Remarkable reduction of threshold current density by substrate misorientation effects in 660 nm visible light lasers with GaInP bulk active layers

Akihiko Kikuchi; Katsumi Kishino

doi:10.1063/1.106439

Remarkable reduction of threshold current density by substrate misorientation effects in 660 nm visible light lasers with GaInP bulk active layers

Applied Physics Letters ◽

10.1063/1.106439 ◽

1992 ◽

Vol 60 (9) ◽

pp. 1046-1048 ◽

Cited By ~ 15

Author(s):

Akihiko Kikuchi ◽

Katsumi Kishino

Keyword(s):

Visible Light ◽

Current Density ◽

Threshold Current ◽

Threshold Current Density ◽

Active Layers ◽

Remarkable Reduction

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Remarkable reduction of threshold current density of 670 nm GaInAsP/AlGaAs visible lasers by increasing al content of AlGaAs cladding layers

Electronics Letters ◽

10.1049/el:19890514 ◽

1989 ◽

Vol 25 (12) ◽

pp. 761 ◽

Cited By ~ 4

Author(s):

T.-H. Chong ◽

K. Kishino

Keyword(s):

Current Density ◽

Threshold Current ◽

Threshold Current Density ◽

Al Content ◽

Visible Lasers ◽

Cladding Layers ◽

Remarkable Reduction

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Visible AlGaAs single quantum well lasers with low threshold current density grown by molecular beam epitaxy

Electronics Letters ◽

10.1049/el:19880364 ◽

1988 ◽

Vol 24 (9) ◽

pp. 537

Author(s):

B. Saint-Cricq ◽

F. Chatenoud ◽

F. Lozes-Dupuy ◽

S. Fourtine ◽

H. Martinot

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Current Density ◽

Molecular Beam ◽

Threshold Current ◽

Threshold Current Density ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well ◽

Low Threshold

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Investigation of the temperature dependence of the threshold current density of GaInP/AlGaInP double‐heterostructure lasers

Applied Physics Letters ◽

10.1063/1.103891 ◽

1990 ◽

Vol 57 (22) ◽

pp. 2291-2293 ◽

Cited By ~ 18

Author(s):

S. H. Hagen ◽

A. Valster ◽

M. J. B. Boermans ◽

J. van der Heyden

Keyword(s):

Temperature Dependence ◽

Current Density ◽

Threshold Current ◽

Threshold Current Density ◽

Double Heterostructure

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Low Threshold Current Density (100) GaInAsP/InP Double-Heterostructure Lasers for Wavelength 1.3 µm

Japanese Journal of Applied Physics ◽

10.1143/jjap.18.1795 ◽

1979 ◽

Vol 18 (9) ◽

pp. 1795-1805 ◽

Cited By ~ 44

Author(s):

Yoshio Itaya ◽

Yasuharu Suematsu ◽

Shinya Katayama ◽

Katsumi Kishino ◽

Shigehisa Arai

Keyword(s):

Current Density ◽

Threshold Current ◽

Threshold Current Density ◽

Double Heterostructure ◽

Low Threshold

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Observation of stripe‐direction dependence of threshold current density for AlGaInP laser diodes with CuPt‐type natural superlattice in Ga0.5In0.5P active layer

Applied Physics Letters ◽

10.1063/1.107782 ◽

1992 ◽

Vol 61 (7) ◽

pp. 737-739 ◽

Cited By ~ 25

Author(s):

H. Fujii ◽

Y. Ueno ◽

A. Gomyo ◽

K. Endo ◽

T. Suzuki

Keyword(s):

Active Layer ◽

Current Density ◽

Laser Diodes ◽

Threshold Current ◽

Threshold Current Density ◽

Natural Superlattice ◽

Direction Dependence

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Very low threshold current density SCH-MQW laser diodes emitting at 1.55[micro sign]m

Electronics Letters ◽

10.1049/el:19890738 ◽

1989 ◽

Vol 25 (16) ◽

pp. 1103 ◽

Cited By ~ 26

Author(s):

R.W. Glew ◽

B. Garrett ◽

P.D. Greene

Keyword(s):

Current Density ◽

Laser Diodes ◽

Threshold Current ◽

Threshold Current Density ◽

Low Threshold

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Low threshold current density 1.3 [micro sign]m InAs∕InGaAs quantum dot lasers with InGaP cladding layers grown by gas-source molecular-beam epitaxy

Electronics Letters ◽

10.1049/el:20040127 ◽

2004 ◽

Vol 40 (3) ◽

pp. 179 ◽

Cited By ~ 7

Author(s):

F.Y. Chang ◽

J.D. Lee ◽

H.H. Lin

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Dot ◽

Current Density ◽

Molecular Beam ◽

Threshold Current ◽

Threshold Current Density ◽

Quantum Dot Lasers ◽

Gas Source ◽

Low Threshold ◽

Cladding Layers

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Temperature dependence of the threshold current density in InP‐Ga0.28In0.72As0.6P0.4(λ=1.3 μm) double heterostructure lasers

Journal of Applied Physics ◽

10.1063/1.334226 ◽

1984 ◽

Vol 56 (7) ◽

pp. 1959-1964 ◽

Cited By ~ 34

Author(s):

H. C. Casey

Keyword(s):

Temperature Dependence ◽

Current Density ◽

Threshold Current ◽

Threshold Current Density ◽

Double Heterostructure

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Temperature dependence of threshold current density Jth and differential efficiency ηd of high‐power InGaAsP/GaAs (λ=0.8 μm) lasers

Applied Physics Letters ◽

10.1063/1.114193 ◽

1995 ◽

Vol 66 (3) ◽

pp. 253-255 ◽

Cited By ~ 14

Author(s):

H. J. Yi ◽

J. Diaz ◽

I. Eliashevich ◽

M. Stanton ◽

M. Erdtmann ◽

...

Keyword(s):

Temperature Dependence ◽

Current Density ◽

High Power ◽

Threshold Current ◽

Threshold Current Density ◽

Differential Efficiency

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Key issues associated with low threshold current density for InP-based quantum cascade lasers

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2006.11.266 ◽

2007 ◽

Vol 301-302 ◽

pp. 129-133 ◽

Cited By ~ 3

Author(s):

A.Z. Li ◽

H. Li ◽

G.Y. Xu ◽

Y.G. Zhang ◽

C. Lin ◽

...

Keyword(s):

Current Density ◽

Quantum Cascade Lasers ◽

Threshold Current ◽

Threshold Current Density ◽

Quantum Cascade ◽

Key Issues ◽

Low Threshold ◽

Cascade Lasers

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