well ◽  
At Resonance ◽  
Dominant Feature ◽  
Electrically Detected Magnetic Resonance ◽  
Deep Donor

ABSTRACTWe report electrically-detected magnetic resonance (EDMR) and electroluminescence-detected magnetic resonance (ELDMR) results on InGaN/AJGaN single-quantum-well light emitting diodes. The dominant feature detected by either technique is a broad resonance (ΔB ≈ 13 mT) at g ≈ 2.01 which is enhanced by high current stressing. Our ELDMR measurements show that, depending on bias, this defect is predominately associated with either an increase or a decrease in electroluminescence at resonance while our EDMR measurements show that this resonance is associated with an increase in current at resonance before stressing and a decrease after stressing. We suggest that this is associated with a nonradiative recombination path, in parallel with the radiative recombination path and with recombination in the depletion region of a contact. A second resonance, more prominent before stressing, with g ≈ 1.99 and ΔB ∽ 7 mT is very similar to the deep donor trap, previously observed in double heterostructure diodes and is associated with a decrease in both the current and electroluminescence at resonance.

Calcium as a nonradiative recombination center in InGaN

2017 ◽  
Vol 10 (2) ◽  
pp. 021001 ◽  
Author(s):  
Jimmy-Xuan Shen ◽  
Darshana Wickramaratne ◽  
Cyrus E. Dreyer ◽  
Audrius Alkauskas ◽  
Erin Young ◽  
...  
Keyword(s):  
Recombination Center ◽  
Nonradiative Recombination ◽  
Nonradiative Recombination Center

Identification of a nonradiative recombination center in GaAs

1992 ◽  
Vol 72 (9) ◽  
pp. 4449-4451 ◽  
Author(s):  
P. Michler ◽  
A. Hangleiter ◽  
R. Dieter ◽  
F. Scholz
Keyword(s):  
Recombination Center ◽  
Nonradiative Recombination ◽  
Nonradiative Recombination Center

C-Face Interface Defects in 4H-SiC MOSFETs Studied by Electrically Detected Magnetic Resonance

2014 ◽  
Vol 778-780 ◽  
pp. 414-417 ◽  
Author(s):  
Takahide Umeda ◽  
Mitsuo Okamoto ◽  
Ryo Arai ◽  
Yoshihiro Satoh ◽  
Ryouji Kosugi ◽  
...  
Keyword(s):  
Magnetic Resonance ◽  
Interface Defects ◽  
Electrically Detected Magnetic Resonance

This paper reports an EDMR (electrically detected magnetic resonance) observation on 4H-SiC(000-1) “C face” MOSFETs. We found a new strong EDMR signal in wet-oxidized C-face 4H-SiC MOSFETs, which originates from intrinsic interface defects on C-face SiC-SiO2 structures.

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